Abstract: The invention discloses (110) dislocation-free monocrystalline silicon and its preparation and the graphite heating system used. The process for preparation is as follows: clearing furnace and tidy the heat field; loading furnace; vacuumizing and argon charging; heating raw material; crystal seeding; expanding shoulder; rotating shoulder: speeding up the speed of shoulder-expanding; equal diameter: after shoulder-rotating, stabilize the crystal growth speed; finishing: turning off the power of crucible, decreasing the drawing rate manually; turning off the furnace. The graphite heating system includes: upper insulation column, lower insulation column and hearth tray arranged from the top down to form the external shell, and the peripheral surface is a stepped structure, and the thickness of the insulation layer of the upper insulation column is 20-30 mm, the thickness of the insulation layer of the lower insulation column is 60-70 mm, and the thickness of the insulation layer of the hearth tray is 70-80 mm.