Abstract: This disclosure is a cleaning method for a deposition chamber. First, a purge gas is supplied into a deposition chamber, and molybdenum precursor remaining in the deposition chamber is extracted through a vacuum pump. Then, a hydrogen plasma is used to reduce a molybdenum trioxide deposit attached to the inner surface of the deposition chamber, and the molybdenum trioxide deposit is reduced to molybdenum particles and water vapor. The purge gas is again supplied into the deposition chamber, and molybdenum particles and water vapor is extracted through the vacuum pump. Through the method described in this invention, the molybdenum trioxide deposit attached to the inner surface of the deposition chamber and the residual molybdenum precursor can be effectively removed, and the number of particles in the deposition chamber can be reduced to improve the quality and yield of the subsequent thin film deposition process.

Abstract: A leak check is performed on a semiconductor wafer processing tool that includes a process chamber and process gas lines, and a semiconductor wafer is processed using the semiconductor wafer processing tool if the leak check passes. Each gas line includes a mass flow controller (MFC) and normally closed valves including an upstream and downstream valves upstream and downstream of the MFC. Leak checking includes: leak checking up to the downstream valves of the gas lines with the upstream valves closed and the downstream valves of the gas lines closed; and leak checking up to the upstream valve of each the process gas line with the upstream valves of the of the process gas lines closed and with the downstream valve of the of the process gas line being leak checked open and the downstream valve of every other process gas line closed.

Abstract: An apparatus for performing a deposition process on a semiconductor wafer includes a chamber, a wafer holder, and a shielding structure. The chamber contains a reaction area, the wafer holder is disposed in the chamber to hold the semiconductor wafer, and the reaction area is above the semiconductor wafer. The shielding structure is disposed in the chamber and isolates an inner sidewall of the chamber from the reaction area. The shielding structure includes a base member, a first member, and a second member. The base member is disposed between the inner sidewall of the chamber and the wafer holder. The first member is disposed on the base member and is windowless. The second member is disposed on the base member and within the first member, and the second member includes a sidewall provided with a first window to transfer the semiconductor wafer.

Abstract: Z The present disclosure is directed to a transfer blade including a first end segment, a second end segment opposite to the first end segment, and an intermediate segment extending from the first end segment to the second end segment. The first end segment includes a first contact region and the second end segment includes a second contact region. The first and second contact regions are configured to contact locations of a surface of a workpiece that do not overlap or are not aligned with a sensitive area of the workpiece. The sensitive area of the workpiece may be an EUV frame or a reticle of the workpiece. A non-contact region extends continuously along the first end segment, the intermediate segment, and the second end segment, and the non-contact region overlaps the sensitive area of the workpiece and is spaced apart from the sensitive area of the workpiece.

Abstract: This disclosure is a method of using plasma enhanced process to do periodic maintenance. The method includes performing a first atomic layer deposition on a substrate on a carrier disk to form a thin film on the substrate, and determining that an insulating film deposited on an edge of a surface of the carrier disk has a thickness greater than a pre-determined value. A second atomic layer deposition is performed on the carrier disk without the substrate placed thereon, to from a conductive film on the insulating film of the carrier disk, so that the carrier disk has conductive properties. Then the substrate is placed on the carrier disk, and the first atomic layer deposition is performed on the substrate on the carrier disk. Through the method, the cycle of cleaning and maintaining the carrier disk is greatly extended to improve the rate of equipment usage.

Abstract: A clamp ring including an inner periphery of increased diameter at locations where inwardly extending tabs are not located reduces the risk a workpiece that is placed in close proximity to the clamp ring or which contacts the clamp ring during processing will stick to the clamp ring.

Abstract: A clamp ring including an inner periphery of increased diameter at locations where inwardly extending tabs are not located reduces the risk a workpiece that is placed in close proximity to the clamp ring or which contacts the clamp ring during processing will stick to the clamp ring.

Abstract: A wafer pod transfer assembly includes a wafer pod port to receive a wafer pod, a transfer axle coupled to the wafer pod port, a shaft receiver, a shaft coupled to the transfer axle and to the shaft receiver, a pin through the shaft receiver and through the shaft, wherein the pin comprises a first end and a second end, opposite the first end, and a pin buckle including a first loop and a second loop. The pin buckle is coupled to the pin, the first loop encircles the first end of the pin, and the second loop encircles the second end of the pin.

Abstract: A deposition tool includes a power cable pedestal including a pedestal body with a first surface and a second surface and a guide hole that extends through the pedestal body from the first surface to the second surface, where at least a portion of a sidewall of the guide hole has a slanted surface, and where the pedestal body is formed from a first material with a melting point that is higher than a melting point of Polyoxymethylene (POM). The deposition tool includes a bushing arranged over the guide hole, where the bushing is formed from a second material with a melting point that is higher than the melting point of POM.

Abstract: A deposition tool includes a power cable pedestal including a pedestal body with a first surface and a second surface and a guide hole that extends through the pedestal body from the first surface to the second surface, where at least a portion of a sidewall of the guide hole has a slanted surface, and where the pedestal body is formed from a first material with a melting point that is higher than a melting point of Polyoxymethylene (POM). The deposition tool includes a bushing arranged over the guide hole, where the bushing is formed from a second material with a melting point that is higher than the melting point of POM.

