Patents by Inventor Yuan-Yu Hsieh

Yuan-Yu Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Alternating current (AC) stress test circuit, method for evaluating AC stress induced hot carrier injection (HCI) degradation, and test structure for HCI degradation evaluation
    Patent number: 8283941
    Abstract: An AC stress test circuit for HCI degradation evaluation in semiconductor devices includes a ring oscillator circuit, first and second pads, and first and second isolating switches. The ring oscillator circuit has a plurality of stages connected in series to form a loop. Each of the stages comprises a first node and a second node. The first and second isolating switches respectively connect the first and second pads to the first and second nodes of a designated stage and both are switched-off during ring oscillator stressing of the designated stage. The present invention also provides a method of evaluating AC stress induced HCI degradation, and a test structure.
    Type: Grant
    Filed: February 11, 2010
    Date of Patent: October 9, 2012
    Assignee: United Microelectronics Corp.
    Inventors: Sung-Nien Kuo, Yuan-Yu Hsieh, Wen-Hsiung Ko, Jih-San Lee, Kuei-Chi Juan, Kuan-Cheng Su
  • Alternating Current (AC) Stress Test Circuit, Method for Evaluating AC Stress Induced Hot Carrier Injection (HCI) Degradation, and Test Structure for HCI Degradation Evaluation
    Publication number: 20110193586
    Abstract: An AC stress test circuit for HCI degradation evaluation in semiconductor devices includes a ring oscillator circuit, first and second pads, and first and second isolating switches. The ring oscillator circuit has a plurality of stages connected in series to form a loop. Each of the stages comprises a first node and a second node. The first and second isolating switches respectively connect the first and second pads to the first and second nodes of a designated stage and both are switched-off during ring oscillator stressing of the designated stage. The present invention also provides a method of evaluating AC stress induced HCI degradation, and a test structure.
    Type: Application
    Filed: February 11, 2010
    Publication date: August 11, 2011
    Inventors: Sung-Nien Kuo, Yuan-Yu Hsieh, Wen-Hsiung Ko, Jih-San Lee, Kuei-Chi Juan, Kuan-Cheng Su