Abstract: The present disclosure relates to an OLED display panel. The OLED display panel includes a TFT array substrate, and a flat layer on the TFT array substrate. The flat layer includes a first flat layer and a second flat layer on the first flat layer. A viscosity of the first flat layer is less than a viscosity of the second flat layer. In addition, the present disclosure also relates to a manufacturing method of the OLED display panel to enhance the performance of the OLED display panel.

Abstract: The present disclosure relates to an OLED display panel. The OLED display panel includes a TFT array substrate, and a flat layer on the TFT array substrate. The flat layer includes a first flat layer and a second flat layer on the first flat layer. A viscosity of the first flat layer is less than a viscosity of the second flat layer. In addition, the present disclosure also relates to a manufacturing method of the OLED display panel to enhance the performance of the OLED display panel.

Abstract: Related to is the field of light-emitting panel manufacture, and a light-emitting panel and a method for manufacturing the same are provided, which aim to improve uniformity of light emission of an Organic Light-Emitting Diode (OLED) manufactured by Inkjet Printing (IJP). The light-emitting panel sequentially comprises an ITO substrate, a light-emitting layer, a light-shielding layer, and a cover glass. The method comprises forming a multilayer structure sequentially including an ITO substrate, a light-emitting layer, a light-shielding layer, and a cover glass. According to a size of an edge warp of a light-emitting area of the OLED, a light-shielding layer is designed at a corresponding position of the light-emitting area on the cover glass, and a position of a non-uniform edge is subjected to light-shielding processing, so that the problem of non-uniform light emission caused by the edge warp of the organic light-emitting layer is solved.

Abstract: Disclosed are an array substrate and a display device. The array substrate includes a baseplate, a buffer layer and an active layer that are arranged in sequence. The active layer includes a first active region and a second active region. A conducting channel of the first active region is made of a low temperature poly-silicon, and a conducting channel of the second active region is made of an oxide semiconductor. The display device includes the array substrate. Through selecting a low temperature poly-silicon material as a conducting channel material of the first active region and an oxide semiconductor material as a conducting channel material of the second active region, the array substrate and the display device can have a rapid switching speed and a high luminous homogeneity.

Abstract: A ultraviolet (UV) pretreatment apparatus used in vacuum evaporation includes a housing having a curing chamber disposed inside the housing; an inlet disposed at one end of the housing and an outlet disposed at an opposite end of the housing; and a UV source disposed in the curing chamber. A light absorption layer is disposed on inner walls of the curing chamber.

Abstract: This disclosure discloses an array substrate and a manufacturing method, and a display device, the array substrate including: a channel layer; a gate insulating layer including a first portion and a second portion connected side by side, arranged on the channel layer, and exposing a source and drain contact zone on the channel layer, the second portion of the gate insulating layer being located on both sides of the first portion of the gate insulating layer; a gate layer, disposed on the first portion of the gate insulating layer; and a source and a drain, correspondingly connected to the contact region of the source and drain of the channel layer respectively. The array substrate of this disclosure solves the array substrate leakage problem caused by conductorizing the channel layer due to performing ion implantation to the channel layer.

Abstract: A ultraviolet (UV) pretreatment apparatus used in vacuum evaporation includes a housing having a curing chamber disposed inside the housing; an inlet disposed at one end of the housing and an outlet disposed at an opposite end of the housing; and a UV source disposed in the curing chamber. A light absorption layer is disposed on inner walls of the curing chamber.

Abstract: This invention discloses an array substrate, a display device and a manufacturing method thereof. The array substrate includes a base substrate and a low temperature polysilicon transistor and an oxide transistor positioned on the base substrate; the low temperature polysilicon transistor includes a laminated polysilicon layer and a first insulating layer, the first insulating layer comprising a silicon oxide layer and silicon nitride layer, wherein the silicon nitride layer is positioned between the polysilicon layer and the silicon oxide layer; the oxide transistor includes a laminated oxide semiconductor layer and a second insulating layer, and the second insulating layer is free of a silicon nitride layer. By the method, the leakage problem of the low temperature polysilicon transistor is effectively reduced, and the reliability of the oxide transistor is improved.

Abstract: A thin film transistor structure is provided with a glass substrate, a buffer layer, a metal oxide semiconductor layer, and a gate metal layer. A shielding metal layer is disposed between the glass substrate and the buffer layer. A projection area of the gate metal layer on a plane of the glass substrate aligns to a projection area of the shielding metal layer on the plane, the projection area of the shielding metal layer on the plane of the glass substrate covers the projection area of the metal oxide semiconductor layer of the channel area on the plane of the glass substrate.

Abstract: A method for manufacturing a TFT substrate is disclosed. The TFT substrate includes a drive TFT region and a display TFT region. The drive TFT region and the display TFT region are manufactured with different technologies, so that different requirements for TFT can be met. The manufacturing method according to the present disclosure mainly includes: forming a first amorphous silicon layer to obtain a drive TFT region; forming a second amorphous silicon layer to obtain a display TFT region; and then depositing a passivation layer and a flat layer, so that the TFT substrate is manufactured after following treatment steps.

Abstract: The present invention provides an organic light-emitting display panel and manufacturing method thereof. The method is to use the feature that silicon nitride has more hydrogen atoms, so that the oxide semiconductor in contact with the part of oxide semiconductor pattern layer with conductor characteristics, can be continuously doped with hydrogen atoms to hold conductor characteristics, and the contact impedance between the part of oxide semiconductor pattern layer and the source and the drain can be continuously maintained at a low state to achieve the function of TFT.

