Abstract: The present disclosure relates to a mechanical stretching device for a movable seat unit, and a movable seat unit thereof. The mechanical stretching device includes: a linkage support that comprises a support structure configured to support the mechanical stretching device on ground and a linkage structure attachable to a seating portion of the seat unit; a back mechanism that is pivotally connected to the linkage support and is configured to attach to a backrest of the seat unit; and a leg stretching structure including a footrest element, and the leg stretching structure is pivotally connected to the linkage support, and the footrest element is attached to a footrest of the seat unit. The mechanical stretching device is configured to implement a sequential conversion or a reverse sequential conversion of the seat unit from a sitting state to a relaxing state and to a lying state.

Abstract: A GaN-based superjunction vertical power transistor and a manufacturing method thereof. The transistor includes: a N?-GaN layer; a first P-GaN layer as a current blocking layer, formed on the N?-GaN layer and having a gate region window; and a thin barrier Al(In, Ga)N/GaN heterostructure conformally formed on the current blocking layer and filling the bottom and one or more sidewalls of the gate region window, wherein the N?-GaN layer has an etched groove completely or partially filled with a second P-type GaN layer, an N+-GaN layer is formed under the second P-type GaN layer, and the N+-GaN layer is in direct contact with the second P-type GaN layer and the N?-GaN layer to form a superjunction composite structure.

Abstract: A GaN-based superjunction vertical power transistor and a manufacturing method thereof. The transistor includes: a N?-GaN layer; a first P-GaN layer as a current blocking layer, formed on the N?-GaN layer and having a gate region window; and a thin barrier Al(In, Ga)N/GaN heterostructure conformally formed on the current blocking layer and filling the bottom and one or more sidewalls of the gate region window, wherein the N?-GaN layer has an etched groove completely or partially filled with a second P-type GaN layer, an N+-GaN layer is formed under the second P-type GaN layer, and the N+-GaN layer is in direct contact with the second P-type GaN layer and the N?-GaN layer to form a superjunction composite structure.