Abstract: A method for reducing odor in remediation of pesticide chemical contaminated soil comprises preparing odor control sustained-release particles and evenly covering on the surface of the pesticide chemical contaminated soil according to a certain dosage; preparing odor covering base materials and mixed bacterial solution, and preparing the odor covering soil by mixing the odor covering base materials and mixed bacterial solution in proportion, and then covering the odor covering soil on the surface of the pesticide chemical contaminated soil; and inserting heating rods into the pesticide chemical contaminated soil, and heating the surface layer of the pesticide chemical contaminated soil to 30-40° C.

Abstract: The present invention relates to a molecular marker, a specific primer pair, and an identification method of the high-quality Ganoderma lucidum strain HMGIM-M624. The high-quality Ganoderma lucidum strain HMGIM-M624 was preserved in Guangdong Microbial Culture Collection Center (address: 5th Floor, No. 59 Building of No. 100 Yard, Mid. Xianlie Road, Guangzhou City) with the preservation number of GDMCC No: 60889 on Nov. 7, 2019. The molecular marker is an InDel molecular marker. The high-quality Ganoderma lucidum strain HMGIM-M624 has a base deletion of CATGCTGTA at the 246451th-246460th site of the chromosome sca34. The present invention provides reagents for detecting the molecular marker of the high-quality Ganoderma lucidum strain HMGIM-M624. The reagents can distinguish the high-quality Ganoderma lucidum strain HMGIM-M624 from the other 11 G. lucidum strains for commercial cultivation, thus specifically identifying the high-quality Ganoderma lucidum strain HMGIM-M624.

Abstract: The ReXEG1 gene for improving plant disease resistance has a nucleotide sequence as shown in SEQ ID NO. 1, and encodes a product having an amino acid sequence as shown in SEQ ID NO. 3. It has a key role in resistance of tobacco to Phytophthora pathogens. Overexpression of this gene significantly promotes the resistance of tobacco to various Phytophthora species, and is a desirable gene for enhancing the plant disease resistance. The gene is allowed to express in tobacco by genetic transformation to improve resistance to various pathogens to tobacco, thereby improving the disease resistance of crops in field.

Abstract: The ReXEG1 gene for improving plant disease resistance has a nucleotide sequence as shown in SEQ ID NO. 1, and encodes a product having an amino acid sequence as shown in SEQ ID NO. 3. It has a key role in resistance of tobacco to Phytophthora pathogens. Overexpression of this gene significantly promotes the resistance of tobacco to various Phytophthora species, and is a desirable gene for enhancing the plant disease resistance. The gene is allowed to express in tobacco by genetic transformation to improve resistance to various pathogens to tobacco, thereby improving the disease resistance of crops in field.

Abstract: A physical unit of a chip-scale nuclear magnetic resonance (NMR) gyroscope, the physical unit including: a vertical cavity surface emitting laser (VCSEL), a silicon sheet including a recess, a glass sheet, an atomic vapor chamber, a first right angle prism, a quarter-wave plate, a polarizing beam splitter, and photodetectors. The recess includes sides including reflecting mirrors. The glass sheet is disposed on the silicon sheet. The recess of the silicon sheet is in a structure of an inverted square frustum, and the reflecting mirrors are disposed on sides of the recess. The atomic vapor chamber is an enclosed region formed between the recess and the glass sheet. The atomic vapor chamber is filled with alkali metal atoms, one or a plurality of inert gas atoms, and one or a plurality of buffer gases.

Abstract: A physical unit of a chip-scale nuclear magnetic resonance (NMR) gyroscope, the physical unit including: a vertical cavity surface emitting laser (VCSEL), a silicon sheet including a recess, a glass sheet, an atomic vapor chamber, a first right angle prism, a quarter-wave plate, a polarizing beam splitter, and photodetectors. The recess includes sides including reflecting mirrors. The glass sheet is disposed on the silicon sheet. The recess of the silicon sheet is in a structure of an inverted square frustum, and the reflecting mirrors are disposed on sides of the recess. The atomic vapor chamber is an enclosed region formed between the recess and the glass sheet. The atomic vapor chamber is filled with alkali metal atoms, one or a plurality of inert gas atoms, and one or a plurality of buffer gases.