Abstract: This disclosure discloses an array substrate and a manufacturing method, and a display device, the array substrate including: a channel layer; a gate insulating layer including a first portion and a second portion connected side by side, arranged on the channel layer, and exposing a source and drain contact zone on the channel layer, the second portion of the gate insulating layer being located on both sides of the first portion of the gate insulating layer; a gate layer, disposed on the first portion of the gate insulating layer; and a source and a drain, correspondingly connected to the contact region of the source and drain of the channel layer respectively. The array substrate of this disclosure solves the array substrate leakage problem caused by conductorizing the channel layer due to performing ion implantation to the channel layer.

Abstract: A method for manufacturing a TFT substrate is disclosed. The TFT substrate includes a drive TFT region and a display TFT region. The drive TFT region and the display TFT region are manufactured with different technologies, so that different requirements for TFT can be met. The manufacturing method according to the present disclosure mainly includes: forming a first amorphous silicon layer to obtain a drive TFT region; forming a second amorphous silicon layer to obtain a display TFT region; and then depositing a passivation layer and a flat layer, so that the TFT substrate is manufactured after following treatment steps.

Abstract: Related to is the field of light-emitting panel manufacture, and a light-emitting panel and a method for manufacturing the same are provided, which aim to improve uniformity of light emission of an Organic Light-Emitting Diode (OLED) manufactured by Inkjet Printing (IJP). The light-emitting panel sequentially comprises an ITO substrate, a light-emitting layer, a light-shielding layer, and a cover glass. The method comprises forming a multilayer structure sequentially including an ITO substrate, a light-emitting layer, a light-shielding layer, and a cover glass. According to a size of an edge warp of a light-emitting area of the OLED, a light-shielding layer is designed at a corresponding position of the light-emitting area on the cover glass, and a position of a non-uniform edge is subjected to light-shielding processing, so that the problem of non-uniform light emission caused by the edge warp of the organic light-emitting layer is solved.

Abstract: A manufacturing method of a thin film transistor array substrate is provided. In the method, a substrate having a display region and a sensing region is provided. At least a display thin film transistor is formed in the display region, a first sensing electrode is formed in the sensing region, and an inter-layer dielectric layer is disposed on the substrate, covers the display thin film transistor, and exposes the first sensing electrode. A patterned photo sensitive dielectric layer is then formed on the first sensing electrode. A patterned transparent conductive layer is subsequently formed on the substrate, wherein the patterned transparent conductive layer includes a pixel electrode coupled to the corresponding display thin film transistor and includes a second sensing electrode located on the patterned photo sensitive dielectric layer. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

Abstract: A manufacturing method of a thin film transistor array substrate is provided. In the method, a substrate having a display region and a sensing region is provided. At least a display thin film transistor is formed in the display region, a first sensing electrode is formed in the sensing region, and an inter-layer dielectric layer is disposed on the substrate, covers the display thin film transistor, and exposes the first sensing electrode. A patterned photo sensitive dielectric layer is then formed on the first sensing electrode. A patterned transparent conductive layer is subsequently formed on the substrate, wherein the patterned transparent conductive layer includes a pixel electrode coupled to the corresponding display thin film transistor and includes a second sensing electrode located on the patterned photo sensitive dielectric layer. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

Abstract: A manufacturing method of a thin film transistor array substrate incorporating the manufacture of a photo-sensor is provided. In the manufacturing method, a photo-sensing dielectric layer is formed between a transparent conductive layer and a metal electrode for detecting ambient light. Since the transparent conductive layer is adopted as an electrode, the ambient light can pass through the transparent conductive layer and get incident light into the photo-sensing dielectric layer. Therefore, the sensing area of the photo-sensor can be enlarged and the photo-sensing efficiency is improved. In addition, the other side of the photo sensitive dielectric layer may be a metal electrode. The metal electrode can block the backlight from getting incident into the photo-sensing dielectric layer and thus reduce the background noise. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

Abstract: A thin film transistor (TFT) including a substrate, a buffer layer, a patterned poly-silicon layer, a gate dielectric layer, and a number of gate electrodes is provided. The patterned poly-silicon layer is disposed on the buffer layer and the substrate. The patterned poly-silicon layer includes a number of channel regions, at least one heavily doped region, two lightly doped regions, a source region, and a drain region. The heavily doped region connects two adjacent channel regions. The source region connects one of the two outmost channel regions through one of the lightly doped regions. The drain region connects the other outmost channel region through the other lightly doped region. The gate dielectric layer covers the patterned poly-silicon layer. The gate electrodes are disposed on the gate dielectric layer and electrically connected to one another. Each gate is disposed above each channel region and a part of the heavily doped region.

Abstract: A manufacturing method of a thin film transistor array substrate incorporating the manufacture of a photo-sensor is provided. In the manufacturing method, a photo-sensing dielectric layer is formed between a transparent conductive layer and a metal electrode for detecting ambient light. Since the transparent conductive layer is adopted as an electrode, the ambient light can pass through the transparent conductive layer and get incident light into the photo-sensing dielectric layer. Therefore, the sensing area of the photo-sensor can be enlarged and the photo-sensing efficiency is improved. In addition, the other side of the photo sensitive dielectric layer may be a metal electrode. The metal electrode can block the backlight from getting incident into the photo-sensing dielectric layer and thus reduce the background noise. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.