Patents by Inventor Yuan Zou
Yuan Zou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240129236Abstract: The present application discloses a DQN-based distributed computing network coordinate flow scheduling system and method.Type: ApplicationFiled: August 23, 2023Publication date: April 18, 2024Inventors: Yuan LIANG, Geyang XIAO, Yuanhao HE, Tao ZOU, Ruyun ZHANG, Xiaofeng CHENG
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Publication number: 20240083137Abstract: Embodiments of this application provide a composite structure including a substrate layer and a functional layer disposed on a surface of at least one side of the substrate layer. The substrate layer includes a first support member and a second support member that are disposed side by side and a bendable connecting member connected to and disposed between the first support member and the second support member. A material of the first support member and the second support member includes a hard rubber fiber composite material, and the functional layer includes one or more of an electrically conductive layer, a thermally conductive layer, or an impact-resistant layer.Type: ApplicationFiled: November 22, 2023Publication date: March 14, 2024Inventors: Yuan QIN, Yangyang LI, Chun ZOU, Weiwei YAO, Nanjian SUN, Taimeng CHEN, Zhaoliang SU
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Publication number: 20240079757Abstract: An electronic device may be provided with peripheral conductive housing structures having first and second segments. A flexible printed circuit may have a first tail that extends along the first and second segments and a second tail that extends along the first segment. A conductive trace on the first tail may be coupled to an antenna feed terminal on the second segment. A conductive trace on the second tail may couple the conductive trace on the first tail to the first segment. A tuner and filters may be disposed on the flexible printed circuit and may be coupled to the conductive traces. The conductive trace on the second tail may have a tapered width. An antenna in the device may have a resonating element that includes both the first and second segments, thereby allowing the antenna to exhibit a wide bandwidth from 1.1-5 GHz.Type: ApplicationFiled: August 30, 2023Publication date: March 7, 2024Inventors: Seyed Mohammad Amjadi, Yuan Tao, Hao Xu, Yiren Wang, Xue Yang, Mattia Pascolini, Hongfei Hu, Enrique Ayala Vazquez, Ming-Ju Tsai, Ana Papio Toda, Yuancheng Xu, Jingni Zhong, Nikolaj P Kammersgaard, Sidharath Jain, Haozhan Tian, Ming Chen, Linqiang Zou
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Publication number: 20230294062Abstract: Described herein are coated chloride salt particles, including NaCl/TiO2 and NaCl/SiO2 core/shell particles, along with methods of making and using the same.Type: ApplicationFiled: November 18, 2022Publication date: September 21, 2023Inventors: Linda Yuan ZOU, Mustapha JOUIAD, Abdelali ZAKI, Nabil EL HADRI, Haoran LIANG
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Publication number: 20230149876Abstract: Described herein are coated chloride salt particles, including NaCl/TiO2 and NaCl/SiO2 core/shell particles, along with methods of making and using the same.Type: ApplicationFiled: November 18, 2022Publication date: May 18, 2023Inventors: Linda Yuan ZOU, Mustapha JOUIAD, Abdelali ZAKI, Nabil EL HADRI, Haoran LIANG
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Publication number: 20220410155Abstract: The present invention relates to a method of using a microfluidic chip comprising introducing a gas into the microfluidic chip to replace the liquid that has been introduced into the microfluidic chip and forming a micro-reaction chamber in the form of a liquid-in-gas in the microfluidic chip. The present invention also relates to a method for obtaining assay data, a computer program product embodied in a computer-readable medium and a kit. The methods described in the present invention are easy to operate, low cost, versatile, enabling rapid exchange of fluids, achieving efficient separation and capture of single particles with high purity. In addition, the methods can avoid clogging the chip and facilitate recycling.Type: ApplicationFiled: November 5, 2020Publication date: December 29, 2022Inventors: Chaoyong YANG, Mingxia ZHANG, Yuan ZOU
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Patent number: 11504687Abstract: Described herein are coated chloride salt particles, including NaCl/TiO2 and NaCl/SiO2 core/shell particles, along with methods of making and using the same.Type: GrantFiled: October 11, 2017Date of Patent: November 22, 2022Assignees: Khalifa University of Science and Technology, National Center of MeteorologyInventors: Linda Yuan Zou, Mustapha Jouiad, Abdelali Zaki, Nabil El Hadri, Haoran Liang
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Publication number: 20200213139Abstract: Various embodiments relate to classifying comparators based on comparator offsets. A method may include applying, via a strobe, a first voltage to each of a first input and a second input of a comparator to generate a number of output signals from the comparator, wherein each output signal has one of a first polarity and a second polarity. The method may further include in response to each of the number of output signals being the first polarity, applying, via a strobe, an external offset voltage having the second polarity to the comparator to generate a second number of output signals. Further, the method may include in response to each of the second number of output signals being the same polarity, identifying the comparator as a reliable comparator.Type: ApplicationFiled: March 6, 2019Publication date: July 2, 2020Inventor: Zhi-Yuan Zou
