Abstract: The present invention provides a display panel and manufacturing method thereof, the method including following steps: providing a driving backplane and a light-emitting substrate, and bonding the driving backplane and the light-emitting substrate; patterning the light-emitting substrate to form a pixel array; forming a thin film packaging layer on an outside of the pixel array, the thin film packaging layer completely covering the pixel array; forming quantum dots on top of the thin film packaging layer to form a multi-color display; forming a reflective array between two adjacent quantum dots to avoid optical crosstalk between the pixel arrays. The display panel and the method of the present invention break through the physical limit of the high PPI, high-precision metal mask, which can realize the display of 2000 and higher PPI, and can prevent the optical crosstalk between the pixel arrays.

Abstract: The present invention provides a silicon-based micro display screen and method for manufacturing the same. The method includes following steps: providing a silicon substrate, defining a number of sub-pixel regions on the silicon substrate, and sequentially and respectively preparing an anode layer, an OLED layer, a cathode layer and a first protective layer in each sub-pixel region on the silicon substrate; plasma bombarding and removing the exposed OLED layer; forming a second protective layer on sides of the etched cathode layer, the protective layer and the OLED layer; sequentially performing other sub-pixels; and processing and forming a silicon-based micro-display screen based on the results of the above steps. In present invention, the etching and coating processes are carried out in a vacuum environment to prevent the OLED layer from being invaded by water vapor and oxygen, and prolong the service life of the silicon-based micro display screen.

Abstract: The present invention provides a display panel and manufacturing method thereof, the method including following steps: providing a driving backplane and a light-emitting substrate, and bonding the driving backplane and the light-emitting substrate; patterning the light-emitting substrate to form a pixel array; forming a thin film packaging layer on an outside of the pixel array, the thin film packaging layer completely covering the pixel array; forming quantum dots on top of the thin film packaging layer to form a multi-color display; forming a reflective array between two adjacent quantum dots to avoid optical crosstalk between the pixel arrays. The display panel and the method of the present invention break through the physical limit of the high PPI, high-precision metal mask, which can realize the display of 2000 and higher PPI, and can prevent the optical crosstalk between the pixel arrays.

Abstract: The present invention provides a high-resolution Micro-OLED display module and a manufacturing method thereof. The method for manufacturing the high-resolution Micro-OLED comprises: S1, providing a substrate, and manufacturing light-emitting pixel units on the substrate; S2, encapsulating the light-emitting pixel units by a film encapsulation technique, and forming a film encapsulation layer; S3, manufacturing sub-pixel units on the surface of the film encapsulation layer, and depositing a metal reflective layer between two sub-pixel units which are adjacent to each other; S4, manufacturing a metal oxide layer on the surfaces of the metal reflective layer and the sub-pixel units by a deposition technique, to obtain a high-resolution Micro-OLED matrix; and S5, using a cover plate to encapsulate the high-resolution Micro-OLED matrix produced in step S4, to finish the manufacturing of a high-resolution Micro-OLED.

Abstract: The present invention provides a high-resolution Micro-OLED display module and a manufacturing method thereof. The method for manufacturing the high-resolution Micro-OLED comprises: S1, providing a substrate, and manufacturing light-emitting pixel units on the substrate; S2, encapsulating the light-emitting pixel units by a film encapsulation technique, and forming a film encapsulation layer; S3, manufacturing sub-pixel units on the surface of the film encapsulation layer, and depositing a metal reflective layer between two sub-pixel units which are adjacent to each other; S4, manufacturing a metal oxide layer on the surfaces of the metal reflective layer and the sub-pixel units by a deposition technique, to obtain a high-resolution Micro-OLED matrix; and S5, using a cover plate to encapsulate the high-resolution Micro-OLED matrix produced in step S4, to finish the manufacturing of a high-resolution Micro-OLED.

Abstract: The present invention relates to a method of preparing a Li film, wherein said Li film is fabricated by directly decomposing a compound of Li under a vacuum evaporation condition, and said compound is Li3N. Said Li film is fabricated by decomposing Li3N at an evaporation rate of 0.01-0.25 nm/s and an evaporation temperature of 300-450° C., and said Li film has a thickness of 0.3-5.0 nm. The present invention also relates to an organic light emitting device comprising said Li film as an electron injection layer and a method for the preparation thereof, and an organic light emitting device including an electron injection layer comprising an electron transport material doped with Li obtained by decomposing Li3N under a vacuum evaporation condition, and a method for the preparation thereof.

Abstract: The present invention relates to a method of preparing a Li film, wherein said Li film is fabricated by directly decomposing a compound of Li under a vacuum evaporation condition, and said compound is Li3N. Said Li film is fabricated by decomposing Li3N at an evaporation rate of 0.01-0.25 nm/s and an evaporation temperature of 300-450° C., and said Li film has a thickness of 0.3-5.0 nm. The present invention also relates to an organic light emitting device comprising said Li film as an electron injection layer and a method for the preparation thereof, and an organic light emitting device including an electron injection layer comprising an electron transport material doped with Li obtained by decomposing Li3N under a vacuum evaporation condition, and a method for the preparation thereof.

