Abstract: A method of overvoltage protection and an overvoltage protection device are provided. The method includes: electrically connecting an input terminal of a one-way pass circuit to a first equipment and electrically connecting an output terminal of the one-way pass circuit to a second equipment; electrically connecting a converter to the output terminal and a supercapacitor; detecting a first voltage of a first power flow at the output terminal by the converter; and charging the supercapacitor by the first power flow in response to the first voltage being greater than a first threshold.

Abstract: A semiconductor device includes a fin-shaped structure on the substrate, a shallow trench isolation (STI) around the fin-shaped structure, a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure, a second gate structure on the STI, and a third gate structure on the SDB structure. Preferably, a width of the third gate structure is greater than a width of the second gate structure and each of the first gate structure, the second gate structure, and the third gate structure includes a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer.

Abstract: An apparatus includes an optical pick-up unit (OPU) and a controller. The OPU is used for irradiating light beam to the optical disc. The controller is used for driving the optical pick-up head to apply a plurality of first predetermined erasing powers to a first data area and a plurality of second predetermined erasing powers to a second data area. A first optimum erasing power and a second optimum erasing power are obtained respectively by ascertaining an optical property of the optical disc. The first optimum erasing power and the second erasing power are used for erasing data stored in different areas of the optical disc.