Abstract: A crystal growth device and a crystal growth method of a silicon carbide single crystal are provided. The growth device includes a crucible portion including first and second crucible portions coaxially provided; and a heating portion including first, second, and third heating portions. A seed crystal accommodation portion is provided in the middle of a top of the first crucible portion. The second crucible portion is provided with a cavity as a raw material accommodation portion. The first crucible portion's outer diameter is smaller than the second crucible portion's. A concavity recessed towards the first crucible portion is provided in the middle of a bottom of the second crucible portion. The first, second, and third heating portions are circumferentially provided in the concavity, the second crucible portion, and outside the first crucible portion respectively. The third heating portion's inner diameter is smaller than the second crucible portion's outer diameter.

Abstract: The present application discloses a method and apparatus for synchronous growth of silicon carbide crystals in multiple crucibles comprising a chamber and an insulation layer assembly arranged close to inner walls of the chamber wherein the insulation layer assembly is used to divide the chamber into a plurality of independent growth cavities, and each of the growth cavities is provided with an independent growth assembly; wherein the independent growth assembly comprises a graphite crucible, a seed crystal tray arranged on the top of the graphite crucible and a drive assembly arranged at the bottom the crucible.