Abstract: A first layer is formed over a substrate; a second layer is formed over the first layer; and a third layer is formed over the second layer. The first and third layers each have a first semiconductor element; the second layer has a second semiconductor element different from the first semiconductor element. The second layer has the second semiconductor element at a first concentration in a first region and at a second concentration in a second region of the second layer. A source/drain trench is formed in a region of the stack to expose side surfaces of the layers. A first portion of the second layer is removed from the exposed side surface to form a gap between the first and the third layers. A spacer is formed in the gap. A source/drain feature is formed in the source/drain trench and on a sidewall of the spacer.

Abstract: A method of fabricating a magnetic component structure with thermal conductive filler, including steps of providing a mold with a coil mounted therein, potting the mold with a thermal conductive material to form a thermal conductive filler encapsulating at least a portion of said coil, releasing the thermal conductive filler and the coil from the mold, and combining the thermal conductive filler with magnetic cores to form a magnetic component structure.

Abstract: An magnetic component structure with thermal conductive filler is provided in the present invention, including an upper magnetic core, a lower magnetic core combining with the upper magnetic core to form a casing with a front opening and a rear opening, and a coil mounted in the casing, where two terminals of the coil extend outwardly from the front opening, and a thermal conductive filler filling between the casing and the coil in the casing.

Abstract: An magnetic component structure with thermal conductive filler is provided in the present invention, including an upper magnetic core, a lower magnetic core combining with the upper magnetic core to form a casing with a front opening and a rear opening, and a coil mounted in the casing, where two terminals of the coil extend outwardly from the front opening, and a thermal conductive filler filling between the casing and the coil in the casing.

Abstract: A method of direct electrochemical oxidation is provided to modify carbon felts of a flow battery. Redox reactions are used for modification. Therein, voltage is directly conducted to the cell stack. The carbon felts of the cell stack are uniformly contacted with electrolytes for processing electrochemical reactions. As a result, modification is done to generate oxygen-containing functional groups (—COOH, —OH) on surfaces of the carbon felts. Thus, the present invention has the following advantages: Operation and procedure are easy and quick. Experimental parameters and conditions can be easily regulated and replaced without dismantling a device used for modification. The device used can withstand a wide range of voltage and current. Modification effect can be obtained with low cost yet without high-temperature treatments.

Abstract: A method is provided for producing electrodes of flow cell having high power density. A plurality of seeds are distributed on a surface of a conductive carbon material. The seeds are etched into nanoparticles to form carbon nanotube (CNT) electrodes. The present invention can be applied to vanadium redox flow cell with advantages of the CNT electrodes, such as conductivity, corrosion resistance, mechanical strength and specific and electrochemical surface area. Electrons are directly passed to the material through CNTs and then to an external electronic load for improving power density of flow cell, making a cell pack more compact and reducing energy consumption on charging and discharging without using noble metal material.

Abstract: A gas-reforming catalyst is modified to obtain stability in high temperature. The catalyst uses ?-Al2O3 as a carrier and is nano-porous. Hence, reaction surface is greatly broadened; and platinum contained inside does not become bigger after times of use. The catalyst does not deposit carbon and has long life. The stability of the catalyst can be still remained even at a temperature higher than 800° C.

Abstract: A method is provided for producing electrodes of flow cell having high power density. A plurality of seeds are distributed on a surface of a conductive carbon material. The seeds are etched into nanoparticles to form carbon nanotube (CNT) electrodes. The present invention can be applied to vanadium redox flow cell with advantages of the CNT electrodes, such as conductivity, corrosion resistance, mechanical strength and specific and electrochemical surface area. Electrons are directly passed to the material through CNTs and then to an external electronic load for improving power density of flow cell, making a cell pack more compact and reducing energy consumption on charging and discharging without using noble metal material.

Abstract: A honeycomb catalyst is fabricated. The catalyst is made of nano metal oxides. The catalyst is used for natural gas reforming. The present invention can be applied in related fields of fuel cells and fuel power systems. The catalyst thus fabricated can be mass-produced, obtain low resistance, enhance surface activity, reduce carbon deposition, improve product performance and prolong use life.

Abstract: A gas-reforming catalyst is modified to obtain stability in high temperature. The catalyst uses ?-Al2O3 as a carrier and is nano-porous. Hence, reaction surface is greatly broadened; and platinum contained inside does not become bigger after times of use. The catalyst does not deposit carbon and has long life. The stability of the catalyst can be still remained even at a temperature higher than 800° C.

