Abstract: The invention belongs to the technical field of batteries, and discloses a phosphate-based flame-retardant electrolyte and a lithium-metal battery, and the phosphate-based flame-retardant electrolyte consists of a lithium salt, a phosphate solvent and a diluent. According to the invention, dimethyl (2-methoxyethoxy)methylphosphonate or diethyl (2-methoxyethoxy)methylphosphonate is used as a novel phosphate solvent, an electrolyte system with local high salt concentration is adopted, most phosphate solvent molecules are complexed with Li+ at the local high salt concentration by adjusting dosages of the lithium salt, the phosphate solvent and the diluent, so almost none of free solvent molecules exist, thus inhibiting irreversible decomposition of phosphate molecules on a surface of a li-anode, and meanwhile, the flame retardancy of the phosphate solvent greatly improves the safety of the lithium-metal battery.

Abstract: A method of forming a sealing structure for a bonded wafer is provided. The method includes providing the lower wafer and the upper wafer, forming a sealing material layer on each of the lower wafer and the upper wafer, forming a mask layer on the sealing material layer on each of the lower wafer and the upper wafer, etching the sealing material layer using the mask layer as an etch mask, so as to form a first protrusion at an edge of the lower wafer and a second protrusion at an edge of the upper wafer, and bonding the first protrusion and the second protrusion together to form the sealing structure. The sealing structure encloses a gap between the lower wafer and the upper wafer at an edge of the bonded wafer, so as to form a hermetically sealed cavity at the edge of the bonded wafer.

Abstract: A method of forming a sealing structure for a bonded wafer is provided. The method includes providing the lower wafer and the upper wafer, forming a sealing material layer on each of the lower wafer and the upper wafer, forming a mask layer on the sealing material layer on each of the lower wafer and the upper wafer, etching the sealing material layer using the mask layer as an etch mask, so as to form a first protrusion at an edge of the lower wafer and a second protrusion at an edge of the upper wafer, and bonding the first protrusion and the second protrusion together to form the sealing structure. The sealing structure encloses a gap between the lower wafer and the upper wafer at an edge of the bonded wafer, so as to form a hermetically sealed cavity at the edge of the bonded wafer.

Abstract: A method of forming a sealing structure for a bonded wafer is provided. The method includes providing the lower wafer and the upper wafer, forming a sealing material layer on each of the lower wafer and the upper wafer, forming a mask layer on the sealing material layer on each of the lower wafer and the upper wafer, etching the sealing material layer using the mask layer as an etch mask, so as to form a first protrusion at an edge of the lower wafer and a second protrusion at an edge of the upper wafer, and bonding the first protrusion and the second protrusion together to form the sealing structure. The sealing structure encloses a gap between the lower wafer and the upper wafer at an edge of the bonded wafer, so as to form a hermetically sealed cavity at the edge of the bonded wafer.

Abstract: A method of forming a sealing structure for a bonded wafer is provided. The method includes providing the lower wafer and the upper wafer, forming a sealing material layer on each of the lower wafer and the upper wafer, forming a mask layer on the sealing material layer on each of the lower wafer and the upper wafer, etching the sealing material layer using the mask layer as an etch mask, so as to form a first protrusion at an edge of the lower wafer and a second protrusion at an edge of the upper wafer, and bonding the first protrusion and the second protrusion together to form the sealing structure. The sealing structure encloses a gap between the lower wafer and the upper wafer at an edge of the bonded wafer, so as to form a hermetically sealed cavity at the edge of the bonded wafer.