Abstract: Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.

Abstract: Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

Abstract: A memory device is provided. The memory device includes a substrate, a spin-orbit torque layer and a magnetic tunneling junction (MTJ). The MTJ stacks with the spin-orbit torque layer over the substrate and includes a synthetic free layer, a barrier layer and a reference layer. The synthetic free layer includes a synthetic antiferromagnetic structure, a first spacer layer and a free layer, wherein the synthetic antiferromagnetic structure is disposed between the spin-orbit torque layer and the free layer. The barrier layer is disposed beside the synthetic free layer. The reference layer is disposed beside the barrier layer.

Abstract: Described herein is a coating composition including a) from 25 to 50% by weight of a polymeric binder selected from polyacrylates (A1) and/or polyesters (A2) with a crosslinkable amount of hydroxyl groups, as component (A), b) from 15 to 25% by weight of a crosslinking agent having functional groups that are reactive to OH groups, as component (B), and c) from 35 to 50% by weight of at least one monomeric and/or oligomeric reactive diluent with at least one olefinic double bond, as component (C), where the weight percentage is based on the total weight of the coating composition. This coating composition has not only low VOC but also high hardness after curing. Also described herein are a preparation method of the coating composition and a method of use thereof.

Abstract: A memory device and a memory circuit is provided. The memory device includes a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ), a read word line, a selector and a write word line. The MTJ stands on the SOT layer. The read word line is electrically connected to the MTJ. The write word line is connected to the SOT layer through the selector. The write word line is electrically connected to the SOT layer when the selector is turned on, and the write word line is electrically isolated from the SOT layer when the selector is in an off state.

Abstract: A memory device and a memory circuit is provided. The memory device includes a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ), a read word line, a selector and a write word line. The MTJ stands on the SOT layer. The read word line is electrically connected to the MTJ. The write word line is connected to the SOT layer through the selector. The write word line is electrically connected to the SOT layer when the selector is turned on, and the write word line is electrically isolated from the SOT layer when the selector is in an off state.

Abstract: A memory device and a memory circuit is provided. The memory device includes a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ), a read word line, a selector and a write word line. The MTJ stands on the SOT layer. The read word line is electrically connected to the MTJ. The write word line is connected to the SOT layer through the selector. The write word line is electrically connected to the SOT layer when the selector is turned on, and the write word line is electrically isolated from the SOT layer when the selector is in an off state.

Abstract: A polyphase inductive power transfer system primary or secondary apparatus includes a magnetic coupling coil associated with each phase and a compensation network associated with each magnetic coupling coil for providing power to or receiving power from the respective coil. At least one of the compensation networks has a different power transfer characteristic to one or more of the other compensation networks.

Abstract: Methods of modifying the rate of systemic absorption of a drug administered to a subject by a pulmonary route, the method comprising covalently conjugating a hydrophilic polymer to a drug, wherein the drug has a half-life of elimination from the lung of less than about 180 minutes, to form a drug-polymer conjugate, wherein the drug-polymer conjugate has a net hydrophilic character and a weight average molecular weight of from about 50 to about 20,000 Daltons, and wherein the half-life of elimination from the lung of the drug-polymer conjugate is at least about 1.5-fold greater than the half-life of elimination from the lung of the drug, wherein the half-life of elimination from the lung is measured by bronchoalveolar lavage followed by assaying residual lung material.

Abstract: Described are methods and compositions for enhancing drought tolerance in plants. Nucleic acid constructs therefore are also described. Transgenic plants are also provided that exhibit enhanced agronomic properties. The inventors have demonstrated increased drought tolerance in connection with increased expression of the Xa21 gene.

Abstract: A memory device and a memory circuit is provided. The memory device includes a magnetic tunnel junction (MTJ), a read word line, a read selector, a write word line and a write selector. The read word line is connected to the MTJ with the read selector in between. The read word line is electrically connected to the MTJ when the read selector is turned on, and electrically disconnected from the MTJ when the read selector is in an off state. The write word line is connected to the MTJ with the write selector in between. The write word line is electrically connected to the MTJ when the write selector is turned on, and electrically disconnected from the MTJ when the write selector is off. A turn-on voltage of the write selector is greater than a turn-on voltage of the read selector.

