Abstract: Presented herein is a method and devices for identifying biological molecules and cells labeled by small magnetic particles and by optically active dyes. The labeled molecules are typically presented in a biological fluid but are then magnetically guided into narrow channels by a sequential process of magnetically trapping and releasing the magnetic labels that is implemented by sequential synchronized reversing the magnetic fields of a regular array of patterned magnetic devices that exert forces on the magnetic particles. These devices, which may be bonded to a substrate, can be formed as parallel magnetic strips adjacent to current carrying lines or can be substantially of identical structure to trilayered MTJ cells. Once the magnetically labeled molecules have been guided into the appropriate channels, their optical labels can be detected by a process of optical excitation and de-excitation. The molecules are thereby identified and counted.

Abstract: The present invention is directed to an MRAM element comprising a plurality of magnetic tunnel junction (MTJ) memory elements. Each of the memory elements comprises a magnetic reference layer structure, which includes a first and a second magnetic reference layers with a tantalum perpendicular enhancement layer interposed therebetween, an insulating tunnel junction layer formed adjacent to the first magnetic reference layer opposite the tantalum perpendicular enhancement layer, and a magnetic free layer formed adjacent to the insulating tunnel junction layer. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof.

Abstract: A spin-transfer torque magnetic random access memory (STTMRAM) cell is disclosed. The memory cell comprises a selected magnetic tunnel junction (MTJ) identified to be programmed; a first transistor having a first port, a second port and a gate, the first port of the first transistor coupled to the selected MTJ; a first neighboring MTJ coupled to the selected MTJ through the second port of the first transistor; a second transistor having a first port, a second port, and a gate, the first port of the second transistor coupled to the selected MTJ; a second neighboring MTJ coupled to the selected MTJ through the second port of the second transistor; a first bit/source line coupled to the second end of the selected MTJ; and a second bit/source line coupled to the second end of the first neighboring MTJ and the second end of the second neighboring MTJ.

Abstract: The present invention is directed to an MRAM element comprising a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic free layer structure has a variable magnetization direction substantially perpendicular to the layer plane thereof. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by a first non-magnetic perpendicular enhancement layer. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer plane thereof.

Abstract: This invention describes an electronic skin care device including therein a specimen dispenser. Specimens are dispensed from the device after the specimen information stored in the storage component located in the dispenser is processed by the device. The user skin information stored in another storage component located in the device may also be utilized so that dispensed specimens have desired properties for the user's skin care need.

Abstract: The present invention is directed to an STT-MRAM device comprising a plurality of memory elements. Each of the memory elements includes an MTJ structure in between a seed layer and a cap layer. The MTJ structure includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; and a magnetic fixed layer separated from the magnetic reference layer structure by an anti-ferromagnetic coupling layer. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by an intermediate magnetic reference layer. The first, second, and intermediate magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.

Abstract: The present invention is directed to an MTJ memory element comprising a magnetic free layer structure including one or more magnetic free layers that have a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure including a first magnetic reference layer and a second magnetic reference layer with a perpendicular enhancement layer interposed therebetween, the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer.

Abstract: A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA), which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization, and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After forming a sensor sidewall that stops in the seed layer or on the bottom shield, a conformal insulation layer is deposited. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths <50 nm when PMA is greater than the FL self-demag field. Effective bias field is rather insensitive to sensor aspect ratio, which makes tall stripe and narrow width sensors viable for high RA TMR configurations.

Abstract: Techniques provided herein use aggregate endpoints in a virtual overlay network. In general, aggregate endpoints operate as a single receiving entity for certain packets/frames sent between different physical proximities of the virtual overlay network.

Abstract: The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving multiple layers of a first transition metal with multiple layers of a second transition metal; and a first magnetic layer formed on top of the multilayered seed structure. The first magnetic layer has a multilayer structure formed by interleaving layers of the first transition metal with layers of a magnetic material and has a first fixed magnetization direction substantially perpendicular to a layer plane thereof The first transition metal is platinum or palladium, while the second transition metal is selected from the group consisting of tantalum, titanium, zirconium, hafnium, vanadium, niobium, chromium, molybdenum, and tungsten.

