Abstract: A round bar cutting device includes a tool rest that is penetrated by a perforation for a round bar to pass through in axial direction. A virtual axis is defined to pass through the radial center of the perforation in the extension direction of the perforation. Four planer tools protrude from the tool rest. The planer tools are spaced apart around the axis as the center. A first edge is formed on one side of the planer tools towards the axis respectively, so as to cut a square bar which moves towards the perforation among the planer tools and rotates round the axis to form the round bar. The cutting device can fully cut the entire section of the square bar in the axial direction into the round bar, and the material utilization efficiency of the square bar is increased.

Abstract: A workpiece guiding device having a base, a supporting component and a limiting component, wherein the base is formed with a loading surface to load the workpiece. The loading surface is formed with a first long slot facing downward. A supporting component is movably configured on the loading surface. The bottom of the supporting component is formed with a second long slot facing upward. The first and second long slots are opposite each other in the vertical direction, forming a long first space. The limiting component is removably configured in the first space. The radial periphery of the limiting component enters the long slots. One side of the supporting component is defined as a supporting side, which is used to receive the lateral pressing by the workpiece. The workpiece guiding device enhances the convenience in adjusting the position of the supporting component at a regularly used tooling angle.

Abstract: The present disclosure is generally related to semiconductor devices, and more particularly to field-effect transistors (FETs). A substrate includes fin-like protruding portions in which source/drain regions are formed on the fin-like protruding portions of the substrate. The source/drain regions are laterally adjacent and electrically coupled to the nanostructure channels. A dielectric material is partially filling spaces between the fin-like protruding portions and partially are coupled to the source/drain regions. A barrier layer is on the dielectric material and covers portions of the source/drain regions. A source/drain contact is formed in the barrier layer and is partially in contact with the source/drain regions. The barrier layer and the dielectric material that formed below the MD contact in spaces between the source/drain regions result in a reduction of parasitic capacitance of the metal contacts such as gate-drain capacitance (Cgd).

Abstract: A braking mechanism of a wheeled device is provided, including: a main body, configured to be connected to the wheeled device including at least one wheel; an adjusting member, disposed on the main body and including a rod and a first abutting member adjustably positioned on the rod; a braking member, movably disposed on the main body; and an elastic member, abutted between the first abutting member and the braking member so that the braking member is biased by the force of the elastic member toward the at least one wheel to frictionally contact the at least one wheel.

Abstract: A mortise and tenon joint tooling guide includes a base seat, two templates, an adjusting plate and a clamping structure. The base seat has a platform and an opening through the platform. Each of the templates can be arranged on the platform at intervals in a movable form. Each of the templates is formed with a guiding edge on one side. The guiding edges face each other and are used to guide the machining tool going through the opening to process a workpiece to form a mortise or tenon. The adjusting plate is configured on the base seat, capable of moving back and forth, and is used to abut against the workpiece, and to correct the distance between the template and the surface. The clamping structure is configured on the base seat, and is used to clamp the workpiece, so as to relatively position the platform and the workpiece.

Abstract: A drilling guide with easily configured mounting holes for handles and insertion rods thereof includes a base, an abutting bar, two hole site structures and two insertion rods. The abutting bar slides back and forth in the second direction on the back side of the base. The hole site structures can oppositely slide in the first direction on the base, and penetrate a channel respectively, so that the drilling tool is aligned with an object on the back side of the base through the channels to process two mounting holes. The insertion rods are removably disposed in the channels. The diameter of the insertion rod changes in axial direction. The insertion rod is axially located in the channel, and the insertion rod protrudes from the bolt, and axially enters the nail hole of the handle, so as to set the distance of the mounting holes to fit the handle.

Abstract: A semiconductor device includes a substrate, first and second stacks of semiconductor nanosheets, a gate structure, first and second strained layers and a blocking wall. The substrate includes first and second fins separated by an insulating region. The first stack of semiconductor nanosheets is disposed on the first fin. The second stack of semiconductor nanosheets disposed on the second fin. The gate structure wraps the first and second stacks of semiconductor nanosheets. The first strained layer is disposed on the first fin adjacent to the first stack of semiconductor nanosheets. The second strained layer is disposed on the second fin adjacent to the second stack of semiconductor nanosheets. The blocking wall is disposed on the insulating region and located between the first and second strained layers. The top surface of the blocking wall is higher than the top surface of the first strained layer or the second strained layer.

