Abstract: A method of reducing gray energy consumption and achieving optimal gray energy saving for carbon neutralization is proposed. In a cellular network, each cell or BS (group of cells) has renewable (green) and non-renewable (gray, on-grid power) energy sources. The renewable (green) energy is highly variable and unpredictable, while non-renewable (gray, on-grid power) is stable but is not renewable and thus has more carbon impact. Each cell or BS (group of cells) services is associated UEs when it is on. In one novel aspect, a cell or BS (group of cells) that consumes more non-renewable energy can give some or all of its served UEs to another cell or BS (group of cells) that consumes less non-renewable energy.

Abstract: An information converting method and a system thereof are configured to convert a first information into a second information. An information obtaining step is performed to obtain the first information corresponding to a first communication protocol and transmit the first information to a converter. The first information includes a first access layer sub-information and an upper-layer protocol sub-information. A first access layer removing step is performed to drive the converter to remove the first access layer sub-information from the first information according to a converting process. A second access layer adding step is performed to drive the converter to add a second access layer sub-information corresponding to a second communication protocol to the first information and combine the second access layer sub-information with the upper-layer protocol sub-information according to the converting process, so that the first information is converted into the second information.

Abstract: A radio frequency identification device (RFID) includes an antenna, a first RFID chip and a second RFID chip. The antenna includes a first antenna pattern, a second antenna pattern and a shared emitting part, wherein the first antenna pattern and the second antenna pattern are connected to the shared emitting part respectively. The first RFID chip is electronically connected to the first antenna pattern and is adapted to transmit a first data using the first antenna pattern and the shared emitting part. The second RFID chip is electronically connected to the second antenna pattern and is adapted to transmit a second data using the second antenna pattern and the shared emitting part.

Abstract: A metal-interference-resisting dipole antenna comprises a first metal plane, a second metal plane and a cable; the cable comprises an inner conductor, an insulation layer and an outer conductor, and the inner conductor comprises a first inner connecting end electrically connected to the first metal plane, and a second inner connecting end adapted for receiving the first feed signal; the insulation layer partly covers the inner conductor, wherein the outer conductor is disposed at the outer of the insulation layer corresponding to the inner conductor, and the outer conductor is electrically insulated from the inner conductor; the outer conductor has a first outer connecting end and a second outer connecting end, and the first outer connecting end is electrically connected to the second metal plane, and the second outer connecting end is adapted for receiving the second feed signal.

Abstract: A MEMS structure includes a substrate, a dielectric layer, a membrane, a backplate, and a blocking layer. The substrate has a through-hole. The dielectric layer is disposed on the substrate and has a cavity in communication with the through-hole. The membrane has at least one vent hole, is embedded in the dielectric layer and together with the dielectric layer defines a first chamber that communicates with the through-hole. The backplate is disposed on the dielectric layer. One end of the blocking layer is embedded in the dielectric layer, and the other end of the blocking layer extends into the cavity; the blocking layer is spatially isolated from the membrane and at least partially overlaps with the at least one vent hole.

Abstract: A MEMS structure includes a substrate, a dielectric layer, a membrane, a backplate, and a blocking layer. The substrate has a through-hole. The dielectric layer is disposed on the substrate and has a cavity in communication with the through-hole. The membrane has at least one vent hole, is embedded in the dielectric layer and together with the dielectric layer defines a first chamber that communicates with the through-hole. The backplate is disposed on the dielectric layer. One end of the blocking layer is embedded in the dielectric layer, and the other end of the blocking layer extends into the cavity; the blocking layer is spatially isolated from the membrane and at least partially overlaps with the at least one vent hole.

Abstract: A metal-interference-resisting dipole antenna comprises a first metal plane, a second metal plane and a cable; the cable comprises an inner conductor, an insulation layer and an outer conductor, and the inner conductor comprises a first inner connecting end electrically connected to the first metal plane, and a second inner connecting end adapted for receiving the first feed signal; the insulation layer partly covers the inner conductor, wherein the outer conductor is disposed at the outer of the insulation layer corresponding to the inner conductor, and the outer conductor is electrically insulated from the inner conductor; the outer conductor has a first outer connecting end and a second outer connecting end, and the first outer connecting end is electrically connected to the second metal plane, and the second outer connecting end is adapted for receiving the second feed signal.

