Patents by Inventor Yuan-Shing Jing

Yuan-Shing Jing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dry Air/N2 post treatment to avoid the formation of B/P precipitation after BPSG film deposition
    Patent number: 6245688
    Abstract: A method to store wafers, immediately after the deposition of a layer of BPSG, into an environment of dry air or dry N2 or dry Ar or a N2O plasma chamber. This storage can occur over a variable period of time and with a variable delay between BPSG deposition and BPSG flow, dependent on which storage environment is applied. The surface of the deposited layer of BPSG is, in doing so, not exposed to H2O and the formation of unstable irregularities on the surface of the deposited BPSG is prevented.
    Type: Grant
    Filed: May 27, 1999
    Date of Patent: June 12, 2001
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Yuan-Shing Jing, Han-Chung Chen, Chiarn-Lung Lee