Abstract: A braking mechanism of a wheeled device is provided, including: a main body, configured to be connected to the wheeled device including at least one wheel; an adjusting member, disposed on the main body and including a rod and a first abutting member adjustably positioned on the rod; a braking member, movably disposed on the main body; and an elastic member, abutted between the first abutting member and the braking member so that the braking member is biased by the force of the elastic member toward the at least one wheel to frictionally contact the at least one wheel.

Abstract: A frequency selective coupler configured as a harmonic rejection filter includes an electromagnetic element configured to electromagnetically couple to a signal path between an output of a power amplifier and an antenna, an impedance network coupled between an isolated port of the coupler and ground, the impedance network configured to provide a harmonic filter response, and an electrically unconnected coupled port connected to the electromagnetic element.

Abstract: A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and then conducting an anneal process to divide the channel region into a top portion and a bottom portion. After removing the pad layer, a gate structure is formed on the substrate and a lightly doped drain (LDD) is formed adjacent to two sides of the gate structure.

Abstract: A graft polymer is provided, which includes a polymer backbone with a plurality of hydroxy groups, protection group modified histidine grafted onto the side of the polymer backbone, and hydrophilic polymer having terminal reactive group grafted onto the side of the polymer backbone. The graft polymer coating can be applied to metal material to form a composite material, which can be implanted into an organism to reduce adhesion problems.

Abstract: Tunable, broadband directional coupler circuits employing one or more additional, switchable coupling circuits for controlling frequency response, and related methods. In exemplary aspects, the directional coupler includes one or more additional coupling circuits that each include an additional coupling line located adjacent to the primary coupling line and that can be selectively activated to change a frequency response of the directional coupler. When an additional coupling circuit is activated, its additional coupling line has the effect of extending the length of the primary coupling line through mutual inductance, thus changing the coupling frequency response of the directional coupler. The additional coupling circuit includes one or more switch(es) to allow for the selective coupling of its additional coupling line to the coupling and/or isolation ports of the directional coupler to selectively change and control the frequency response of the primary coupling line.

Abstract: Tunable, broadband directional coupler circuits employing one or more additional, switchable coupling circuits for controlling frequency response, and related methods. In exemplary aspects, the directional coupler includes one or more additional coupling circuits that each include an additional coupling line located adjacent to the primary coupling line and that can be selectively activated to change a frequency response of the directional coupler. When an additional coupling circuit is activated, its additional coupling line has the effect of extending the length of the primary coupling line through mutual inductance, thus changing the coupling frequency response of the directional coupler. The additional coupling circuit includes one or more switch(es) to allow for the selective coupling of its additional coupling line to the coupling and/or isolation ports of the directional coupler to selectively change and control the frequency response of the primary coupling line.

Abstract: A device that includes a substrate including a plurality of metal layers, and a plurality of dielectric layers. The device further includes a first passive component including a first terminal, a second terminal, and a first body, mounted to the substrate on one of the plurality of metal layers. The first terminal is coupled to a first ground signal and the second terminal is coupled to a second ground signal such that the first passive component is shorted. The first passive component may be an inductor, a capacitor or a resistor. The first passive component is operable as a heat sink, a heat shield, an electromagnetic shield, or as a tuning inductor.

Abstract: A text-to-speech (TTS) dubbing system is provided, including: a speech input unit, configured to obtain speech information; an input unit, configured to obtain target text information and a parameter adjustment instruction; and a processing unit, including: an acoustic module, configured to obtain a speech feature vector and an acoustic parameter of the speech information; and a text phoneme analysis module, configured to analyze a phoneme sequence corresponding to the target text information according to the target text information; and an audio synthesis unit, configured to adjust the acoustic parameter of the speech information according to the parameter adjustment instruction, and combine speech information obtained after the acoustic parameter is adjusted with the target text information to form a synthesized audio.