Abstract: The invention discloses a method and a device of improving crystallization ratio of polysilicon, which is applied to the process that the amorphous silicon layer converts into the polysilicon layer. More specifically, superposing at least two pulse laser beams into a superposed pulse laser beam. The pulse width of the superposed pulse laser beam is larger than each pulse laser beam. Next, utilizing the superposed pulse laser beam to irradiate onto the amorphous silicon layer for transforming the amorphous silicon layer into polysilicon layer. The superposed pulse laser beam irradiates onto the surface of the amorphous silicon layer. The amorphous silicon layer is transformed into the polysilicon layer. Consequently, the crystallization ratio of polysilicon is improved.

Abstract: The present disclosure discloses a method of preparing the polysilicon layer, wherein by the depositions of the amorphous silicon thin film in batches for many times and the implementation of the excimer laser process after each deposition, it can not only convert the amorphous silicon thin film into the polysilicon thin film completely, but also control the uniformity of the polysilicon thin film, thereby gaining the polysilicon layer of good uniformity which composed of the polysilicon thin films stacked in sequence, improving the performance of the product while effectively avoiding the chromatism problems of the display device, and significantly improving the yield of products.

Abstract: The present disclosure discloses a method of laser annealing process, wherein the surface of the semiconductor structure on a substrate is scanned by a laser annealing device, and the said laser annealing device comprises a laser source and the optical instruments. The invention comprises the following steps: generating a laser beam by the laser source, and the laser beam is irradiating on a mirror, the route thereof changed by 90 degrees and converging the laser beam by the optical instrument thereafter. By this method, an improved annealing process which saved the chamber, reduced the likelihood of the oxidation of silicon film in the annealing process, improved the electrical property of silicon substrate, reduced the weight of machine and further simplified the maintenance machine.

Abstract: The invention discloses a method and a device of improving crystallization ratio of polysilicon, which is applied to the process that the amorphous silicon layer converts into the polysilicon layer. More specifically, superposing at least two pulse laser beams into a superposed pulse laser beam. The pulse width of the superposed pulse laser beam is larger than each pulse laser beam. Next, utilizing the superposed pulse laser beam to irradiate onto the amorphous silicon layer for transforming the amorphous silicon layer into polysilicon layer. The superposed pulse laser beam irradiates onto the surface of the amorphous silicon layer. The amorphous silicon layer is transformed into the polysilicon layer. Consequently, the crystallization ratio of polysilicon is improved.

Abstract: A method for forming polysilicon using high energy sources of radiation includes the steps of providing a laser system which has at least two laser sources with different wavelengths, a dichroic mirror, a reflecting mirror and a substrate; generating a laser beam by the laser sources to irradiate towards the substrate perpendicularly by the dichroic mirror and the reflecting mirror which are faced to the laser source and meet the laser sources at a certain angle; placing the reflecting mirror above the dichroic mirror; placing the a semiconductor thin-film material on the substrate. The advantages of the above technical solution are that as follows: the crystallization rate of poly-silicon is effectively increased; the usage frequency of the excimer laser is reduced; the cost thereof is reduced; the throughput of annealing is affectively improved.