Abstract: The present disclosure provides a semiconductor device with an air gap and a boron nitride cap for reducing capacitive coupling in a pattern-dense region and a method for preparing the semiconductor device. The semiconductor device includes a first metal plug and a second metal plug disposed over a pattern-dense region of a semiconductor substrate. The semiconductor device also includes a third metal plug and a fourth metal plug disposed over a pattern-loose region of the semiconductor substrate. The semiconductor device further includes a boron nitride layer disposed over the pattern-dense region and the pattern-loose region of the semiconductor substrate. A first portion of the boron nitride layer between the first metal plug and the second metal plug is separated from the semiconductor substrate by an air gap, and a second portion of the boron nitride layer between the third metal plug and the fourth metal plug is in direct contact with the semiconductor substrate.

Abstract: The present disclosure provides a method for preparing a vertical memory structure with air gaps. The method includes providing a substrate; forming an impurity layer at an upper portion of the substrate; forming a semiconductor stack including a lower semiconductor pattern structure filling a recess on the substrate and protruding from an upper surface of the substrate in a first direction substantially perpendicular to the upper surface of the substrate; forming a plurality of gate electrodes surrounding a sidewall of the semiconductor stack, the plurality of gate electrodes being at a plurality of levels, respectively, so as to be spaced apart from each other in the first direction; and forming a plurality of air gap structures disposed at outer sides of the plurality of gate electrodes respectively.

Abstract: The present disclosure provides a method for preparing a semiconductor device. The method includes forming a first metal plug, a second metal plug, a third metal plug, and a fourth metal plug over a semiconductor substrate. The method also includes depositing a boron nitride layer over the first metal plug, the second metal plug, the third metal plug, and the fourth metal plug. A first portion of the boron nitride layer extends between the first metal plug and the second metal plug such that the first portion of the boron nitride layer and the semiconductor substrate are separated by an airgap while a second portion of the boron nitride layer extends between the third metal plug and the fourth metal plug such that the second portion of the boron nitride layer is in direct contact with the semiconductor substrate.

Abstract: The present disclosure provides a semiconductor device with an air gap and a boron nitride cap for reducing capacitive coupling in a pattern-dense region and a method for preparing the semiconductor device. The semiconductor device includes a first metal plug and a second metal plug disposed over a pattern-dense region of a semiconductor substrate. The semiconductor device also includes a third metal plug and a fourth metal plug disposed over a pattern-loose region of the semiconductor substrate. The semiconductor device further includes a boron nitride layer disposed over the pattern-dense region and the pattern-loose region of the semiconductor substrate. A first portion of the boron nitride layer between the first metal plug and the second metal plug is separated from the semiconductor substrate by an air gap, and a second portion of the boron nitride layer between the third metal plug and the fourth metal plug is in direct contact with the semiconductor substrate.

Abstract: The present disclosure provides a vertical memory structure with air gaps and a method for preparing the vertical memory structure. The vertical memory structure includes a semiconductor stack including a lower semiconductor pattern structure filling a recess on a substrate and protruding from an upper surface of the substrate in a first direction substantially perpendicular to the upper surface of the substrate; a plurality of gate electrodes surrounding a sidewall of the semiconductor stack, the plurality of gate electrodes being at a plurality of levels, respectively, so as to be spaced apart from each other in the first direction; and a plurality of air gap structures disposed at outer sides of the plurality of gate electrodes respectively.

Abstract: The present application discloses a semiconductor device structure and a method for preparing the same. The method includes forming a ring structure over a substrate; performing an etching process to form an annular semiconductor fin under the ring structure; forming a lower source/drain region on the surface of the substrate in contact with a bottom portion of the annular semiconductor fin; forming an inner gate structure in contact with an inner sidewall of the annular semiconductor fin and forming an outer gate structure in contact with an outer sidewall of the annular semiconductor fin; and forming an upper source/drain region on an upper portion of the annular semiconductor fin.

Abstract: The present application discloses a semiconductor device structure and a method for preparing the same. The method includes forming a ring structure over a substrate; performing an etching process to form an annular semiconductor fin under the ring structure; forming a lower source/drain region on the surface of the substrate in contact with a bottom portion of the annular semiconductor fin; forming an inner gate structure in contact with an inner sidewall of the annular semiconductor fin and forming an outer gate structure in contact with an outer sidewall of the annular semiconductor fin; and forming an upper source/drain region on an upper portion of the annular semiconductor fin.

