Abstract: A device includes a substrate and a heterostructure supported by the substrate. The heterostructure includes a set of quantum dot structures, each quantum dot structure of the set of quantum dot structures including a semiconductor material, and a layered material disposed between the set of quantum dot structures and the substrate. The layered material includes a plurality of monolayers such that adjacent monolayers of the plurality of monolayers are bonded to one another via van der Waals forces, and the semiconductor material of each quantum dot structure of the set of quantum dot structures exhibits bonding via van der Waals forces.

Abstract: In accordance with aspects of the present technology, a unique charge carrier transfer process from c-plane InGaN to semipolar-plane InGaN formed spontaneously in nanowire heterostructures can effectively reduce the instantaneous charge carrier density in the active region, thereby leading to significantly enhanced emission efficiency in the deep red wavelength. Furthermore, the total built-in electric field can be reduced to a few kV/cm by cancelling the piezoelectric polarization with spontaneous polarization in strain-relaxed high indium composition InGaN/GaN heterostructures. An ultra-stable red emission color can be achieved in InGaN over four orders of magnitude of excitation power range. Accordingly, aspects of the present technology advantageously provide a method for addressing some of the fundamental issues in light-emitting devices and advantageously enables the design of high efficiency and high stability optoelectronic devices.

Abstract: Monolithic integration of multicolor light-emitting diodes with highly spatially uniform emission wavelength are realized in a single selective area epitaxy process. Pronounced emission peaks with very narrow spectral linewidths are also achieved. The indium contents and emission colors are tuned by precisely controlling the nanowire emitter diameter and lattice constant. The emission wavelengths exhibit small variations of only a few nanometers among individual nanowire emitters over an areal region.

Abstract: Systems and methods presented herein include efficient and effective Light Emitting Devices (LED) devices. In one embodiment, a light emitting device comprises: a substrate comprising silicon; a first portion comprising a group III-V compound component with a first type of doping; a second portion comprising an active region, a shell comprising a gradient configuration with piezoelectric field compensation characteristics; and a third portion comprising a group III-V compound component with a second type of doping, The silicon substrate is coupled to the first portion. The first portion and shell are coupled to the second portion with is in turn coupled to the third portion. The active region comprises a quantum core structure with strain compensation barriers and polarization doping. The strain compensated barriers form multiple quantum wells. In one embodiment, the strain compensation barriers include AlGaN in a configuration that compensates tensile strain within the active region.

Abstract: Nanowire light emitting diodes (LEDs) are operable for spontaneous emission of light at significantly reduced current densities and with very narrow linewidths relative to conventional LEDs.

Abstract: A device includes a substrate, and a plurality of structures supported by the substrate, each structure of the plurality of structures including a Group III-nitride base, first and second Group III-nitride charge carrier injection layers supported by the Group III-nitride base, and a quantum heterostmcture disposed between the first and second charge carrier injection layers. The quantum hetero structure includes a pair of Group III-nitride barrier layers, and a Group III-nitride active layer disposed between the pair of Group III-nitride barrier layers. The Group III-nitride active layer has a thickness for quantum confinement of charge carriers. At least one of the pair of Group III-nitride barrier layers has a nitride surface adjacent to the Group III-nitride active layer.

Abstract: In various embodiments, the present disclosure includes a nitrogen-polar (N-polar) nanowire that includes an indium gallium nitride (InGaN) quantum well formed by selective area growth. It is noted that the N-polar nanowire is operable for emitting light.

Abstract: This disclosure is directed to a system and a method for providing enhanced real-time or near-real-time response to request for detached data analytics services. In one implementation, a system is disclosed for predicting a data analytics service that may be requested by a user based on real-time user interactive operations, and for pre-loading/pre-configuring a pipeline of data analytics components for performing the predicted data analytics service before an actual request is made. Additionally, at least some intermediate data may be calculated by the pre-configured pipeline and may be pre-cached in memory. Upon actual user request for the data analytics service, only data analytics that require additional input data concurrently provided with the request would need to be performed. In such a manner, user-perceived delay in completing the detached data analytics service is reduced.