Patents by Inventor Yuanxing Li

Yuanxing Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Systems, methods, and devices with write optimization in phase change memory
    Patent number: 8908417
    Abstract: Methods and systems for phase change memories and arrays with improved write characteristics. If a data word can be more efficiently written by e.g. exchanging SETs and RESETs, it is written as such on the fly, and e.g. a bit of overhead is written to indicate the transformation. This has a surprising synergy with phase change memory as SET operations usually take longer and consume more power than do RESET operations. In one sample embodiment of multilevel phase change memory, states intermediate between SET and RESET can be even less desirable to write than SETs, as they take more precision than do the extreme states of SET and RESET, so that a desirable transformation can be to exchange intermediate states for extreme states.
    Type: Grant
    Filed: April 8, 2014
    Date of Patent: December 9, 2014
    Inventors: Yuanxing Li, Van Butler, Ryan Jurasek
  • Systems, methods, and devices with write optimization in phase change memory
    Patent number: 8830731
    Abstract: Methods and systems for phase change memories and arrays with improved write characteristics. If a data word can be more efficiently written by e.g. exchanging SETs and RESETs, it is written as such on the fly, and e.g. a bit of overhead is written to indicate the transformation. This has a surprising synergy with phase change memory as SET operations usually take longer and consume more power than do RESET operations. In one sample embodiment of multilevel phase change memory, states intermediate between SET and RESET can be even less desirable to write than SETs, as they take more precision than do the extreme states of SET and RESET, so that a desirable transformation can be to exchange intermediate states for extreme states.
    Type: Grant
    Filed: April 1, 2014
    Date of Patent: September 9, 2014
    Inventors: Yuanxing Li, Van Butler, Ryan Jurasek
  • Systems, Methods, and Devices with Write Optimization in Phase Change Memory
    Publication number: 20140211555
    Abstract: Methods and systems for phase change memories and arrays with improved write characteristics. If a data word can be more efficiently written by e.g. exchanging SETs and RESETs, it is written as such on the fly, and e.g. a bit of overhead is written to indicate the transformation. This has a surprising synergy with phase change memory as SET operations usually take longer and consume more power than do RESET operations. In one sample embodiment of multilevel phase change memory, states intermediate between SET and RESET can be even less desirable to write than SETs, as they take more precision than do the extreme states of SET and RESET, so that a desirable transformation can be to exchange intermediate states for extreme states.
    Type: Application
    Filed: April 1, 2014
    Publication date: July 31, 2014
    Applicant: BEING ADVANCED MEMORY CORPORATION
    Inventors: Yuanxing Li, Van Butler, Ryan Jurasek
  • Systems, Methods, and Devices with Write Optimization in Phase Change Memory
    Publication number: 20140211554
    Abstract: Methods and systems for phase change memories and arrays with improved write characteristics. If a data word can be more efficiently written by e.g. exchanging SETs and RESETs, it is written as such on the fly, and e.g. a bit of overhead is written to indicate the transformation. This has a surprising synergy with phase change memory as SET operations usually take longer and consume more power than do RESET operations. In one sample embodiment of multilevel phase change memory, states intermediate between SET and RESET can be even less desirable to write than SETs, as they take more precision than do the extreme states of SET and RESET, so that a desirable transformation can be to exchange intermediate states for extreme states.
    Type: Application
    Filed: April 8, 2014
    Publication date: July 31, 2014
    Applicant: BEING ADVANCED MEMORY CORPORATION
    Inventors: Yuanxing Li, Van Butler, Ryan Jurasek
  • Systems, Methods, and Devices with Write Optimization in Phase Change Memory
    Publication number: 20140211556
    Abstract: Methods and systems for phase change memories and arrays with improved write characteristics. If a data word can be more efficiently written by e.g. exchanging SETs and RESETs, it is written as such on the fly, and e.g. a bit of overhead is written to indicate the transformation. This has a surprising synergy with phase change memory as SET operations usually take longer and consume more power than do RESET operations. In one sample embodiment of multilevel phase change memory, states intermediate between SET and RESET can be even less desirable to write than SETs, as they take more precision than do the extreme states of SET and RESET, so that a desirable transformation can be to exchange intermediate states for extreme states.
    Type: Application
    Filed: April 1, 2014
    Publication date: July 31, 2014
    Applicant: Being Advanced Memory Corporation
    Inventors: Yuanxing Li, Van Butler, Ryan Jurasek
  • Systems, methods, and devices with write optimization in phase change memory
    Patent number: 8773891
    Abstract: Methods and systems for phase change memories and arrays with improved write characteristics. If a data word can be more efficiently written by e.g. exchanging SETs and RESETs, it is written as such on the fly, and e.g. a bit of overhead is written to indicate the transformation. This has a surprising synergy with phase change memory as SET operations usually take longer and consume more power than do RESET operations. In one sample embodiment of multilevel phase change memory, states intermediate between SET and RESET can be even less desirable to write than SETs, as they take more precision than do the extreme states of SET and RESET, so that a desirable transformation can be to exchange intermediate states for extreme states.
    Type: Grant
    Filed: August 27, 2013
    Date of Patent: July 8, 2014
    Assignee: Being Advanced Memory Corporation
    Inventors: Yuanxing Li, Van Butler, Ryan Jurasek
  • Systems, Methods, and Devices with Write Optimization in Phase Change Memory
    Publication number: 20140071748
    Abstract: Methods and systems for phase change memories and arrays with improved write characteristics. If a data word can be more efficiently written by e.g. exchanging SETs and RESETs, it is written as such on the fly, and e.g. a bit of overhead is written to indicate the transformation. This has a surprising synergy with phase change memory as SET operations usually take longer and consume more power than do RESET operations. In one sample embodiment of multilevel phase change memory, states intermediate between SET and RESET can be even less desirable to write than SETs, as they take more precision than do the extreme states of SET and RESET, so that a desirable transformation can be to exchange intermediate states for extreme states.
    Type: Application
    Filed: August 27, 2013
    Publication date: March 13, 2014
    Applicant: Being Advanced Memory Corporation
    Inventors: Yuanxing Li, Van Butler, Ryan Jurasek