Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an insulating layer, and a conductive layer. The active region has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The insulating layer covers a portion of the first semiconductor layer. The conductive layer covers the insulating layer and physically contacts the first semiconductor layer. The second semiconductor layer includes a first dopant and the first semiconductor layer includes a second dopant different from the first dopant. The first semiconductor layer includes a quaternary III-V semiconductor material, and the active region includes a quaternary semiconductor material, and the semiconductor device emits a radiation having a peak wavelength between 800 nm and 2000 nm.

Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an intermediate layer, a transition layer and a contact layer. The active structure has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The intermediate layer is located between the second semiconductor layer and the active structure. The transition layer is located on the second semiconductor layer. The contact layer is located on the transition layer.

Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an intermediate layer, a transition layer and a contact layer. The active structure has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The intermediate layer is located between the second semiconductor layer and the active structure. The transition layer is located on the second semiconductor layer. The contact layer is located on the transition layer.

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

Abstract: A semiconductor device includes a first semiconductor die, a second semiconductor die, a dielectric layer, a first redistribution layer and a second redistribution layer. The first semiconductor die includes a first bonding pad and a second bonding pad. The second semiconductor die includes a third bonding pad and a fourth bonding pad. The dielectric layer covers the first semiconductor die and the second semiconductor die, and defines a first opening exposing the first bonding pad and the second bonding pad and a second opening exposing the third bonding pad and the fourth bonding pad. The first redistribution layer is disposed on the dielectric layer, and electrically connects the first bonding pad and the third bonding pad. The second redistribution layer is disposed on the dielectric layer, and electrically connects the second bonding pad and the fourth bonding pad.

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

Abstract: A semiconductor device includes a first semiconductor die, a second semiconductor die, a dielectric layer, a first redistribution layer and a second redistribution layer. The first semiconductor die includes a first bonding pad and a second bonding pad. The second semiconductor die includes a third bonding pad and a fourth bonding pad. The dielectric layer covers the first semiconductor die and the second semiconductor die, and defines a first opening exposing the first bonding pad and the second bonding pad and a second opening exposing the third bonding pad and the fourth bonding pad. The first redistribution layer is disposed on the dielectric layer, and electrically connects the first bonding pad and the third bonding pad. The second redistribution layer is disposed on the dielectric layer, and electrically connects the second bonding pad and the fourth bonding pad.

Abstract: A semiconductor device includes a first die, a second die, an encapsulant, a first dielectric layer, and at least one first trace. The first die includes a first surface and a second surface opposite to the first surface and includes at least one first pad disposed adjacent to the first surface of the first die. The second die includes a first surface and a second surface opposite to the first surface and includes at least one second pad disposed adjacent to the first surface of the second die. The first dielectric layer is disposed on at least a portion of the first surface of the first die and at least a portion of the first surface of the second die. The first trace is disposed on the first dielectric layer, which connects the first pad to the second pad, and the first trace comprises an end portion disposed adjacent to the first pad and a body portion, and the end portion extends at an angle ?1 relative to a direction of extension of the body portion.

Abstract: A photovoltaic device having multi-junction nanostructures deposited as a multi-layered thin film on a substrate. Preferably, the device is grown as InxGa1-xN multi-layered junctions with the gradient x, where x is any value in the range from zero to one. The nanostructures are preferably 5-500 nanometers and more preferably 10-20 nanometers in diameter. The values of x are selected so that the bandgap of each layer is varied from 0.7 eV to 3.4 eV to match as nearly as possible the solar energy spectrum of 0.4 eV-4 eV.