Abstract: The invention belongs to the technical field of batteries, and discloses a phosphate-based flame-retardant electrolyte and a lithium-metal battery, and the phosphate-based flame-retardant electrolyte consists of a lithium salt, a phosphate solvent and a diluent. According to the invention, dimethyl (2-methoxyethoxy)methylphosphonate or diethyl (2-methoxyethoxy)methylphosphonate is used as a novel phosphate solvent, an electrolyte system with local high salt concentration is adopted, most phosphate solvent molecules are complexed with Li+ at the local high salt concentration by adjusting dosages of the lithium salt, the phosphate solvent and the diluent, so almost none of free solvent molecules exist, thus inhibiting irreversible decomposition of phosphate molecules on a surface of a li-anode, and meanwhile, the flame retardancy of the phosphate solvent greatly improves the safety of the lithium-metal battery.

Abstract: The invention belongs to the technical field of batteries, and discloses a phosphate-based flame-retardant electrolyte and a lithium-metal battery, and the phosphate-based flame-retardant electrolyte consists of a lithium salt, a phosphate solvent and a diluent. According to the invention, dimethyl (2-methoxyethoxy)methylphosphonate or diethyl (2-methoxyethoxy)methylphosphonate is used as a novel phosphate solvent, an electrolyte system with local high salt concentration is adopted, most phosphate solvent molecules are complexed with Li at the local high salt concentration by adjusting dosages of the lithium salt, the phosphate solvent and the diluent, so almost none of free solvent molecules exist, thus inhibiting irreversible decomposition of phosphate molecules on a surface of a l i-anode, and meanwhile, the flame retardancy of the phosphate solvent greatly improves the safety of the lithium-metal battery.

Abstract: A GaN-based superjunction vertical power transistor and a manufacturing method thereof. The transistor includes: a N?-GaN layer; a first P-GaN layer as a current blocking layer, formed on the N?-GaN layer and having a gate region window; and a thin barrier Al(In, Ga)N/GaN heterostructure conformally formed on the current blocking layer and filling the bottom and one or more sidewalls of the gate region window, wherein the N?-GaN layer has an etched groove completely or partially filled with a second P-type GaN layer, an N+-GaN layer is formed under the second P-type GaN layer, and the N+-GaN layer is in direct contact with the second P-type GaN layer and the N?-GaN layer to form a superjunction composite structure.

Abstract: A GaN-based superjunction vertical power transistor and a manufacturing method thereof. The transistor includes: a N?-GaN layer; a first P-GaN layer as a current blocking layer, formed on the N?-GaN layer and having a gate region window; and a thin barrier Al(In, Ga)N/GaN heterostructure conformally formed on the current blocking layer and filling the bottom and one or more sidewalls of the gate region window, wherein the N?-GaN layer has an etched groove completely or partially filled with a second P-type GaN layer, an N+-GaN layer is formed under the second P-type GaN layer, and the N+-GaN layer is in direct contact with the second P-type GaN layer and the N?-GaN layer to form a superjunction composite structure.