Patents by Inventor Yuankun HOU

Yuankun HOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sealing structure for a bonded wafer and method of forming the sealing structure
    Patent number: 9837287
    Abstract: A method of forming a sealing structure for a bonded wafer is provided. The method includes providing the lower wafer and the upper wafer, forming a sealing material layer on each of the lower wafer and the upper wafer, forming a mask layer on the sealing material layer on each of the lower wafer and the upper wafer, etching the sealing material layer using the mask layer as an etch mask, so as to form a first protrusion at an edge of the lower wafer and a second protrusion at an edge of the upper wafer, and bonding the first protrusion and the second protrusion together to form the sealing structure. The sealing structure encloses a gap between the lower wafer and the upper wafer at an edge of the bonded wafer, so as to form a hermetically sealed cavity at the edge of the bonded wafer.
    Type: Grant
    Filed: April 7, 2017
    Date of Patent: December 5, 2017
    Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Yuankun Hou, Kuanchieh Yu, Yu Hua, Yuelin Zhao
  • SEALING STRUCTURE FOR A BONDED WAFER AND METHOD OF FORMING THE SEALING STRUCTURE
    Publication number: 20170213746
    Abstract: A method of forming a sealing structure for a bonded wafer is provided. The method includes providing the lower wafer and the upper wafer, forming a sealing material layer on each of the lower wafer and the upper wafer, forming a mask layer on the sealing material layer on each of the lower wafer and the upper wafer, etching the sealing material layer using the mask layer as an etch mask, so as to form a first protrusion at an edge of the lower wafer and a second protrusion at an edge of the upper wafer, and bonding the first protrusion and the second protrusion together to form the sealing structure. The sealing structure encloses a gap between the lower wafer and the upper wafer at an edge of the bonded wafer, so as to form a hermetically sealed cavity at the edge of the bonded wafer.
    Type: Application
    Filed: April 7, 2017
    Publication date: July 27, 2017
    Inventors: Yuankun HOU, Kuanchieh YU, Yu HUA, Yuelin ZHAO
  • Sealing structure for a bonded wafer and method of forming the sealing structure
    Patent number: 9653312
    Abstract: A method of forming a sealing structure for a bonded wafer is provided. The method includes providing the lower wafer and the upper wafer, forming a sealing material layer on each of the lower wafer and the upper wafer, forming a mask layer on the sealing material layer on each of the lower wafer and the upper wafer, etching the sealing material layer using the mask layer as an etch mask, so as to form a first protrusion at an edge of the lower wafer and a second protrusion at an edge of the upper wafer, and bonding the first protrusion and the second protrusion together to form the sealing structure. The sealing structure encloses a gap between the lower wafer and the upper wafer at an edge of the bonded wafer, so as to form a hermetically sealed cavity at the edge of the bonded wafer.
    Type: Grant
    Filed: December 3, 2014
    Date of Patent: May 16, 2017
    Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Yuankun Hou, Kuanchieh Yu, Yu Hua, Yuelin Zhao
  • SEALING STRUCTURE FOR A BONDED WAFER AND METHOD OF FORMING THE SEALING STRUCTURE
    Publication number: 20150235918
    Abstract: A method of forming a sealing structure for a bonded wafer is provided. The method includes providing the lower wafer and the upper wafer, forming a sealing material layer on each of the lower wafer and the upper wafer, forming a mask layer on the sealing material layer on each of the lower wafer and the upper wafer, etching the sealing material layer using the mask layer as an etch mask, so as to form a first protrusion at an edge of the lower wafer and a second protrusion at an edge of the upper wafer, and bonding the first protrusion and the second protrusion together to form the sealing structure. The sealing structure encloses a gap between the lower wafer and the upper wafer at an edge of the bonded wafer, so as to form a hermetically sealed cavity at the edge of the bonded wafer.
    Type: Application
    Filed: December 3, 2014
    Publication date: August 20, 2015
    Inventors: Yuankun HOU, Kuanchieh YU, Yu HUA, Yuelin ZHAO