Abstract: A crystal growth doping apparatus and a crystal growth doping method are provided. The crystal growth doping apparatus includes a crystal growth furnace and a doping device that includes a feeding tube inserted to the furnace body along an oblique insertion direction, and a storage cover and a gate tube that are disposed in the feeding tube. The feeding tube extends from an outer surface thereof to form a placement opening, and the placement opening is recessed from an edge thereof to form an upper recessed portion and a lower recessed portion along the oblique insertion direction. The storage cover includes a storage tank and a handle. When the storage cover is disposed in the gate tube body, the gate tube body is configured to isolate an inner space of the feeding tube from the placement opening.

Abstract: A manufacturing method of a display device includes forming light emitting components on a first substrate, the light emitting components include a first side and a second side, and the second side is away from the first substrate; forming a circuit layer on the first substrate and on the second side of the light emitting components; forming a first protective layer on the circuit layer and forming an insulating layer on the first protective layer; removing the first substrate after forming a second substrate on the insulating layer; forming a black matrix layer on the first side of the light emitting components, and the black matrix layer includes openings; forming light conversion layers in the openings of the black matrix layer; forming a second protective layer on the black matrix layer and the light conversion layers; and forming a third substrate on the second protective layer.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A device includes a sensor die having a sensing region at a top surface of the sensor die, an encapsulant at least laterally encapsulating the sensor die, a conductive via extending through the encapsulant, and a front-side redistribution structure on the encapsulant and on the top surface of the sensor die, wherein the front-side redistribution structure is connected to the conductive via and the sensor die, wherein an opening in the front-side redistribution structure exposes the sensing region of the sensor die, and wherein the front-side redistribution structure includes a first dielectric layer extending over the encapsulant and the top surface of the sensor die, a metallization pattern on the first dielectric layer, and a second dielectric layer extending over the metallization pattern and the first dielectric layer.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A management system, a management method, and a location finding method for managing a plurality of physical locations having multi-dimensional coordinates within a room are provided. The management system includes a plurality of terminal devices, at least one coordination device, and a management device. The management device stores a first and a second pairing table. The management device is configured to, in response to an external command, perform: obtaining an identification number of a first terminal device of the terminal devices from the first pairing table; determining, from the second pairing table, a first coordination device that is configured to manage the first terminal device; and transmitting a task command to the first coordination device such that the first coordination device assigns the first terminal device to complete the task command.

Abstract: A system for application (APP) protection includes a processor. The processor is arranged to execute a guest virtual machine (VM), at least one primary VM, a hypervisor, and a host VM, wherein at least one APP protection with at least one identification (ID) of the at least one APP running on the guest VM is downloaded to the guest VM. The hypervisor includes an install service module and a launcher module. The host VM is arranged to: receive at least one install command from the guest VM, and generate an install service command to the install service module; verify the at least one APP protection by the at least one ID and generate at least one verification result; obtain the at least one ID from the at least one primary VM according to the at least one verification result; and generate a launch command to the launcher module.

Abstract: A system for model protection includes a processor. The processor is arranged to execute a guest virtual machine (VM), a primary VM, and a hypervisor. The guest VM includes a model, and is arranged to send at least one command to a command hub. The primary VM is arranged to refer to the at least one command sent from the command hub to manage and configure a protection setting for a protected model derived from the model. The hypervisor is arranged to receive a safety setting command sent by the primary VM, and manage and configure the safety protection component according to the safety setting command, to set a read-only mode of the protected model.

Abstract: A computing system includes a processor, and the processor is arranged to execute: a guest virtual machine (VM), a hypervisor, and a primary VM, wherein an operating system (OS) runs on the guest VM, and an application (APP) runs on the OS. The kernel of the OS includes a protection service module and a memory management unit (MMU) manager. The protection service module is arranged to receive at least one virtual address and a first size information sent by a client of the APP. The primary VM includes a protection manager, and the protection manager is arranged to obtain a physical address array and a second size information according to the at least one virtual address and the first size information sent by the protection service through the hypervisor.

Abstract: A system for kernel protection includes a processor and a transmission interface. The processor is arranged to execute at least one guest virtual machine (VM), at least one primary VM, and a hypervisor. The at least one guest VM is arranged to send at least one command to a command hub. The at least one primary VM is arranged to manage and configure a safety setting according to the at least one command from the command hub and at least one policy, and manage and configure a safety protection component according to the safety setting. The hypervisor is arranged to manage and configure the safety protection component according to a ground rule and at least one safety setting command from the at least one primary VM. The transmission interface is arranged to bind the at least one primary VM to the hypervisor.

Abstract: A management system, a management method, and a location finding method for managing a plurality of physical locations having multi-dimensional coordinates within a room are provided. The management system includes a plurality of terminal devices, at least one coordination device, and a management device. The management device stores a first and a second pairing table. The management device is configured to, in response to an external command, perform: obtaining an identification number of a first terminal device of the terminal devices from the first pairing table; determining, from the second pairing table, a first coordination device that is configured to manage the first terminal device; and transmitting a task command to the first coordination device such that the first coordination device assigns the first terminal device to complete the task command.

