Abstract: Disclosed are techniques, devices and computer products in which a processor is operable to access blood glucose measurement values and insulin data from a data warehouse memory. Based on the blood glucose measurement values the processor may be operable to identify high events that exceed an upper target blood glucose set point and low events in which blood glucose measurement values are below a lower target blood glucose set point. Rules may be applied to the high events and low events. Based on a result of the rules, high event patterns may be identified as well as a low event pattern. A respective pattern weight may be applied to each identified high event and each identified low and a graphical user interface may be populated with a number of high event patterns and for a number of low event patterns.

Abstract: An ultraviolet sterilization device includes a liquid passing pipe assembly and an ultraviolet light source. The liquid passing pipe assembly includes a shell and a transparent hollow pipe, the shell is sleeved on the hollow pipe, the shell is provided with an accommodating groove. The ultraviolet light source is provided in the accommodating groove. An end of the hollow pipe is configured as a liquid inlet end, and another end thereof is configured as a liquid outlet end, and the hollow pipe is used for circulating liquid. The wall surface of the hollow pipe is covered with a reflective film, the reflective film is provided with first light transmitting holes at the position corresponding to the ultraviolet light source. The first light transmitting hole is communicated with the accommodating groove, and the reflective film is used for scattering the ultraviolet light in different areas in the hollow pipe.

Abstract: The present disclosure provides an ultraviolet LED epitaxial production method and an ultraviolet LED, where the method includes: pre-introducing a metal source and a group-V reactant on a substrate, to form a buffer layer through decomposition at a first temperature; growing an N-doped AlwGa1-wN layer on the buffer layer at a second temperature; growing a multi-section LED structure on the N-doped AlwGa1-wN layer at a third temperature, wherein a number of sections of the multi-section LED structure is in a range of 2 to 50; and each section of the LED structure comprises an AlxGa1-xN/AlyGa1-yN multi-quantum well structure and a P-doped AlmGa1-mN layer, and the multi-section LED structure emits light of one or more wavelengths, which realizes that a single ultraviolet LED emits ultraviolet light of different wavelengths, thereby improving the luminous efficiency of the ultraviolet LED.

Abstract: The present disclosure provides an ultraviolet LED epitaxial production method and an ultraviolet LED, where the method includes: pre-introducing a metal source and a group-V reactant on a substrate, to form a buffer layer through decomposition at a first temperature; growing an N-doped AlwGa1-wN layer on the buffer layer at a second temperature; growing a multi-section LED structure on the N-doped AlwGa1-wN layer at a third temperature, wherein a number of sections of the multi-section LED structure is in a range of 2 to 50; and each section of the LED structure comprises an AlxGa1-xN/AlyGa1-yN multi-quantum well structure and a P-doped AlmGa1-mN layer, and the multi-section LED structure emits light of one or more wavelengths, which realizes that a single ultraviolet LED emits ultraviolet light of different wavelengths, thereby improving the luminous efficiency of the ultraviolet LED.