Abstract: A cache management method, a solid state drive controller, and a solid state drive are provided. The solid state drive comprises a cache space, and the cache space comprises a dirty data block linked list. The method comprises: obtaining a write command and generating a first dirty data block used to record data information of the write command; and if the first dirty data block conflicts in address range with a second dirty data block in the dirty data block linked list, marking data in the conflicting region of the second dirty data block as invalid and inserting the first dirty data block into the dirty data block linked list.

Abstract: The present application provides a thin film transistor and a manufacturing method thereof. A substrate, an active layer, a first insulating layer, and a gate electrode are stacked and disposed in sequence, the second insulating layer is disposed on the substrate and covers the active layer, the first insulating layer, and the gate electrode. A source electrode and a drain electrode are separately disposed on a side of the second insulating layer away from the gate electrode, and any one of a projection of the source electrode on the active layer or a projection of the drain electrode on the active layer does not coincide with a projection of the gate electrode on the active layer. Thereby, a parasitic capacitance of the gate electrode and the source electrode can be reduced, and a parasitic capacitance of the gate electrode and the drain electrode can be reduced.

Abstract: A display panel includes a substrate, a first metal layer, and a first insulating layer, an oxide semiconductor layer, a second insulating layer, a second metal layer, a third insulating layer, and a third metal layer stacked on each other sequentially. The first insulating layer includes a first region and a second region adjacent to the first region, and a thickness of the second region is less than a thickness of the first region. A projection of at least a portion of the oxide semiconductor layer projected on the substrate overlaps with a projection of the first metal layer projected on the substrate. The third metal layer is connected to the first metal layer through a third via hole, and the third via hole is extended through the first insulating layer and the third insulating layer.

Abstract: The present application provides a display panel and a display device. The display panel comprises a substrate and a thin film transistor layer disposed on the substrate, wherein the thin film transistor layer comprises an active layer and a metal layer that are stacked, and the active layer comprises an active segment and a conductor segment connected to the active segment; and wherein the conductor segment comprises a lap portion connected to the metal layer and a conductor sub-segment between the lap portion and the active segment, and a groove is formed in the conductor sub-segment.

Abstract: The present application provides a display panel, a manufacturing method thereof, and a display device; first intervals and second intervals are defined between a plurality of first electrodes, a plurality of first pixel banks are arranged corresponding to the first intervals, and a plurality of second pixel banks are arranged corresponding to the second intervals, wherein the second pixel banks cross over the first pixel banks, and a thickness of the second pixel banks is greater than a thickness of the first pixel banks, so that light-emitting materials of a same color can be continuously printed between adjacent ones of the second pixel banks.

Abstract: A display panel and an electronic device are disclosed. The display panel includes a metal oxide semiconductor layer disposed on a substrate. Part of a gate insulating layer is disposed on the metal oxide semiconductor layer. Part of a first metal layer is disposed on the gate insulating layer. The first metal layer includes a gate electrode. A protection layer is disposed on the gate electrode, the gate insulating layer, and the metal oxide semiconductor layer, and the protection layer is made of a metal oxide.