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Publication number: 20190232246Abstract: Described herein are coated chloride salt particles, including NaCl/TiO2 and NaCl/SiO2 core/shell particles, along with methods of making and using the same.Type: ApplicationFiled: October 11, 2017Publication date: August 1, 2019Inventors: Linda Yuan ZOU, Jouiad MUSTAPHA, Zaki ABDELALI, Nabil EL HADRI, Liang HAORAN
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Patent number: 10134275Abstract: Apparatuses, methods and systems for monitoring vehicle parking occupancy are disclosed. One method includes intermittently receiving, by a wireless node, a wireless signal from a vehicle sensing device, wherein the vehicle sensing device transmits the wireless signal upon sensing a change in vehicle occupancy of an associated parking location, wherein the wireless signal includes a vehicle sensing indicator, wherein the vehicle sensing indicator indicates whether the vehicle sensing device senses vehicle occupancy of the associated parking location, measuring a signal quality of the intermittently received wireless signal over time, correlating the measured signal quality of the intermittently received wireless signal over time with the vehicle occupancy indictor, and identifying errors in the vehicle sensing indicator based on the correlating of the measured signal quality of the intermittently received wireless signal over time with the vehicle occupancy indictor.Type: GrantFiled: June 9, 2017Date of Patent: November 20, 2018Assignee: PNI SensorInventors: Andrew T. Taylor, Tyler Bryant, Yuan Zou, Byron Whitlock, Joseph F. Miller
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Publication number: 20180301027Abstract: Apparatuses, methods and systems for monitoring vehicle parking occupancy are disclosed. One method includes intermittently receiving, by a wireless node, a wireless signal from a vehicle sensing device, wherein the vehicle sensing device transmits the wireless signal upon sensing a change in vehicle occupancy of an associated parking location, wherein the wireless signal includes a vehicle sensing indicator, wherein the vehicle sensing indicator indicates whether the vehicle sensing device senses vehicle occupancy of the associated parking location, measuring a signal quality of the intermittently received wireless signal over time, correlating the measured signal quality of the intermittently received wireless signal over time with the vehicle occupancy indictor, and identifying errors in the vehicle sensing indicator based on the correlating of the measured signal quality of the intermittently received wireless signal over time with the vehicle occupancy indictor.Type: ApplicationFiled: June 9, 2017Publication date: October 18, 2018Applicant: PNI Sensor CorporationInventors: Andrew T. Taylor, Tyler Bryant, Yuan Zou, Byron Whitlock, Joseph F. Miller
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Patent number: 9397305Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, an insulating layer and a gate electrode. The drain electrode is spaced from the source electrode. The semiconductor layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated with the source electrode, the drain electrode and the semiconductor layer by the insulating layer. The gate electrode, the source electrode, and the drain electrode comprise a plurality of first carbon nanotubes. The semiconductor layer comprises a plurality of second carbon nanotubes. A distribution density of the plurality of first carbon nanotubes is about 20 times as much as that of the plurality of second carbon nanotubes. A number of the plurality of second carbon nanotubes in 1 square micrometers is smaller than or equal to 1.Type: GrantFiled: January 31, 2016Date of Patent: July 19, 2016Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: Yuan Zou, Qun-Qing Li, Shou-Shan Fan
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Patent number: 9397306Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, an insulating layer and a gate electrode. The drain electrode is spaced from the source electrode. The semiconductor layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated with the source electrode, the drain electrode and the semiconductor layer by the insulating layer. The gate electrode, the source electrode, and the drain electrode comprise a plurality of first carbon nanotubes. The semiconductor layer comprises a plurality of second carbon nanotubes. A distribution density of the plurality of first carbon nanotubes is about 20 times as much as that of the plurality of second carbon nanotubes. A number of the plurality of second carbon nanotubes in 1 square micrometers is smaller than or equal to 1.Type: GrantFiled: January 27, 2016Date of Patent: July 19, 2016Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: Yuan Zou, Qun-Qing Li, Shou-Shan Fan
