Abstract: A complex fuel cell stack with hydrogen storage unit is introduced. Through the new configuration of the PEM fuel cell stack, no cooling system and cooling fluid is needed for the fuel cell stack, since hydrogen storage vessel can act as a heat sink to protect the expensive catalyst layer of the MEA of the fuel cell away from over-heated and damaged. In addition, the waste heat generated from the operation of the fuel cells can aid in release of hydrogen from hydrogen storage alloys inside the hydrogen storage vessel.

Abstract: A complex fuel cell stack with hydrogen storage unit is introduced. Through the new configuration of the PEM fuel cell stack, no cooling system and cooling fluid is needed for the fuel cell stack, since hydrogen storage vessel can act as a heat sink to protect the expensive catalyst layer of the MEA of the fuel cell away from over-heated and damaged. In addition, the waste heat generated from the operation of the fuel cells can aid in release of hydrogen from hydrogen storage alloys inside the hydrogen storage vessel.

Abstract: A method for preparing a scandium-doped hafnium oxide film, includes preparing a hafnium target having scandium granules distributed on a peripheral surface thereof; and proceeding a sputtering process to form a scandium-doped hafnium oxide film on a substrate, wherein the scandium doping of the scandium-doped hafnium oxide film is in the range of 3-13%. Such scandium-doped hafnium oxide film is able to be used as an oxide layer in semiconductor element which effectively suppresses the current leakage and reduces the dimension of the semiconductor element.

Abstract: A method for preparing scandium-doped hafnium oxide film includes preparing a hafnium target having scandium granules distributed on a peripheral surface thereof; and proceeding a sputtering process to form a scandium-doped hafnium oxide film on a substrate, wherein the scandium doping of the scandium-doped hafnium oxide film is in the range of 3-13%. Such scandium-doped hafnium oxide film is able to be used as an oxide layer in semiconductor element which effectively suppresses the current leakage and reduces the dimension of the semiconductor element.

Abstract: The present invention provides an apparatus for manufacturing stoichiometric Mg2Ni compound applicable to industry and capable of manufacturing continuously. The apparatus mainly comprises: a vacuum chamber, comprising a material feeding tube; a first crucible, set in the vacuum chamber; a heating device, set on the first crucible; a stirring device, set in the vacuum chamber, and above the first crucible; and a second crucible, set in the vacuum chamber, and on one side of the first crucible. Through this apparatus, a stoichiometric ?-phase Mg2Ni hydrogen storage compound with an exactly atomic ratio of 2:1, without other phases, and with excellent hydrogen absorption-desorption dynamics is given and the rest waste magnesium-rich liquid can be recycled.

Abstract: An electromagnetic induction heat device to heat a first metal mineral stone and a second mineral stone to form a melting mixture liquid without stifling. The device keeps a temperature of the melting mixture liquid between solidus and liquidus of binary alloy phase diagram of the first and second metal mineral stone, then an alloy with solid state precipitates from said melting mixture liquid.

Abstract: The present invention provides an apparatus for manufacturing stoichiometric Mg2Ni compound applicable to industry and capable of manufacturing continuously. The apparatus mainly comprises: a vacuum chamber, comprising a material feeding tube; a first crucible, set in the vacuum chamber; a heating device, set on the first crucible; a stirring device, set in the vacuum chamber, and above the first crucible; and a second crucible, set in the vacuum chamber, and on one side of the first crucible. The present invention also discloses a method to manufacture stoichiometric ?-phase Mg2Ni hydrogen storage compound. Through this apparatus and method, the residual waste magnesium-rich liquid in the crucible is poured to another independent crucible, and switch with the position of the crucible originally containing the ?-phase Mg2Ni hydrogen storage compound. Then, new raw materials of magnesium and nickel are added and heated.

Abstract: The invention provides a Ti doped lead barium zirconate dielectric material which could be applied to high frequency devices. The material comprises a compound with the chemical formula (PbI-XBaX)(ZrI-YTiY)O3, wherein X is greater than 0.3 and smaller than 1; Y is greater than zero and smaller than 0.5. The said dielectric material is tunable. A method for producing a dielectric film comprises the following steps. Firstly, prepare a Ti doped lead barium zirconate dielectric material by a first process which is one chosen from a group consisting of a solid state process, a coprecipitation process, a sol-gel process, and a hydrothermal process. Secondly, integrate the dielectric material into a target device using a second process to form a dielectric film, wherein the second process is one chosen from a group consisting of a chemical solution deposition process, a sputtering process, a chemical vapor deposition process, and a pulse laser deposition process.

Abstract: The present invention provides a method and apparatus of the present invention disclose the electromagnetic induction heat device to heat a first metal mineral stone and a second mineral stone to form a melting mixture liquid without stirring. Keep a temperature of the melting mixture liquid between solidus and liquidus of binary alloy phase diagram of the first and second metal mineral stone, then an alloy with solid state precipitates from said melting mixture liquid.

Abstract: The present invention provides a method for manufacturing high-purity hydrogen storage alloy Mg2Ni applicable to industry and capable of manufacturing continuously. First, raw materials of magnesium-nickel with weight percentage of nickel between 23.5 and 50.2 are heated, melt, and mixed uniformly. Cool the magnesium-nickel liquid and control the temperature to be above the solidification temperature and below the liquification temperature in the phase diagram of magnesium-nickel. By making advantage of segregation principle in phase diagrams, solid-state high-purity ?-phase Mg2Ni hydrogen storage alloy is given. Then high-purity ?-phase Mg2Ni hydrogen storage alloy with atomic ratio of 2:1, no other phases, and with excellent hydrogen absorption-desorption dynamics is given.

Abstract: The present invention provides a method and apparatus for manufacturing high-purity hydrogen storage alloy Mg2Ni applicable to industry and capable of manufacturing continuously. First, raw materials of magnesium-nickel with weight percentage of nickel between 23.5 and 50.2 are heated, melt, and mixed uniformly. Cool the magnesium-nickel liquid and control the temperature to be above the solidification temperature and below the liquification temperature in the phase diagram of magnesium-nickel. By making advantage of segregation principle in phase diagrams, solid-state high-purity ?-phase Mg2Ni hydrogen storage alloy is given. The residual waste magnesium-rich liquid in the crucible is poured to another independent crucible, and switch with the position of the crucible originally containing the ?-phase Mg2Ni hydrogen storage alloy. Then, new raw materials of magnesium and nickel are added and heated. Repeat the smelt steps described above continuously, and a continuous manufacturing method is introduced.