Patents by Inventor Yuan-Ting Fei

Yuan-Ting Fei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12132149
    Abstract: A micro light-emitting device includes an epitaxial structure. The epitaxial structure has a bottom surface and includes a plurality of grooves, and the grooves are located on the bottom surface. Each of the grooves includes a plurality of sub-grooves, and the sub-grooves define an inner wall of each of the grooves. A ratio of a size of each of the grooves to a size of each of the sub-grooves is greater than 1 and less than or equal to 4000.
    Type: Grant
    Filed: November 17, 2021
    Date of Patent: October 29, 2024
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Yuan-Ting Fei, Kuang-Yuan Hsu
  • Publication number: 20240055557
    Abstract: An epitaxial structure includes a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, and a buffer layer structure. The light emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the light emitting layer. The buffer layer structure is disposed on one side of the first type semiconductor layer away from the second type semiconductor layer and includes a first buffer layer and a second buffer layer. The second buffer layer is located between the first buffer layer and the first type semiconductor layer, and the first buffer layer has a chlorine concentration greater than a chlorine concentration of the second buffer layer.
    Type: Application
    Filed: October 26, 2022
    Publication date: February 15, 2024
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yuan-Ting Fei, Chi-Heng Chen, Kuang-Yuan Hsu
  • Patent number: 11824016
    Abstract: An epitaxial semiconductor structure including a substrate, a semiconductor layer, and a balance structure is provided. The substrate has a first surface and a second surface opposite to each other. The semiconductor layer is formed on the first surface. The balance structure is formed on the second surface, the balance structure is configured to balance the thermal stress on the substrate, and the balance structure is composed of a plurality of non-continuous particulate materials. An epitaxial substrate is also provided.
    Type: Grant
    Filed: November 7, 2021
    Date of Patent: November 21, 2023
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Yuan-Ting Fei, Chi-Heng Chen
  • Publication number: 20220406733
    Abstract: An epitaxial semiconductor structure including a substrate, a semiconductor layer, and a balance structure is provided. The substrate has a first surface and a second surface opposite to each other. The semiconductor layer is formed on the first surface. The balance structure is formed on the second surface, the balance structure is configured to balance the thermal stress on the substrate, and the balance structure is composed of a plurality of non-continuous particulate materials. An epitaxial substrate is also provided.
    Type: Application
    Filed: November 7, 2021
    Publication date: December 22, 2022
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yuan-Ting Fei, Chi-Heng Chen
  • Publication number: 20220376138
    Abstract: A micro light-emitting device includes an epitaxial structure. The epitaxial structure has a bottom surface and includes a plurality of grooves, and the grooves are located on the bottom surface. Each of the grooves includes a plurality of sub-grooves, and the sub-grooves define an inner wall of each of the grooves. A ratio of a size of each of the grooves to a size of each of the sub-grooves is greater than 1 and less than or equal to 4000.
    Type: Application
    Filed: November 17, 2021
    Publication date: November 24, 2022
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Yuan-Ting Fei, Kuang-Yuan Hsu