Abstract: A method for determining the performance of an implanting apparatus comprises the steps of forming a dopant barrier layer on a substrate, forming a target layer on the dopant barrier layer, performing an implanting process by using the implanting apparatus to implant dopants into the target layer such that the target layer becomes conductive, measuring at least one electrical property of the target layer, and determining the performance of the implanting apparatus by taking the electrical property into consideration. In one embodiment of the present invention, the dopant barrier layer is silicon nitride layer, the target layer is a polysilicon layer, and the electrical property is the sheet resistance of the conductive polysilicon layer.

Abstract: The present invention provides a film antenna assembly and a fabrication method thereof. The assembly includes an antenna body, which is a conducting body placed onto the substrate. The antenna body is provided with a signal connector, a feeder, and a conducting medium. One side of the conducting medium is coupled with the feeder, and the other side is located on the signal connector of antenna body. With this combined structure of the feeder, the film antenna assembly could be protected against damage, and the stable electrical connection resolves the coupling issue of the film antenna and feeder for improved applicability and economic efficiency.

Abstract: A method for preparing a P-type polysilicon gate structure comprises the steps of forming a gate oxide layer on a substrate, forming an N-type polysilicon layer on the gate oxide layer, performing a first implanting process to convert the N-type polysilicon layer into a P-type polysilicon layer, performing a second implanting process to implant P-type dopants into a portion of the P-type polysilicon layer near the interface between the gate oxide layer and the P-type polysilicon layer, and performing a thermal treating process at a predetermined temperature for a predetermined period to complete the P-type polysilicon gate structure.

Abstract: The present invention provides an assembled film antenna structure. The antenna structure includes a substrate, a feeder and conductive medium. The substrate is provided with a conductive thin-profile antenna body. The antenna body includes a signal connector. One side of the conductive medium is connected with the feeder, and the other side is assembled and positioned securely onto the signal connector of antenna body. An anchor protrudes from one side of the conductive medium, and the anchor is embedded into the antenna body and substrate via hot pressing. Thus, the conductive medium and antenna body can be assembled in a more simple and fast way, generating an improved applicability and industrial efficiency.

Abstract: The present invention provides a film antenna assembly and a fabrication method thereof. The assembly includes an antenna body, which is a conducting body placed onto the substrate. The antenna body is provided with a signal connector, a feeder, and a conducting medium. One side of the conducting medium is coupled with the feeder, and the other side is located on the signal connector of antenna body. With this combined structure of the feeder, the film antenna assembly could be protected against damage, and the stable electrical connection resolves the coupling issue of the film antenna and feeder for improved applicability and economic efficiency.

Abstract: A method for fabricating a first electrode of a capacitor is described. A substrate comprising an insulating layer formed thereon is provided. The insulating layer has an opening. A silicon layer is formed on the insulating layer. The silicon layer is transformed to a hemispherical grain layer. An etching process is performed to remove a portion of the hemispherical grain layer outside the opening.

Abstract: A transformer with insulating structure includes a bobbin, a first winding, a second winding, a core set and a cover. The bobbin has a non-winding area with a plurality of partitions, and an insulating slot is formed between adjacent two partitions. The first winding and the second winding are wound around the bobbin, and the non-winding area is located between the first winding and the second winding. The core set is disposed around the first winding and the second winding. The cover includes a plurality of insulating protrusions extending into the insulating slots so that the insulating protrusions and partitions are alternately arranged to form a closed path and attain the insulation effect.

Abstract: Nowadays, in fabricating a magnetic recording medium, a disk substrate is first mechanically polished to form an even surface. Next, a laser texturing process is performed to produce a textured annular landing zone on the disk substrate. A magnetic layer is then formed on the disk substrate to complete the fabrication process. However, abnormal asperity usually remains on the surface of the disk substrate. Further, as the amount of exposure time in the air increases, an oxide film is inevitably formed on the surface of the disk substrate. Both of them degrade the surface smooth of the disk substrate, resulting in poor control of the size and structure of the laser texture. In addition, due to the irregular distribution of the mechanical polished texture on the disk substrate, a subsequently formed magnetic layer can not easily achieve the desired properties. This invention therefore provides a light texture process for fabricating a magnetic recording medium.