Patents by Inventor Yuan-Ming Chiu

Yuan-Ming Chiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10790124
    Abstract: A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: September 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu Chao Lin, Yuan-Ming Chiu, Ming-Ching Chang, Hsin-Yi Tsai, Chao-Cheng Chen
  • Publication number: 20180226235
    Abstract: A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.
    Type: Application
    Filed: April 2, 2018
    Publication date: August 9, 2018
    Inventors: Yu Chao Lin, Yuan-Ming Chiu, Ming-Ching Chang, Hsin-Yi Tsai, Chao-Cheng Chen
  • Patent number: 9934945
    Abstract: A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: April 3, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu Chao Lin, Yuan-Ming Chiu, Ming-Ching Chang, Hsin-Yi Tsai, Chao-Cheng Chen
  • Publication number: 20160268106
    Abstract: A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.
    Type: Application
    Filed: May 25, 2016
    Publication date: September 15, 2016
    Inventors: Yu Chao Lin, Yuan-Ming Chiu, Ming-Ching Chang, Hsin-Yi Tsai, Chao-Cheng Chen