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Publication number: 20160164014Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, an insulating layer and a gate electrode. The drain electrode is spaced from the source electrode. The semiconductor layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated with the source electrode, the drain electrode and the semiconductor layer by the insulating layer. The gate electrode, the source electrode, and the drain electrode comprise a plurality of first carbon nanotubes. The semiconductor layer comprises a plurality of second carbon nanotubes. A distribution density of the plurality of first carbon nanotubes is about 20 times as much as that of the plurality of second carbon nanotubes. A number of the plurality of second carbon nanotubes in 1 square micrometers is smaller than or equal to 1.Type: ApplicationFiled: January 31, 2016Publication date: June 9, 2016Inventors: YUAN ZOU, QUN-QING LI, SHOU-SHAN FAN
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Publication number: 20160149146Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, an insulating layer and a gate electrode. The drain electrode is spaced from the source electrode. The semiconductor layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated with the source electrode, the drain electrode and the semiconductor layer by the insulating layer. The gate electrode, the source electrode, and the drain electrode comprise a plurality of first carbon nanotubes. The semiconductor layer comprises a plurality of second carbon nanotubes. A distribution density of the plurality of first carbon nanotubes is about 20 times as much as that of the plurality of second carbon nanotubes. A number of the plurality of second carbon nanotubes in 1 square micrometers is smaller than or equal to 1.Type: ApplicationFiled: January 27, 2016Publication date: May 26, 2016Inventors: YUAN ZOU, QUN-QING LI, SHOU-SHAN FAN
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Patent number: 9287381Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The insulating layer has a first surface and a second surface opposite to the first surface. The gate electrode is located on the first surface of the insulating layer. The source electrode, the drain electrode, and the semiconductor layer are located on the second surface of the insulating layer. The gate electrode, the source electrode, and the drain electrode include a first carbon nanotube layer. The semiconductor layer includes a second carbon nanotube layer. A first film resistor of the first carbon nanotube layer is smaller than or equal to 10 k? per square. A second film resistor of the second carbon nanotube layer is greater than or equal to 100 k? per square.Type: GrantFiled: December 24, 2013Date of Patent: March 15, 2016Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: Yuan Zou, Qun-Qing Li, Shou-Shan Fan
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Patent number: 9159938Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The transition layer is sandwiched between the insulating layer and the semiconductor layer. The transition layer is a silicon-oxide cross-linked polymer layer including a plurality of Si atoms. The plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer.Type: GrantFiled: August 28, 2013Date of Patent: October 13, 2015Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: Yuan Zou, Qun-Qing Li, Jun-Ku Liu, Zhen-Dong Zhu, Shou-Shan Fan
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Publication number: 20140306185Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The insulating layer has a first surface and a second surface opposite to the first surface. The gate electrode is located on the first surface of the insulating layer. The source electrode, the drain electrode, and the semiconductor layer are located on the second surface of the insulating layer. The gate electrode, the source electrode, and the drain electrode include a first carbon nanotube layer. The semiconductor layer includes a second carbon nanotube layer. A first film resistor of the first carbon nanotube layer is smaller than or equal to 10 k? per square. A second film resistor of the second carbon nanotube layer is greater than or equal to 100 k? per square.Type: ApplicationFiled: December 24, 2013Publication date: October 16, 2014Applicants: HON HAI PRECISION INDUSTRY CO., LTD., Tsinghua UniversityInventors: YUAN ZOU, QUN-QING LI, SHOU-SHAN FAN
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Publication number: 20140291614Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The transition layer is sandwiched between the insulating layer and the semiconductor layer. The transition layer is a silicon-oxide cross-linked polymer layer including a plurality of Si atoms. The plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer.Type: ApplicationFiled: August 28, 2013Publication date: October 2, 2014Applicants: HON HAI PRECISION INDUSTRY CO., LTD., Tsinghua UniversityInventors: YUAN ZOU, QUN-QING LI, JUN-KU LIU, ZHEN-DONG ZHU, SHOU-SHAN FAN
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Patent number: 8741249Abstract: A process for producing soda ash from brine waste, the process including reacting brine waste with carbon dioxide and ammonia to produce soda ash, where in at least a portion of the ammonia is regenerated from the ammonium chloride produced during the reaction, the regeneration ideally be achieved by the use of a weak base anion exchange resin.Type: GrantFiled: November 20, 2009Date of Patent: June 3, 2014Assignee: University of South AustraliaInventor: Linda Yuan Zou