Abstract: The present invention relates to a method of preparing a Li film, wherein said Li film is fabricated by directly decomposing a compound of Li under a vacuum evaporation condition, and said compound is Li3N. Said Li film is fabricated by decomposing Li3N at an evaporation rate of 0.01-0.25 nm/s and an evaporation temperature of 300-450° C., and said Li film has a thickness of 0.3-5.0 nm. The present invention also relates to an organic light emitting device comprising said Li film as an electron injection layer and a method for the preparation thereof, and an organic light emitting device including an electron injection layer comprising an electron transport material doped with Li obtained by decomposing Li3N under a vacuum evaporation condition, and a method for the preparation thereof.

Abstract: The present invention relates to an organic electroluminescent display, including a substrate, a set of anodes, an organic functional layer, a set of cathodes and a packaging sheet, wherein a set of electrode leads are disposed on the packaging sheet for electrical connection with a control circuit of the display, and the electrode leads includes a set of anode leads and a set of cathode leads which are electrically connected with the corresponding anodes and cathodes on the substrate, respectively. The present invention further relates to a double-sided organic electroluminescent display having the above features.

Abstract: The present invention relates to an organic electroluminescence device comprising a substrate, an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode, wherein the electron injection layer contains alkali metal nitride and has a thickness of 0.2-10 nm. The organic electroluminescence device of the present invention has improved electron injection from the cathode to the organic layer, high device luminance and efficiency, long device lifetime, low material poisonousness, wide choice of film-forming thickness and low film-forming temperature.

Abstract: The present invention relates to an organic electroluminescence device and provides a new material composition scheme for an electron injection layer. The organic electroluminescence device of the present invention includes an electron injection layer which contains a material represented by formula AxByOz, wherein A is one of an alkali metal and an alkali earth metal, B is one of group VIII metals and 0<x?2, 0<y?3, 0<z?6. A is selected from one of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr and Ba. B is selected from one of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir and Pt. The electron injection layer can be formed of Al and AxByOz. The electron injection layer has high electron injection ability, and the device has low threshold voltage, high luminance, high efficiency and long life.

Abstract: The present invention relates to a method of preparing a Li film, wherein said Li film is fabricated by directly decomposing a compound of Li under a vacuum evaporation condition, and said compound is Li3N. Said Li film is fabricated by decomposing Li3N at an evaporation rate of 0.01-0.25 nm/s and an evaporation temperature of 300-450° C., and said Li film has a thickness of 0.3-5.0 nm.

Abstract: An organic electroluminescent device includes an anode, a cathode and an organic functional layer between the anode and the cathode, in which at least one of hole injection layer, hole transport layer and electron transport layer includes a host material and an inorganic inactive material doped in the host material, and the inorganic inactive material is a halide, oxide or carbonate of metal.

Abstract: The present invention relates to an organic electroluminescent display, including a substrate, a set of anodes, an organic functional layer, a set of cathodes and a packaging sheet, wherein a set of electrode leads are disposed on the packaging sheet for electrical connection with a control circuit of the display, and the electrode leads includes a set of anode leads and a set of cathode leads which are electrically connected with the corresponding anodes and cathodes on the substrate, respectively. The present invention further relates to a double-sided organic electroluminescent display having the above features.

Abstract: The present invention relates to an organic electroluminescence device comprising a substrate, an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode, wherein the electron injection layer contains alkali metal nitride and has a thickness of 0.2-10 nm. The organic electroluminescence device of the present invention has improved electron injection from the cathode to the organic layer, high device luminance and efficiency, long device lifetime, low material poisonousness, wide choice of film-forming thickness and low film-forming temperature.

Abstract: The present invention relates to an organic electroluminescence device and provides a new material composition scheme for an electron injection layer. The organic electroluminescence device of the present invention includes an electron injection layer which contains a material represented by formula AxByOz, wherein A is one of an alkali metal and an alkali earth metal, B is one of group VIII metals and 0<x?2, 0<y?3, 0<z?6. A is selected from one of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr and Ba. B is selected from one of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir and Pt. The electron injection layer can be formed of Al and AxByOz. The electron injection layer has high electron injection ability, and the device has low threshold voltage, high luminance, high efficiency and long life.

Abstract: An organic light-emitting device including a transparent substrate, a first electrode layer, a second electrode layer, a hole-transporting layer, and a electron-transporting layer sandwiched between the first and second electrode layers, wherein the hole-transporting layer consists of organic multiple-quantum-well structure. The multiple-quantum-well structure has a period number of alternating layers formed of a layer of organic material A with wide energy gap and a layer of organic material B with narrow energy gap. Organic material A and organic material B are selected such that the highest occupied molecular orbital (HOMO) levels of organic material A are lower than those of organic material B and the lowest unoccupied molecular orbital (LUMO) levels of organic material A are higher than those of organic material B.

Abstract: An organic light-emitting device including a transparent substrate, a first electrode layer, a second electrode layer, a hole-transporting layer, and a electron-transporting layer sandwiched between the first and second electrode layers, wherein the hole-transporting layer consists of organic multiple-quantum-well structure. The multiple-quantum-well structure has a period number of alternating layers formed of a layer of organic material A with wide energy gap and a layer of organic material B with narrow energy gap. Organic material A and organic material B are selected such that the highest occupied molecular orbital (HOMO) levels of organic material A are lower than those of organic material B and the lowest unoccupied molecular orbital (LUMO) levels of organic material A are higher than those of organic material B.