Abstract: Systems and methods presented herein include efficient and effective Light Emitting Devices (LED) devices. In one embodiment, a light emitting device comprises: a substrate comprising silicon; a first portion comprising a group III-V compound component with a first type of doping; a second portion comprising an active region, a shell comprising a gradient configuration with piezoelectric field compensation characteristics; and a third portion comprising a group III-V compound component with a second type of doping, The silicon substrate is coupled to the first portion. The first portion and shell are coupled to the second portion with is in turn coupled to the third portion. The active region comprises a quantum core structure with strain compensation barriers and polarization doping. The strain compensated barriers form multiple quantum wells. In one embodiment, the strain compensation barriers include AlGaN in a configuration that compensates tensile strain within the active region.

Abstract: Nanowire light emitting diodes (LEDs) are operable for spontaneous emission of light at significantly reduced current densities and with very narrow linewidths relative to conventional LEDs.

Abstract: A device includes a substrate, and a plurality of structures supported by the substrate, each structure of the plurality of structures including a Group III-nitride base, first and second Group III-nitride charge carrier injection layers supported by the Group III-nitride base, and a quantum heterostmcture disposed between the first and second charge carrier injection layers. The quantum hetero structure includes a pair of Group III-nitride barrier layers, and a Group III-nitride active layer disposed between the pair of Group III-nitride barrier layers. The Group III-nitride active layer has a thickness for quantum confinement of charge carriers. At least one of the pair of Group III-nitride barrier layers has a nitride surface adjacent to the Group III-nitride active layer.

Abstract: In various embodiments, the present disclosure includes a nitrogen-polar (N-polar) nanowire that includes an indium gallium nitride (InGaN) quantum well formed by selective area growth. It is noted that the N-polar nanowire is operable for emitting light.

Abstract: This disclosure is directed to a system and a method for providing enhanced real-time or near-real-time response to request for detached data analytics services. In one implementation, a system is disclosed for predicting a data analytics service that may be requested by a user based on real-time user interactive operations, and for pre-loading/pre-configuring a pipeline of data analytics components for performing the predicted data analytics service before an actual request is made. Additionally, at least some intermediate data may be calculated by the pre-configured pipeline and may be pre-cached in memory. Upon actual user request for the data analytics service, only data analytics that require additional input data concurrently provided with the request would need to be performed. In such a manner, user-perceived delay in completing the detached data analytics service is reduced.