Abstract: A wafer pod transfer assembly includes a wafer pod port to receive a wafer pod, a transfer axle coupled to the wafer pod port, a shaft receiver, a shaft coupled to the transfer axle and to the shaft receiver, a pin through the shaft receiver and through the shaft, wherein the pin comprises a first end and a second end, opposite the first end, and a pin buckle including a first loop and a second loop. The pin buckle is coupled to the pin, the first loop encircles the first end of the pin, and the second loop encircles the second end of the pin.

Abstract: A leak check is performed on a semiconductor wafer processing tool that includes a process chamber and process gas lines, and a semiconductor wafer is processed using the semiconductor wafer processing tool if the leak check passes. Each gas line includes a mass flow controller (MFC) and normally closed valves including an upstream and downstream valves upstream and downstream of the MFC. Leak checking includes: leak checking up to the downstream valves of the gas lines with the upstream valves closed and the downstream valves of the gas lines closed; and leak checking up to the upstream valve of each the process gas line with the upstream valves of the of the process gas lines closed and with the downstream valve of the of the process gas line being leak checked open and the downstream valve of every other process gas line closed.

Abstract: The present disclosure is directed to a transfer blade including a first end segment, a second end segment opposite to the first end segment, and an intermediate segment extending from the first end segment to the second end segment. The first end segment includes a first contact region and the second end segment includes a second contact region. The first and second contact regions are configured to contact locations of a surface of a workpiece that do not overlap or are not aligned with a sensitive area of the workpiece. The sensitive area of the workpiece may be an EUV frame or a reticle of the workpiece. A non-contact region extends continuously along the first end segment, the intermediate segment, and the second end segment, and the non-contact region overlaps the sensitive area of the workpiece and is spaced apart from the sensitive area of the workpiece.

Abstract: A wafer pod transfer assembly includes a wafer pod port to receive a wafer pod, a transfer axle coupled to the wafer pod port, a shaft receiver, a shaft coupled to the transfer axle and to the shaft receiver, a pin through the shaft receiver and through the shaft, wherein the pin comprises a first end and a second end, opposite the first end, and a pin buckle including a first loop and a second loop. The pin buckle is coupled to the pin, the first loop encircles the first end of the pin, and the second loop encircles the second end of the pin.

Abstract: A wafer pod transfer assembly includes a wafer pod port to receive a wafer pod, a transfer axle coupled to the wafer pod port, a shaft receiver, a shaft coupled to the transfer axle and to the shaft receiver, a pin through the shaft receiver and through the shaft, wherein the pin comprises a first end and a second end, opposite the first end, and a pin buckle including a first loop and a second loop. The pin buckle is coupled to the pin, the first loop encircles the first end of the pin, and the second loop encircles the second end of the pin.

Abstract: A clamp ring including an inner periphery of increased diameter at locations where inwardly extending tabs are not located reduces the risk a workpiece that is placed in close proximity to the clamp ring or which contacts the clamp ring during processing will stick to the clamp ring.

Abstract: An apparatus for performing a deposition process on a semiconductor wafer includes a chamber, a wafer holder, and a shielding structure. The chamber contains a reaction area, the wafer holder is disposed in the chamber to hold the semiconductor wafer, and the reaction area is above the semiconductor wafer. The shielding structure is disposed in the chamber and isolates an inner sidewall of the chamber from the reaction area. The shielding structure includes a base member, a first member, and a second member. The base member is disposed between the inner sidewall of the chamber and the wafer holder. The first member is disposed on the base member and is windowless. The second member is disposed on the base member and within the first member, and the second member includes a sidewall provided with a first window to transfer the semiconductor wafer.

Abstract: A wafer pod transfer assembly is provided. The wafer pod transfer assembly includes a wafer pod port to receive a wafer pod, a transfer axle coupled to the wafer pod port, a shaft receiver, a shaft coupled to the transfer axle and to the shaft receiver, a pin through the shaft receiver and through the shaft, wherein the pin comprises a first end and a second end, opposite the first end, and a pin buckle including a first loop and a second loop. The pin buckle is coupled to the pin, the first loop encircles the first end of the pin, and the second loop encircles the second end of the pin.

Abstract: A deposition tool includes a power cable pedestal including a pedestal body with a first surface and a second surface and a guide hole that extends through the pedestal body from the first surface to the second surface, where at least a portion of a sidewall of the guide hole has a slanted surface, and where the pedestal body is formed from a first material with a melting point that is higher than a melting point of Polyoxymethylene (POM). The deposition tool includes a bushing arranged over the guide hole, where the bushing is formed from a second material with a melting point that is higher than the melting point of POM.

Abstract: The present invention relates to a control system and control method. The control system is applied to a machine tool and includes a horizontal monitor unit, a temperature monitor unit, a temperature adjustment device and a controller. The horizontal monitor unit is configured to measure a horizontal angle of a table and the temperature monitor unit is configured to measure a temperature information of a sensing area in a machining device. The controller receives the horizontal angle and the temperature information, then generates a compensation signal to the temperature adjustment device to change the temperature of an adjusting area in the machining device so that the horizontal angle of the table and the vertical inclination of the machining device are orthogonal to each other.