Abstract: A multi-band antenna with multiple feed points includes a substrate, a main body, a branch body, a first and a second coaxial cable. The main body and the branch body are disposed on the substrate and respectively have a first and a second signal feed point. The first coaxial cable has a first outer conductor connected to a grounding layer and a first core conductor connected to the first signal feed point for feeding the first signal feed point with a first signal, so that the main body generates a RF signal of a first frequency band. The second coaxial cable has a second outer conductor connected to the main body and a second core conductor connected to the second signal feed point for feeding the second signal feed point with a second signal, so that the branch body generates a RF signal of a second frequency band.

Abstract: Provided herein is a method for manufacturing a semiconductor device. A substrate including a MEMS region and a connection region thereon is provided; a dielectric layer disposed on the substrate in the connection region is provided; a poly-silicon layer disposed on the dielectric layer is provided, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer is provided; and a passivation layer covering the dielectric layer is provided, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer, and a conductive layer conformally covering the connection pad and the poly-silicon layer in the transition region is provided.

Abstract: A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.

Abstract: Provided herein is a method for manufacturing a semiconductor device. A substrate including a MEMS region and a connection region thereon is provided; a dielectric layer disposed on the substrate in the connection region is provided; a poly-silicon layer disposed on the dielectric layer is provided, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer is provided; and a passivation layer covering the dielectric layer is provided, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer, and a conductive layer conformally covering the connection pad and the poly-silicon layer in the transition region is provided.

Abstract: Provided herein is a semiconductor device is provided. The semiconductor device includes a substrate including a MEMS region and a connection region thereon; a dielectric layer disposed on the substrate in the connection region; a poly-silicon layer disposed on the dielectric layer, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer; and a passivation layer covering the dielectric layer, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer.

Abstract: A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.

Abstract: A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.

Abstract: A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.

Abstract: A microelectromechanical system microphone includes a semiconductor-on-insulator structure, a plurality of resistors, a plurality of first openings, and a vent hole. The semiconductor-on-insulator structure includes a substrate, an insulating layer and a semiconductor layer. The resistors are formed in the semiconductor layer, the first openings are formed in the semiconductor layer, and the vent hole is formed in the insulating layer and the substrate. The resistors are connected to each other to form a resistor pattern, and the first openings are all formed within the resistor pattern.

Abstract: Provided herein is a semiconductor device is provided. The semiconductor device includes a substrate including a MEMS region and a connection region thereon; a dielectric layer disposed on the substrate in the connection region; a poly-silicon layer disposed on the dielectric layer, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer; and a passivation layer covering the dielectric layer, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer.

Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a base substrate and a MEMS structure. The base substrate comprises a CMOS structure. The MEMS structure is formed on the base substrate adjacent to the CMOS structure. The MEMS structure is connected to the CMOS structure. The MEMS structure comprises a membrane and a backplate. The base substrate has a cavity corresponding to the MEMS structure.

Abstract: A microelectromechanical system microphone includes a semiconductor-on-insulator structure, a plurality of resistors, a plurality of first openings, and a vent hole. The semiconductor-on-insulator structure includes a substrate, an insulating layer and a semiconductor layer. The resistors are formed in the semiconductor layer, the first openings are formed in the semiconductor layer, and the vent hole is formed in the insulating layer and the substrate. The resistors are connected to each other to form a resistor pattern, and the first openings are all formed within the resistor pattern.

Abstract: The present invention discloses a touch panel frame structure comprising: a substrate, made of a transparent insulation material; a sensing layer, formed on a surface of the substrate; a conductor layer, disposed around the periphery of the sensing layer, and electrically coupled to the sensing layer; and an adhesive layer, disposed on a surface of the conductor layer and adhered to the conductor layer between the adhesive layer and the sensing layer, for covering the conductor layer completely. The adhesive layer with a protective coating effect is used for protecting the circuits of the conductor layer from peeling off during use. Particularly, when the substrate is made of a flexible material, the adhesive layer can provide a better protection effect.