Abstract: The present invention is directed to a spin transfer torque (STT) MRAM device having a perpendicular magnetic tunnel junction (MTJ) memory element. The memory element includes a perpendicular MTJ structure in between a non-magnetic seed layer and a non-magnetic cap layer. The MTJ structure comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween, an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure, and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. At least one of the magnetic free and reference layer structures includes a non-magnetic perpendicular enhancement layer, which improves the perpendicular anisotropy of magnetic layers adjacent thereto.

Abstract: A spin transfer oscillator (STO) with a seed/FGL/spacer/SIL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)YFeCo laminated field generation layer (FGL). The spin injection layer (SIL) may be laminated with a (A1/A2)XFeCo configuration. The FeCo layer in the SIL is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The (A1/A2)Y laminate (y=5 to 30) in the FGL may be exchange coupled with a high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO is typically formed between a main pole and trailing shield in a write head.

Abstract: The present invention is directed to a spin transfer torque (STT) MRAM device having a perpendicular magnetic tunnel junction (MTJ) memory element. The memory element includes a perpendicular MTJ structure in between a non-magnetic seed layer and a non-magnetic cap layer. The MTJ structure comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween, an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure, and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. At least one of the magnetic free and reference layer structures includes a non-magnetic perpendicular enhancement layer, which improves the perpendicular anisotropy of magnetic layers adjacent thereto.

Abstract: The present invention is directed to an MTJ memory element including a magnetic free layer structure which comprises one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure comprising a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer with the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with the second magnetic fixed sublayer formed adjacent to the anti-ferromagnetic

Abstract: A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA) which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After patterning, a conformal insulation layer is formed along the sensor sidewall. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths <50 nm when PMA is greater than the FL self-demag field. Effective bias field is rather insensitive to sensor aspect ratio which makes tall stripe and narrow width sensors a viable approach for high RA TMR configurations. Sensor sidewalls may extend into the seed layer or bottom shield.

Abstract: MRAM devices that are switched by unipolar electron flow are described. Embodiments use arrays of cells that include a diode or transistor with a pMTJ. The switching between the high and low resistance states of the pMTJ is achieved by electron flow in the same direction, i.e. a unipolar flow. Embodiments of the invention include methods of operating unipolar MRAM devices that include a read step after a write step to verify the operation. Embodiments also include methods of operating unipolar MRAM devices that include an iterative stepped-voltage write process that includes a plurality of write-read steps that begin with a selected voltage for the write pulse for the first iteration and gradually increase the voltage for the write pulse for the next iteration until a successful read operation occurs.

Abstract: Methods to provide customized skin care by using specimen dispensing device to dispense specimens from removable dispensers for the purpose of treating skin of a user are presented. Methods to utilize the embedded memory and electrical interface of the dispensing device and dispensers to produce customizable skin care products that give better skin treatment results are also presented. The invention may also be applied to health care and personal care needs.

Abstract: An electronic skin treatment device with an integrated specimen dispenser is disclosed, with which specimen dispense can be concurrently applied to target skin area while ultrasonic vibrations, mechanical massaging motions, galvanic stimulations, or light illuminations are used and as such a customizable, easier and better skin beautification can be achieved.

Abstract: The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving a first type sublayer and a second type sublayer to form one or more repeats of a unit bilayer structure and a first magnetic layer formed on top of the multilayered seed structure. The unit bilayer structure is made of the first and second type sublayers with at least one of the first and second type sublayers including therein one or more ferromagnetic elements. The multilayered seed structure may be amorphous or non-magnetic or both. The unit bilayer structure may be made of CoFeB and Ta sublayers.

Abstract: Techniques provided herein use aggregate endpoints in a virtual overlay network. In general, aggregate endpoints operate as a single receiving entity for certain packets/frames sent between different physical proximities of the virtual overlay network.