Abstract: Methods of modifying the rate of systemic absorption of a drug administered to a subject by a pulmonary route, the method comprising covalently conjugating a hydrophilic polymer to a drug, wherein the drug has a half-life of elimination from the lung of less than about 180 minutes, to form a drug-polymer conjugate, wherein the drug-polymer conjugate has a net hydrophilic character and a weight average molecular weight of from about 50 to about 20,000 Daltons, and wherein the half-life of elimination from the lung of the drug-polymer conjugate is at least about 1.5-fold greater than the half-life of elimination from the lung of the drug, wherein the half-life of elimination from the lung is measured by bronchioalveolar lavage followed by assaying residual lung material.

Abstract: The present invention provides a method for promoting the growth and preservation quality of Agaricus bisporus, and belongs to the technical field of cultivation and preservation of edible fungi. In the present invention, the methyl jasmonate solution is sprayed onto the surface of Agaricus bisporus at a concentration of 10-200 ?mol/L when the Agaricus bisporus grows to the mushroom bud stage, which can accelerate the growth and development of the Agaricus bisporus, improve the post-harvest preservation quality of the Agaricus bisporus, and prolong the shelf life thereof, then improving the yield and commercial value of the Agaricus bisporus. The present invention provides a new method for increase in both production and income and post-harvest preservation of Agaricus bisporus, can be applied to large-scale industrial production of Agaricus bisporus, and has important economic benefits and application promotion value.

Abstract: Some embodiments relate to a probabilistic random number generator. The probabilistic random number generator includes a memory cell comprising a magnetic tunnel junction (MTJ), and an access transistor coupled to the MTJ of the memory cell. A variable current source is coupled to the access transistor and is configured to provide a plurality of predetermined current pulse shapes, respectively, to the MTJ to generate a bit stream that includes a plurality of probabilistic random bits, respectively, from the MTJ. The predetermined current pulse shapes have different current amplitudes and/or pulse widths corresponding to different switching probabilities for the MTJ.

Abstract: In some embodiments, the present disclosure relates to a memory device that includes a spin orbit torque (SOT) layer arranged over a substrate. A magnetic tunnel junction (MTJ) structure may be arranged over the SOT layer. The MTJ structure includes a free layer, a reference layer, and a diffusion barrier layer disposed between the free layer and the reference layer. A first conductive wire is arranged below the SOT layer and coupled to the SOT layer. A second conductive wire is arranged below the SOT layer and coupled to the SOT layer. A third conductive wire is arranged over the MTJ structure. The memory device further includes a first selector structure arranged between the first conductive wire and the SOT layer.

Abstract: The present invention relates to the field of intelligent machining, in particular to a parallel control method based on multi-period differential sampling and digital twinning technologies, the method comprising the following steps of: a. detecting machining conditions of dotting machine equipment by using a multi-period differential sampling technology; b. establishing a digital twinning control model; and c. controlling a simulation model of the dotting machine equipment according to a detection judgment result so as to perform parallel control on the dotting machine equipment.

Abstract: Various embodiments of the present disclosure are directed towards a memory device including a shunting layer overlying a spin orbit torque (SOT) layer. A magnetic tunnel junction (MTJ) structure overlies a semiconductor substrate. The MTJ structure includes a free layer, a reference layer, and a tunnel barrier layer disposed between the free and reference layers. A bottom electrode via (BEVA) underlies the MTJ structure, where the BEVA is laterally offset from the MTJ structure by a lateral distance. The SOT layer is disposed vertically between the BEVA and the MTJ structure, where the SOT layer continuously extends along the lateral distance. The shunting layer extends across an upper surface of the SOT layer and extends across at least a portion of the lateral distance.

Abstract: The instant disclosure relates to (among other things) compounds that are derivatives of 6-(2,3-dichlorophenyl)-1,2,4-triazin-5-amine. The compounds provided possess unique effects and differences over other phenyltriazines known in the art.

Abstract: Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.

Abstract: The invention provides methods and compositions for enhancing drought and/or salt tolerance in plants. Nucleic acid constructs therefore are also described. Transgenic plants are also provided that exhibit enhanced agronomic properties. The inventors have demonstrated increased drought and salt tolerance in connection with increased expression of the Xb3 gene.