Abstract: A system for measurements and calculations of a microcirculatory high-velocity blood flow includes a data acquisition module configured to select and acquire microcirculatory blood vessel image data; a storage module configured to store the acquired microcirculatory blood vessel image data; a velocity measurement module configured to measure a traveling distance and a traveling time of red blood cell (RBC), white blood cell (WBC), or plasma particles in a blood vessel sample and calculate a ratio of the traveling distance to the traveling time to obtain a blood flow velocity; and a high-velocity blood flow index module configured to determine an index level for the microcirculatory high-velocity blood flow. Specifically, an initial threshold, i.e. 1000 ?m/s, for the microcirculatory high-velocity blood flow of sepsis is proposed, which facilitates early diagnosis on sepsis. The changing process of the high-velocity blood flow shows development of the early-stage, intermediate-stage and end-stage sepsis.

Abstract: A rapid liquid phase deposition (LPD) process of coating a substrate provides improved deposition rates. The LPD process may include the following steps: incubation of acids with corresponding oxides, sulfide, or selenide for a predetermined period of time; removing the undissolved oxides, sulfide, or selenide; liquid phase deposition of the oxide, sulfide, or selenide film or coating at an elevated temperature; and removing the substrate from the growth solution. Further, the growth solution can be prepared for re-use by cooling to a desired temperature and adding extra oxides, sulfides, or selenides.

Abstract: A deposition process for coating a substrate with films of varying thickness on a substrate can be achieved. The thickness of the film deposition can be controlled by the separation between the substrate and a curtain. Different separation distances between the substrate and curtain in the same chemical bath will result in different film thicknesses depositing on the substrate.

Abstract: A deposition process for coating a substrate with films of varying thickness on a substrate can be achieve. The thickness of the film deposition can be controlled by the separation between the substrate and a curtain. Different separation distances between the substrate and curtain in the same chemical bath will result in different film thicknesses depositing on the substrate.

Abstract: A deposition process for coating a substrate with films of a different thickness on front and rear surface of a substrate can be achieve in one growth. The thickness of the film deposition can be controlled by the separation between the substrates. Different separation distances between the substrates in the same chemical bath will result in different film thicknesses on the substrate. Substrates may be arranged to have different separation distances between front and back surfaces, a V-shaped arrangement, or placed next to a curtain with varying separation distances between a substrate and the curtain.

Abstract: A deposition process for coating a substrate with films of a different thickness on front and rear surface of a substrate can be achieve in one growth. The thickness of the film deposition can be controlled by the separation between the substrates. Different separation distances between the substrates in the same chemical bath will result in different film thicknesses on the substrate. Substrates may be arranged to have different separation distances between front and back surfaces, a V-shaped arrangement, or placed next to a curtain with varying separation distances between a substrate and the curtain.

Abstract: A film deposited on substrate may originally has a high surface recombination velocity (SRV). In order to suppress the SRV and increase the minority carrier lifetime, the substrate may be treated annealing at a high temperature in gas ambient containing O2 or O2?. The substrate may also be treated annealing at a low or mild temperature in gas ambient containing H2 or H+. The process has been found to improve the passivation effect of silicon oxide thin films on a silicon substrate. Further, the process can be achieved using the same production steps normally applied to the solar cell to create its top and bottom metal contacts without additional heating cycles are required.

Abstract: A rapid liquid phase deposition (LPD) process of coating a substrate provides improved deposition rates. The LPD process may include the following steps: incubation of acids with corresponding oxides, sulfide, or selenide for a predetermined period of time; removing the undissolved oxides, sulfide, or selenide; liquid phase deposition of the oxide, sulfide, or selenide film or coating at an elevated temperature; and removing the substrate from the growth solution. Further, the growth solution can be prepared for re-use by cooling to a desired temperature and adding extra oxides, sulfides, or selenides.