Abstract: Various embodiments relate to classifying comparators based on comparator offsets. A method may include applying, via a strobe, a first voltage to each of a first input and a second input of a comparator to generate a number of output signals from the comparator, wherein each output signal has one of a first polarity and a second polarity. The method may further include in response to each of the number of output signals being the first polarity, applying, via a strobe, an external offset voltage having the second polarity to the comparator to generate a second number of output signals. Further, the method may include in response to each of the second number of output signals being the same polarity, identifying the comparator as a reliable comparator.

Abstract: Described herein are coated chloride salt particles, including NaCl/TiO2 and NaCl/SiO2 core/shell particles, along with methods of making and using the same.

Abstract: Various embodiments relate to classifying comparators based on comparator offsets. A method may include applying, via a strobe, a first voltage to each of a first input and a second input of a comparator to generate a number of output signals from the comparator, wherein each output signal has one of a first polarity and a second polarity. The method may further include in response to each of the number of output signals being the first polarity, applying, via a strobe, an external offset voltage having the second polarity to the comparator to generate a second number of output signals. Further, the method may include in response to each of the second number of output signals being the same polarity, identifying the comparator as a reliable comparator.

Abstract: Described herein are coated chloride salt particles, including NaCl/TiO2 and NaCl/SiO2 core/shell particles, along with methods of making and using the same.

Abstract: Described herein are coated chloride salt particles, including NaCl/TiO2 and NaCl/SiO2 core/shell particles, along with methods of making and using the same.

Abstract: Described herein are coated chloride salt particles, including NaCl/TiO2 and NaCl/SiO2 core/shell particles, along with methods of making and using the same.

Abstract: The present invention relates to a method of using a microfluidic chip comprising introducing a gas into the microfluidic chip to replace the liquid that has been introduced into the microfluidic chip and forming a micro-reaction chamber in the form of a liquid-in-gas in the microfluidic chip. The present invention also relates to a method for obtaining assay data, a computer program product embodied in a computer-readable medium and a kit. The methods described in the present invention are easy to operate, low cost, versatile, enabling rapid exchange of fluids, achieving efficient separation and capture of single particles with high purity. In addition, the methods can avoid clogging the chip and facilitate recycling.

Abstract: Described herein are coated chloride salt particles, including NaCl/TiO2 and NaCl/SiO2 core/shell particles, along with methods of making and using the same.

Abstract: Various embodiments relate to classifying comparators based on comparator offsets. A method may include applying, via a strobe, a first voltage to each of a first input and a second input of a comparator to generate a number of output signals from the comparator, wherein each output signal has one of a first polarity and a second polarity. The method may further include in response to each of the number of output signals being the first polarity, applying, via a strobe, an external offset voltage having the second polarity to the comparator to generate a second number of output signals. Further, the method may include in response to each of the second number of output signals being the same polarity, identifying the comparator as a reliable comparator.

Abstract: Described herein are coated chloride salt particles, including NaCl/TiO2 and NaCl/SiO2 core/shell particles, along with methods of making and using the same.

Abstract: Apparatuses, methods and systems for monitoring vehicle parking occupancy are disclosed. One method includes intermittently receiving, by a wireless node, a wireless signal from a vehicle sensing device, wherein the vehicle sensing device transmits the wireless signal upon sensing a change in vehicle occupancy of an associated parking location, wherein the wireless signal includes a vehicle sensing indicator, wherein the vehicle sensing indicator indicates whether the vehicle sensing device senses vehicle occupancy of the associated parking location, measuring a signal quality of the intermittently received wireless signal over time, correlating the measured signal quality of the intermittently received wireless signal over time with the vehicle occupancy indictor, and identifying errors in the vehicle sensing indicator based on the correlating of the measured signal quality of the intermittently received wireless signal over time with the vehicle occupancy indictor.