Abstract: A cable assembly comprises: an insulative housing; a plurality of contacts received into the insulative housing; a spacer assembled to a rear end of the insulative housing; a wire management assembled to a rear end of the spacer, and a cable electrically connected to the rear ends of the plurality of contacts. The wire management defines a plurality of first and second channels formed on top surfaces. Each of second channel defines a rear inlet and two front outlets. The cable comprises several pairs of signal wires received into the corresponding second channels. Each differential pair of signal wires comprises two signal conductors, a grounding conductor and a shielding layer surrounding the two signal conductors and a grounding conductors. Two front ends of the two signal conductors are exposed out of the shielding layer and extending out of the wire management through two outlets.

Abstract: A cable assembly comprises: an insulative housing; a plurality of contacts received into the insulative housing; a spacer assembled to a rear end of the insulative housing; a wire management assembled to a rear end of the spacer, and a cable electrically connected to the rear ends of the plurality of contacts. The wire management defines a plurality of first and second channels formed on top surfaces. Each of second channel defines a rear inlet and two front outlets. The cable comprises several pairs of signal wires received into the corresponding second channels. Each differential pair of signal wires comprises two signal conductors, a grounding conductor and a shielding layer surrounding the two signal conductors and a grounding conductors. Two front ends of the two signal conductors are exposed out of the shielding layer and extending out of the wire management through two outlets.

Abstract: A method for fabricating a metal redistribution layer is described. A first opening and a second opening are formed in a dielectric layer over a first region and a second region thereof, respectively. A plurality of third openings are formed in the dielectric layer exposed by the first opening in the first region and a plurality of fourth openings are formed in the dielectric layer exposed by the second opening in the second region. A metal material is formed over the dielectric layer and in the first, second, third and fourth openings. A plurality of recesses is formed in the metal materials overlying the third and fourth openings. The metal material in the first region is patterned by using the recesses formed in portions of the metal material overlying the fourth openings in the second region as an alignment mark to form a metal redistribution layer.

Abstract: A time control system and a method for a projector. The time control system comprises an input module, a processor, a timer, and at least one output module. The input module is used to input at least one time parameter that is set by the processor into the timer. The timer is used to generate at least one trigger signal by counting the at least one time parameter. Meanwhile, the output module is used to output a reminder signal relating to the at least one trigger signal. The time control system is applied for reminding users.

Abstract: A connection method for providing a remote real-time audio and/or video (AV) signal includes: when a connection request that corresponds to a selected AV terminal is received from a user terminal, determining whether the selected AV terminal belongs to an AV terminal group, which includes a plurality of AV terminals; if it is determined that the selected AV terminal belongs to the AV terminal group, establishing connections with the selected AV terminal and at least one other AV terminal in the AV terminal group, and forwarding the AV signal of the selected AV terminal to the user terminal; and in response to a switch command from the user terminal, forwarding the AV signal of another one of the AV terminals in the AV terminal group to the user terminal. A communication framework that performs the method is also disclosed.

Abstract: A method for providing a remote real-time audio and/or video (AV) signal includes: displaying an AV terminal list that records a plurality of AV terminals, and requesting a user terminal to select one of the AV terminals in the AV terminal list; determining whether a connection has been established with the selected AV terminal; establishing the connection with the selected AV terminal, receiving the AV signal of the selected AV terminal, and forwarding the AV signal to the user terminal if it is determined that the connection has not been established; and making a duplicate of the AV signal of the selected AV terminal, and forwarding the duplicate AV signal to the user terminal if it is determined that the connection has been established. A communication framework that performs the method is also disclosed.

Abstract: This invention discloses a time control system and a method for a projector. The time control system comprises an input module, a processor, a timer, and at least one output module. The input module is used to input at least one time parameter that is set by the processor into the timer. The timer is used to generate at least one trigger signal by counting the at least one time parameter. Meanwhile, the output module is used to output a reminder signal relating to the at least one trigger signal. The time control system is applied for reminding users.