Abstract: Embodiments of this application provide a semiconductor structure and a method for forming the same. The method for forming the semiconductor structure includes: a first substrate is provided; the back surface of the first substrate is etched to form a trench; a conductive layer is formed in the trench; a first conductive column that extends into the trench is formed at a back surface of the first substrate; a device layer is formed at a front surface of the first substrate, and the device layer includes a storage array and a contact structure; and a second conductive column that penetrates through the device layer and extends into the first substrate is formed; the first conductive column is electrically connected with the second conductive column through the conductive layer.

Abstract: A method for manufacturing method semiconductor includes: providing a base; forming an annular sacrificial blocking layer in the base; forming an etched hole in the base, in which the etched hole is located at an inner side of the annular sacrificial blocking layer; and removing the annular sacrificial blocking layer to obtain an interconnecting hole, in which a width of an upper part of the interconnecting hole is greater than a width of a lower part of the interconnecting hole.

Abstract: A method for forming the semiconductor structure includes: a wafer in which a semiconductor device is formed is provided; a blind hole is formed in the wafer; a first metal material is deposited in the blind hole to form a through silicon via; and a first metal material deposited on a surface of the wafer is removed, and the surface of the wafer is planarized.

Abstract: Embodiments of this application provide a semiconductor structure and a method for forming the same. The method for forming the semiconductor structure includes: a first substrate is provided; the back surface of the first substrate is etched to form a trench; a conductive layer is formed in the trench; a first conductive column that extends into the trench is formed at a back surface of the first substrate; a device layer is formed at a front surface of the first substrate, and the device layer includes a storage array and a contact structure; and a second conductive column that penetrates through the device layer and extends into the first substrate is formed; the first conductive column is electrically connected with the second conductive column through the conductive layer.

Abstract: A semiconductor structure and a method for preparing a semiconductor structure are provided. The method includes: a composite hard mask layer is formed on an etching layer, the composite hard mask layer including a hard mask layer and an etching stop layer surrounded by the hard mask layer; a first target pattern and a first redundant pattern are formed in the composite hard mask layer; a remaining part of the etching stop layer is removed to form a second target pattern and a second redundant pattern in the hard mask layer; etching is performed by using the second target pattern and the second redundant pattern as masks to form a target structure in the etching layer and to form a redundant structure in the hard mask layer; and a remaining part of the hard mask layer is removed.

Abstract: The present application provides a semiconductor structure fabrication method, a semiconductor structure and a memory. The semiconductor structure fabrication method includes: providing a substrate, the substrate including a first surface and a second surface opposite to each other; forming a first dielectric layer on the first surface of the substrate, wherein semiconductor devices are formed in the first dielectric layer; forming first trenches extending into the substrate in the first dielectric layer; forming a first barrier layer on the first dielectric layer, the first barrier layer covering inner walls of the first trenches and a surface of the first dielectric layer; forming second trenches corresponding to the first trenches on the second surface of the substrate; and forming a second barrier layer on the substrate, the second barrier layer covering the second surface and inner walls of the second trenches.

Abstract: A semiconductor structure and a preparation method for a semiconductor structure are provided. The preparation method includes: a substrate is provided; and a first material layer and a second material layer are formed on the substrate, and thermal treatment is performed on the first material layer and the second material layer to convert the first material layer into an ohmic contact layer and convert the second material layer into an ion barrier layer.