Abstract: Apparatuses, methods and systems for monitoring vehicle parking occupancy are disclosed. One method includes intermittently receiving, by a wireless node, a wireless signal from a vehicle sensing device, wherein the vehicle sensing device transmits the wireless signal upon sensing a change in vehicle occupancy of an associated parking location, wherein the wireless signal includes a vehicle sensing indicator, wherein the vehicle sensing indicator indicates whether the vehicle sensing device senses vehicle occupancy of the associated parking location, measuring a signal quality of the intermittently received wireless signal over time, correlating the measured signal quality of the intermittently received wireless signal over time with the vehicle occupancy indictor, and identifying errors in the vehicle sensing indicator based on the correlating of the measured signal quality of the intermittently received wireless signal over time with the vehicle occupancy indictor.

Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, an insulating layer and a gate electrode. The drain electrode is spaced from the source electrode. The semiconductor layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated with the source electrode, the drain electrode and the semiconductor layer by the insulating layer. The gate electrode, the source electrode, and the drain electrode comprise a plurality of first carbon nanotubes. The semiconductor layer comprises a plurality of second carbon nanotubes. A distribution density of the plurality of first carbon nanotubes is about 20 times as much as that of the plurality of second carbon nanotubes. A number of the plurality of second carbon nanotubes in 1 square micrometers is smaller than or equal to 1.

Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, an insulating layer and a gate electrode. The drain electrode is spaced from the source electrode. The semiconductor layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated with the source electrode, the drain electrode and the semiconductor layer by the insulating layer. The gate electrode, the source electrode, and the drain electrode comprise a plurality of first carbon nanotubes. The semiconductor layer comprises a plurality of second carbon nanotubes. A distribution density of the plurality of first carbon nanotubes is about 20 times as much as that of the plurality of second carbon nanotubes. A number of the plurality of second carbon nanotubes in 1 square micrometers is smaller than or equal to 1.

Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, an insulating layer and a gate electrode. The drain electrode is spaced from the source electrode. The semiconductor layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated with the source electrode, the drain electrode and the semiconductor layer by the insulating layer. The gate electrode, the source electrode, and the drain electrode comprise a plurality of first carbon nanotubes. The semiconductor layer comprises a plurality of second carbon nanotubes. A distribution density of the plurality of first carbon nanotubes is about 20 times as much as that of the plurality of second carbon nanotubes. A number of the plurality of second carbon nanotubes in 1 square micrometers is smaller than or equal to 1.

Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, an insulating layer and a gate electrode. The drain electrode is spaced from the source electrode. The semiconductor layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated with the source electrode, the drain electrode and the semiconductor layer by the insulating layer. The gate electrode, the source electrode, and the drain electrode comprise a plurality of first carbon nanotubes. The semiconductor layer comprises a plurality of second carbon nanotubes. A distribution density of the plurality of first carbon nanotubes is about 20 times as much as that of the plurality of second carbon nanotubes. A number of the plurality of second carbon nanotubes in 1 square micrometers is smaller than or equal to 1.

Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The insulating layer has a first surface and a second surface opposite to the first surface. The gate electrode is located on the first surface of the insulating layer. The source electrode, the drain electrode, and the semiconductor layer are located on the second surface of the insulating layer. The gate electrode, the source electrode, and the drain electrode include a first carbon nanotube layer. The semiconductor layer includes a second carbon nanotube layer. A first film resistor of the first carbon nanotube layer is smaller than or equal to 10 k? per square. A second film resistor of the second carbon nanotube layer is greater than or equal to 100 k? per square.

Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The transition layer is sandwiched between the insulating layer and the semiconductor layer. The transition layer is a silicon-oxide cross-linked polymer layer including a plurality of Si atoms. The plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer.

Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The insulating layer has a first surface and a second surface opposite to the first surface. The gate electrode is located on the first surface of the insulating layer. The source electrode, the drain electrode, and the semiconductor layer are located on the second surface of the insulating layer. The gate electrode, the source electrode, and the drain electrode include a first carbon nanotube layer. The semiconductor layer includes a second carbon nanotube layer. A first film resistor of the first carbon nanotube layer is smaller than or equal to 10 k? per square. A second film resistor of the second carbon nanotube layer is greater than or equal to 100 k? per square.

Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The transition layer is sandwiched between the insulating layer and the semiconductor layer. The transition layer is a silicon-oxide cross-linked polymer layer including a plurality of Si atoms. The plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer.