Patents by Inventor Yuansheng Ma
Yuansheng Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230229845Abstract: A computing system may include a hotspot processing engine and a hotspot prediction engine. The hotspot processing engine may be configured to access an input data set of hotspot locations on manufactured circuits of a circuit design, correlate the hotspot locations to layout data for the circuit design, and extract fragment feature vectors for the hotspot locations. The hotspot processing engine may further be configured to process the fragment feature vectors such that hotspot fragment feature vectors are a threshold percentage of the total number of feature vectors in the fragment feature vectors and provide the processed fragment feature vectors as a training set for training a machine-learning model. The hotspot prediction engine may be configured to apply the machine-learning model to characterize locations of the circuit design as a hotspot location or a non-hotspot location.Type: ApplicationFiled: July 8, 2020Publication date: July 20, 2023Applicant: Siemens Industry Software Inc.Inventors: Yuansheng Ma, Le Hong
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Publication number: 20230214562Abstract: A computing system may include a hyperspace generation engine and a hyperspace processing engine. The hyperspace generation engine may be configured to access a feature vector set, and feature vectors in the feature vector set may represent values for multiple parameters of data points in a dataset. The hyperspace generation engine may further be configured to perform a principal component analysis on the feature vector set and quantize the principal component space into a hyperspace comprised of hyperboxes. The hyperspace processing engine may be configured to process the dataset according to a mapping of the feature vector set into the hyperboxes of the hyperspace.Type: ApplicationFiled: July 8, 2020Publication date: July 6, 2023Applicant: Siemens Industry Software Inc.Inventors: Yuansheng Ma, Le Hong
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Publication number: 20230159694Abstract: The present disclosure discloses a waterborne epoxy resin for an anti-corrosion coating, and a preparation method and use thereof. In the preparation method, a strongly-hydrophilic polyethylene glycol (PEG) branch is introduced into a molecular chain of epoxy resin to realize the self-emulsification function of epoxy resin. Moreover, due to the short molecular chain, a solid content can reach up to 66.7% under the action of PEG. In addition, the waterborne emulsion can be prepared without adding any additional alcohol-soluble solvents and other high-boiling-point organic solvents, and a production process and a product use process both are very environmentally friendly. The waterborne epoxy resin can be mixed with a waterborne ammonia curing agent to form a film for corrosion protection.Type: ApplicationFiled: September 17, 2021Publication date: May 25, 2023Inventors: Changlong Yang, Mingjie Ju, Bo Hu, Shuwen Zheng, Yuansheng Ma, Yang Zheng, Dazhong Wang, Junlong Duo, Rongzhen Xia
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Publication number: 20230095028Abstract: Various aspects of the present disclosed technology relate to techniques for inverse-lithography-technology-based optical proximity correction. A layout design is received. A machine learning-based clustering process is then performed to separate layout features in the layout design into groups of layout features. For layout features in each of the groups of layout features, preliminary corrections are determined. The determination may be based on inverse lithography technology. The preliminary corrections are applied to the layout design to generate a pre-processed layout design. An inverse lithography technology process is performed on the pre-processed layout design to generate a processed layout design. Masks can be manufactured based on the processed layout design.Type: ApplicationFiled: August 31, 2022Publication date: March 30, 2023Inventors: Yuansheng Ma, Le Hong, Rui Wu, Junjiang Lei
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Patent number: 10311165Abstract: Aspects of the disclosed technology relate to techniques of generating guiding patterns for via-type features. An initial guiding pattern characterized by a plurality of guiding pattern parameters is constructed for two or more via-type features in a layout design based on target values of location and size parameters for the two or more via-type features. Predicted values of the location and size parameters are then extracted from the initial guiding pattern based on simulations or correlation information between the plurality of guiding pattern parameters and the location and size parameters. Based on the predicted values of the location and size parameters, the target values of location and size parameters and the correlation information, a modified guiding pattern is determined by adjusting one or more parameters of the plurality of guiding pattern parameters. The extraction and determination operations may be iterated.Type: GrantFiled: March 30, 2016Date of Patent: June 4, 2019Assignee: Mentor Graphics CorporationInventors: Junjiang Lei, Le Hong, Yuansheng Ma
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Patent number: 9836556Abstract: Aspects of the disclosed technology relate to techniques of optical proximity correction for directed self-assembly guiding patterns. An initial mask pattern for photomask fabrication is first generated by performing a plurality of conventional optical proximity correction iterations. Predicted print errors for two or more via-type features are then determined based on a predicted guiding pattern for the two or more via-type features, a target guiding pattern for the two or more via-type features, and correlation information between a plurality of guiding pattern parameters and location and size parameters for the two or more via-type features. Here the predicted guiding pattern is derived based on the initial mask pattern. Based on the predicted print errors and the correlation information, the initial mask pattern is adjusted to generate a new mask pattern.Type: GrantFiled: March 30, 2016Date of Patent: December 5, 2017Assignee: Mentor Graphics CorporationInventors: Junjiang Lei, Le Hong, Yuansheng Ma
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Publication number: 20160292348Abstract: Aspects of the disclosed technology relate to techniques of optical proximity correction for directed self-assembly guiding patterns. An initial mask pattern for photomask fabrication is first generated by performing a plurality of conventional optical proximity correction iterations. Predicted print errors for two or more via-type features are then determined based on a predicted guiding pattern for the two or more via-type features, a target guiding pattern for the two or more via-type features, and correlation information between a plurality of guiding pattern parameters and location and size parameters for the two or more via-type features. Here the predicted guiding pattern is derived based on the initial mask pattern. Based on the predicted print errors and the correlation information, the initial mask pattern is adjusted to generate a new mask pattern.Type: ApplicationFiled: March 30, 2016Publication date: October 6, 2016Inventors: Junjiang Lei, Le Hong, Yuansheng Ma
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Publication number: 20160292309Abstract: Aspects of the disclosed technology relate to techniques of generating guiding patterns for via-type features. An initial guiding pattern characterized by a plurality of guiding pattern parameters is constructed for two or more via-type features in a layout design based on target values of location and size parameters for the two or more via-type features. Predicted values of the location and size parameters are then extracted from the initial guiding pattern based on simulations or correlation information between the plurality of guiding pattern parameters and the location and size parameters. Based on the predicted values of the location and size parameters, the target values of location and size parameters and the correlation information, a modified guiding pattern is determined by adjusting one or more parameters of the plurality of guiding pattern parameters. The extraction and determination operations may be iterated.Type: ApplicationFiled: March 30, 2016Publication date: October 6, 2016Inventors: Junjiang Lei, Le Hong, Yuansheng Ma
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Patent number: 9330228Abstract: Aspects of the disclosed technology relate to techniques of generating guiding patterns for via-type feature groups. A guiding pattern is constructed based on seeding positions for a via-type feature group. The initial seeding positions are derived from targeted locations of via-type features in the via-type feature group. A potential energy function is then determined for the guiding pattern. Based on the potential energy function, simulated locations of the via-type features are computed. The seeding positions are compared with the targeted locations and may be adjusted based on differences between the simulated locations and the targeted locations. The above operations may be repeated until one of one or more termination conditions are met.Type: GrantFiled: April 22, 2015Date of Patent: May 3, 2016Assignee: Mentor Graphics CorporationInventors: Juan Andres Torres Robles, Joydeep Mitra, Yuansheng Ma, Krasnova Polina Andreevna, Yuri Granik
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Patent number: 9159724Abstract: An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a gate cut region across the first gate structure, the second gate structure, or a combination thereof; providing a first gate contact over the first gate structure; providing a second gate contact over the second gate structure; and providing a diffusion contact structure coupling the first gate contact to the second gate contact, the diffusion contact structure having vertices within the gate cut region.Type: GrantFiled: January 22, 2014Date of Patent: October 13, 2015Assignee: GLOBALFOUNDRIES INC.Inventors: Yan Wang, Yuansheng Ma, Jongwook Kye, Mahbub Rashed
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Patent number: 9142513Abstract: An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions.Type: GrantFiled: March 12, 2015Date of Patent: September 22, 2015Assignee: GLOBALFOUNDRIES INC.Inventors: Mahbub Rashed, Yuansheng Ma, Irene Lin, Jason Stephens, Yunfei Deng, Yuan Lei, Jongwook K E, Roderick Augur, Shibly Ahmed, Subramani Kengeri, Suresh Venkatesan
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Publication number: 20150227676Abstract: Aspects of the disclosed technology relate to techniques of generating guiding patterns for via-type feature groups. A guiding pattern is constructed based on seeding positions for a via-type feature group. The initial seeding positions are derived from targeted locations of via-type features in the via-type feature group. A potential energy function is then determined for the guiding pattern. Based on the potential energy function, simulated locations of the via-type features are computed. The seeding positions are compared with the targeted locations and may be adjusted based on differences between the simulated locations and the targeted locations. The above operations may be repeated until one of one or more termination conditions are met.Type: ApplicationFiled: April 22, 2015Publication date: August 13, 2015Inventors: Juan Andres Torres Robles, Joydeep Mitra, Yuansheng Ma, Krasnova Polina Andreevna, Yuri Granik
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Publication number: 20150187702Abstract: An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions.Type: ApplicationFiled: March 12, 2015Publication date: July 2, 2015Inventors: Mahbub RASHED, Yuansheng MA, Irene LIN, Jason STEPHENS, Yunfei DENG, Lei YUAN, Jongwook KYE, Rod AUGUR, Shibly AHMED, Subramani KENGERI, Suresh VENKATESAN
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Patent number: 9006100Abstract: An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions.Type: GrantFiled: August 7, 2012Date of Patent: April 14, 2015Assignee: GLOBALFOUNDRIES Inc.Inventors: Mahbub Rashed, Yuansheng Ma, Irene Lin, Jason Stephens, Yunfei Deng, Yuan Lei, Jongwook Kye, Rod Augur, Shibly Ahmed, Subramani Kengeri, Suresh Venkatesan
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Patent number: 8741763Abstract: An approach for providing layout designs with via routing structures is disclosed. Embodiments include: providing a gate structure and a diffusion contact on a substrate; providing a gate contact on the gate structure; providing a metal routing structure that does not overlie a portion of the gate contact, the diffusion contact, or a combination thereof; and providing a via routing structure over the portion and under a part of the metal routing structure to couple the gate contact, the diffusion contact, or a combination thereof to the metal routing structure.Type: GrantFiled: May 7, 2012Date of Patent: June 3, 2014Assignee: GLOBALFOUNDRIES Inc.Inventors: Yuansheng Ma, Jongwook Kye, Harry Levinson, Hidekazu Yoshida, Mahbub Rashed
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Publication number: 20140131816Abstract: An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a gate cut region across the first gate structure, the second gate structure, or a combination thereof; providing a first gate contact over the first gate structure; providing a second gate contact over the second gate structure; and providing a diffusion contact structure coupling the first gate contact to the second gate contact, the diffusion contact structure having vertices within the gate cut region.Type: ApplicationFiled: January 22, 2014Publication date: May 15, 2014Applicant: GLOBALFOUNDERS Inc.Inventors: Yan WANG, Yuansheng MA, Jongwook KYE, Mahbub RASHED
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Patent number: 8679911Abstract: An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a gate cut region across the first gate structure, the second gate structure, or a combination thereof; providing a first gate contact over the first gate structure; providing a second gate contact over the second gate structure; and providing a diffusion contact structure coupling the first gate contact to the second gate contact, the diffusion contact structure having vertices within the gate cut region.Type: GrantFiled: May 7, 2012Date of Patent: March 25, 2014Assignee: GlobalFoundries Inc.Inventors: Yan Wang, Yuansheng Ma, Jongwook Kye, Mahbub Rashed
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Publication number: 20140042641Abstract: An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions.Type: ApplicationFiled: August 7, 2012Publication date: February 13, 2014Applicant: GLOBALFOUNDRIES INC.Inventors: Mahbub Rashed, Yuansheng Ma, Irene Lin, Jason Stephens, Yunfei Deng, Yuan Lei, Jongwook Kye, Rod Augur, Shibly Ahmed, Subramani Kengeri, Suresh Venkatesan
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Patent number: 8598633Abstract: A semiconductor device includes a semiconductor substrate having a diffusion region. A transistor is formed within the diffusion region. A power rail is disposed outside the diffusion region. A contact layer is disposed above the substrate and below the power rail. A via is disposed between the contact layer and the power rail to electrically connect the contact layer to the power rail. The contact layer includes a first length disposed outside the diffusion region and a second length extending from the first length into the diffusion region and electrically connected to the transistor.Type: GrantFiled: January 16, 2012Date of Patent: December 3, 2013Assignee: GLOBALFOUNDRIES, Inc.Inventors: Marc Tarabbia, James B. Gullette, Mahbub Rashed, David S. Doman, Irene Y. Lin, Ingolf Lorenz, Larry Ho, Chinh Nguyen, Jeff Kim, Jongwook Kye, Yuansheng Ma, Yunfei Deng, Rod Augur, Seung-Hyun Rhee, Jason E. Stephens, Scott Johnson, Subramani Kengeri, Suresh Venkatesan
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Patent number: 8581348Abstract: A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate with a first transistor and a second transistor formed on the semiconductor substrate. Each of the transistors includes a source, a drain, and a gate. A CA layer is electrically connected to at least one of the source or the drain of the first transistor. A CB layer is electrically connected to at least one of the gates of the transistors and the CA layer.Type: GrantFiled: December 13, 2011Date of Patent: November 12, 2013Assignee: GLOBALFOUNDRIES, Inc.Inventors: Mahbub Rashed, Steven Soss, Jongwook Kye, Irene Y. Lin, James Benjamin Gullette, Chinh Nguyen, Jeff Kim, Marc Tarabbia, Yuansheng Ma, Yunfei Deng, Rod Augur, Seung-Hyun Rhee, Scott Johnson, Subramani Kengeri, Suresh Venkatesan