Patents by Inventor YU-CHING PENG

YU-CHING PENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9653607
    Abstract: A thin film transistor (TFT) includes a semiconductive layer, a first inter-layer drain (ILD) layer, a second ILD layer, and at least one contact hole passing through the first ILD layer and the second ILD layer. The semiconductive layer includes a channel region, a first lightly doped drain (LDD) region, a second LDD region, a first heavily doped drain (HDD) region, and a second HDD region. The at least one contact hole includes a first portion passing through the second ILD layer and a second portion passing through the first ILD layer. The second portion gradually narrows along a direction from a top to a bottom of the first ILD layer.
    Type: Grant
    Filed: May 21, 2015
    Date of Patent: May 16, 2017
    Assignee: Century Technology (Shenzhen) Corporation Limited
    Inventor: Yu-Ching Peng
  • Publication number: 20160293770
    Abstract: A thin film transistor (TFT) includes a semiconductive layer, a first inter-layer drain (ILD) layer, a second ILD layer, and at least one contact hole passing through the first ILD layer and the second ILD layer. The semiconductive layer includes a channel region, a first lightly doped drain (LDD) region, a second LDD region, a first heavily doped drain (HDD) region, and a second HDD region. The at least one contact hole includes a first portion passing through the second ILD layer and a second portion passing through the first ILD layer. The second portion gradually narrows along a direction from a top to a bottom of the first ILD layer.
    Type: Application
    Filed: May 21, 2015
    Publication date: October 6, 2016
    Inventor: YU-CHING PENG