Abstract: A semiconductor device includes a fin-shaped structure on the substrate, a shallow trench isolation (STI) around the fin-shaped structure, a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure, a second gate structure on the STI, and a third gate structure on the SDB structure. Preferably, a width of the third gate structure is greater than a width of the second gate structure and each of the first gate structure, the second gate structure, and the third gate structure includes a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer.

Abstract: A semiconductor device includes: a fin-shaped structure on the substrate; a shallow trench isolation (STI) around the fin-shaped structure; a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure; a second gate structure on the STI; and a third gate structure on the SDB structure, wherein a width of the third gate structure is greater than a width of the second gate structure.

Abstract: A semiconductor device includes: a fin-shaped structure on the substrate; a shallow trench isolation (STI) around the fin-shaped structure; a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure; a second gate structure on the STI; and a third gate structure on the SDB structure, wherein a width of the third gate structure is greater than a width of the second gate structure.

Abstract: A system includes an online shopping platform, a ingredient database assembly and a control unit. The control unit transmits to the online shopping platform entries of active ingredient data and preservative ingredient data respectively corresponding to an active ingredient and a preservative ingredient and respectively stored in an active ingredient database and a preservative ingredient database of the ingredient database assembly, for allowing selection of at least one of the entries via the online shopping platform to result in a desired formula. The desired formula is used for subsequent production of a customized ingredient composition when it is determined that the desired formula conforms with rules of formulation.

Abstract: A system includes an online shopping platform, a ingredient database assembly and a control unit. The control unit transmits to the online shopping platform entries of active ingredient data and preservative ingredient data respectively corresponding to an active ingredient and a preservative ingredient and respectively stored in an active ingredient database and a preservative ingredient database of the ingredient database assembly, for allowing selection of at least one of the entries via the online shopping platform to result in a desired formula. The desired formula is used for subsequent production of a customized ingredient composition when it is determined that the desired formula conforms with rules of formulation.

Abstract: The present invention provides a method of fabricating a fin field effect transistor (finFET), comprising: firstly, an interfacial layer is formed on a fin structure, next, a high-k dielectric layer is formed on the interfacial layer; afterwards, a stress film is formed on the high-k dielectric layer, an annealing process is then performed to the stress film, and an etching process is performed to remove the stress film.