Abstract: A system and method for removing unwanted heat generated by a piezoelectric element of an ultrasound transducer. Some implementations have high thermal conductivity (HTC) material placed adjacent to the piezoelectric element. The HTC material can be thermally coupled to one or more heat sinks. Use of HTC material in conjunction with these piezoelectric element surfaces is managed to avoid degradation of propagating acoustic energy. Use of the HTC material in conjunction with heat sinks allows for creation of thermal paths away from the piezoelectric element. Active cooling of the heat sinks with water or air can further draw heat from the piezoelectric element. Further implementations form a composite matrix of thermally conductive material or interleave thermally conductive layers with piezoelectric material.

Abstract: A system and method for removing unwanted heat generated by a piezoelectric element of an ultrasound transducer. Some implementations have high thermal conductivity (HTC) material placed adjacent to the piezoelectric element. The HTC material can be thermally coupled to one or more heat sinks. Use of HTC material in conjunction with these piezoelectric element surfaces is managed to avoid degradation of propagating acoustic energy. Use of the HTC material in conjunction with heat sinks allows for creation of thermal paths away from the piezoelectric element. Active cooling of the heat sinks with water or air can further draw heat from the piezoelectric element. Further implementations form a composite matrix of thermally conductive material or interleave thermally conductive layers with piezoelectric material.

Abstract: A system and method for removing unwanted heat generated by a piezoelectric element of an ultrasound transducer. Some implementations have high thermal conductivity (HTC) material placed adjacent to the piezoelectric element. The HTC material can be thermally coupled to one or more heat sinks. Use of HTC material in conjunction with these piezoelectric element surfaces is managed to avoid degradation of propagating acoustic energy. Use of the HTC material in conjunction with heat sinks allows for creation of thermal paths away from the piezoelectric element. Active cooling of the heat sinks with water or air can further draw heat from the piezoelectric element. Further implementations form a composite matrix of thermally conductive material or interleave thermally conductive layers with piezoelectric material.

Abstract: A system and method for removing unwanted heat generated by a piezoelectric element of an ultrasound transducer. Some implementations have high thermal conductivity (HTC) material placed adjacent to the piezoelectric element. The HTC material can be thermally coupled to one or more heat sinks. Use of HTC material in conjunction with these piezoelectric element surfaces is managed to avoid degradation of propagating acoustic energy. Use of the HTC material in conjunction with heat sinks allows for creation of thermal paths away from the piezoelectric element. Active cooling of the heat sinks with water or air can further draw heat from the piezoelectric element. Further implementations form a composite matrix of thermally conductive material or interleave thermally conductive layers with piezoelectric material.

Abstract: A system and method for removing unwanted heat generated by a piezoelectric element of an ultrasound transducer. Some implementations have high thermal conductivity (HTC) material placed adjacent to the piezoelectric element. The HTC material can be thermally coupled to one or more heat sinks. Use of HTC material in conjunction with these piezoelectric element surfaces is managed to avoid degradation of propagating acoustic energy. Use of the HTC material in conjunction with heat sinks allows for creation of thermal paths away from the piezoelectric element. Active cooling of the heat sinks with water or air can further draw heat from the piezoelectric element. Further implementations form a composite matrix of thermally conductive material or interleave thermally conductive layers with piezoelectric material.

Abstract: A system and method for removing unwanted heat generated by a piezoelectric element of an ultrasound transducer. Some implementations have high thermal conductivity (HTC) material placed adjacent to the piezoelectric element. The HTC material can be thermally coupled to one or more heat sinks. Use of HTC material in conjunction with these piezoelectric element surfaces is managed to avoid degradation of propagating acoustic energy. Use of the HTC material in conjunction with heat sinks allows for creation of thermal paths away from the piezoelectric element. Active cooling of the heat sinks with water or air can further draw heat from the piezoelectric element. Further implementations form a composite matrix of thermally conductive material or interleave thermally conductive layers with piezoelectric material.

Abstract: Noninvasive pain treatment of skeletal cancer metastases in cancer patients utilizing planar or focused ultrasound. The ultrasound energy preferably targets at the Periosteum or immediate soft-bone-tissue interface, where local sensory pain receptors are directly affected by the growing tumor, to generate heat to destroy local sensory pain receptors so as to interrupt or block the pain feedback pathway to the central nervous system.

Abstract: A system and method for removing unwanted heat generated by a piezoelectric element of an ultrasound transducer. Some implementations have high thermal conductivity (HTC) material placed adjacent to the piezoelectric element. The HTC material can be thermally coupled to one or more heat sinks. Use of HTC material in conjunction with these piezoelectric element surfaces is managed to avoid degradation of propagating acoustic energy. Use of the HTC material in conjunction with heat sinks allows for creation of thermal paths away from the piezoelectric element. Active cooling of the heat sinks with water or air can further draw heat from the piezoelectric element. Further implementations form a composite matrix of thermally conductive material or interleave thermally conductive layers with piezoelectric material.

Abstract: A system and method for removing unwanted heat generated by a piezoelectric element of an ultrasound transducer. Some implementations have high thermal conductivity (HTC) material placed adjacent to the piezoelectric element. The HTC material can be thermally coupled to one or more heat sinks. Use of HTC material in conjunction with these piezoelectric element surfaces is managed to avoid degradation of propagating acoustic energy. Use of the HTC material in conjunction with heat sinks allows for creation of thermal paths away from the piezoelectric element. Active cooling of the heat sinks with water or air can further draw heat from the piezoelectric element. Further implementations form a composite matrix of thermally conductive material or interleave thermally conductive layers with piezoelectric material.