Patents by Inventor Yuan-Nien CHEN

Yuan-Nien CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming FinFET gate oxide
    Patent number: 10103267
    Abstract: A semiconductor device includes a semiconductor fin, a first silicon nitride based layer, a lining oxide layer, a second silicon nitride based layer and a gate oxide layer. The semiconductor fin has a top surface, a first side surface adjacent to the top surface, and a second side surface which is disposed under and adjacent to the first side surface. The first silicon nitride based layer peripherally encloses the second side surface of the semiconductor fin. The lining oxide layer is disposed conformal to the first silicon nitride based layer. The second silicon nitride based layer is disposed conformal to the lining oxide layer. The gate oxide layer is disposed conformal to the top surface and the first side surface of the semiconductor fin.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: October 16, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Ta Wu, Ting-Chun Wang, Yuan-Nien Chen
  • Method of Forming FinFET Gate Oxide
    Publication number: 20170263751
    Abstract: A semiconductor device includes a semiconductor fin, a first silicon nitride based layer, a lining oxide layer, a second silicon nitride based layer and a gate oxide layer. The semiconductor fin has a top surface, a first side surface adjacent to the top surface, and a second side surface which is disposed under and adjacent to the first side surface. The first silicon nitride based layer peripherally encloses the second side surface of the semiconductor fin. The lining oxide layer is disposed conformal to the first silicon nitride based layer. The second silicon nitride based layer is disposed conformal to the lining oxide layer. The gate oxide layer is disposed conformal to the top surface and the first side surface of the semiconductor fin.
    Type: Application
    Filed: May 30, 2017
    Publication date: September 14, 2017
    Inventors: Cheng-Ta Wu, Ting-Chun Wang, Yuan-Nien Chen
  • Method of forming FinFET gate oxide
    Patent number: 9666692
    Abstract: A semiconductor device includes a semiconductor fin, a first silicon nitride based layer, a lining oxide layer, a second silicon nitride based layer and a gate oxide layer. The semiconductor fin has a top surface, a first side surface adjacent to the top surface, and a second side surface which is disposed under and adjacent to the first side surface. The first silicon nitride based layer peripherally encloses the second side surface of the semiconductor fin. The lining oxide layer is disposed conformal to the first silicon nitride based layer. The second silicon nitride based layer is disposed conformal to the lining oxide layer. The gate oxide layer is disposed conformal to the top surface and the first side surface of the semiconductor fin.
    Type: Grant
    Filed: July 31, 2015
    Date of Patent: May 30, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Ta Wu, Ting-Chun Wang, Yuan-Nien Chen
  • METHOD OF FORMING FINFET GATE OXIDE
    Publication number: 20170033199
    Abstract: A semiconductor device includes a semiconductor fin, a first silicon nitride based layer, a lining oxide layer, a second silicon nitride based layer and a gate oxide layer. The semiconductor fin has a top surface, a first side surface adjacent to the top surface, and a second side surface which is disposed under and adjacent to the first side surface. The first silicon nitride based layer peripherally encloses the second side surface of the semiconductor fin. The lining oxide layer is disposed conformal to the first silicon nitride based layer. The second silicon nitride based layer is disposed conformal to the lining oxide layer. The gate oxide layer is disposed conformal to the top surface and the first side surface of the semiconductor fin.
    Type: Application
    Filed: July 31, 2015
    Publication date: February 2, 2017
    Inventors: Cheng-Ta WU, Ting-Chun WANG, Yuan-Nien CHEN