Patents by Inventor Yudong Kim
Yudong Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10629652Abstract: Embodiments of the present disclosure describe techniques and configurations for a memory device comprising a memory array having a plurality of wordlines disposed in a memory region of a die. Fill regions may be disposed between respective pairs of adjacent wordlines of the plurality of wordlines. The fill regions may include a first dielectric layer and a second dielectric layer disposed on the first dielectric layer. The first dielectric layer may comprise organic (e.g., carbon-based) spin-on dielectric material (CSOD). The second dielectric layer may comprise a different dielectric material than the first dielectric layer, such as, for example, inorganic dielectric material. Other embodiments may be described and/or claimed.Type: GrantFiled: November 15, 2018Date of Patent: April 21, 2020Assignee: Intel CorporationInventors: Michael J. Bernhardt, Yudong Kim, Denzil S. Frost, Tuman Earl Allen, III, Kevin Lee Baker, Kolya Yastrebenetsky, Ronald Allen Weimer
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Patent number: 10522757Abstract: In various examples, dual resistive-material regions for a phase change material region are fabricated by initially forming a resistive material. Prior to forming the phase change material region over the resistive material, at least an upper portion of the resistive material is exposed to an implantation or plasma that increases the resistance of an upper portion of the resistive material relative to the remainder, or bulk, of the resistive material. As a result, in certain embodiments, the portion of the resistive material proximate to the phase change material region may be used as a heater because of a relatively, high resistance value of the resistive material, but the bulk of the resistive material has a relatively lower resistance value and, thus, does not increase the voltage drop and current usage of the device. Other methods and devices are disclosed.Type: GrantFiled: December 21, 2017Date of Patent: December 31, 2019Assignee: Micron Technology, Inc.Inventors: Yudong Kim, Ilya V Karpov, Charles C. Kuo, Maria Santina Marangon, Tyler A. Lowrey, Greg Atwood
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Patent number: 10522756Abstract: In various examples, a dual resistance heater for a phase change material region is fabricated by forming a resistive material. Prior to forming the phase change material region over the resistive material, at least an upper portion of the resistive material is exposed to an implantation or plasma that increases the resistance of an upper portion of the resistive material relative to the remainder, or bulk, of the resistive material. As a result, the portion of the resistive material proximate to the phase change material region forms a heater because of its high resistance value, but the bulk of the resistive material has a relatively lower resistance value and, thus, does not increase the voltage drop and current usage of the device. Other methods and devices are disclosed.Type: GrantFiled: February 6, 2015Date of Patent: December 31, 2019Assignee: Micron Technology, Inc.Inventors: Yudong Kim, Ilya V Karpov, Charles C. Kuo, Maria Santina Marangon, Tyler A. Lowrey, Greg Atwood
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Publication number: 20190206942Abstract: Embodiments of the present disclosure describe techniques and configurations for a memory device comprising a memory array having a plurality of wordlines disposed in a memory region of a die. Fill regions may be disposed between respective pairs of adjacent wordlines of the plurality of wordlines. The fill regions may include a first dielectric layer and a second dielectric layer disposed on the first dielectric layer. The first dielectric layer may comprise organic (e.g., carbon-based) spin-on dielectric material (CSOD). The second dielectric layer may comprise a different dielectric material than the first dielectric layer, such as, for example, inorganic dielectric material. Other embodiments may be described and/or claimed.Type: ApplicationFiled: November 15, 2018Publication date: July 4, 2019Inventors: Michael J. Bernhardt, Yudong Kim, Denzil S. Frost, Tuman Earl Allen, III, Kevin Lee Baker, Kolya Yastrebenetsky, Ronald Allen Weimer
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Patent number: 10134809Abstract: Embodiments of the present disclosure describe techniques and configurations for a memory device comprising a memory array having a plurality of wordlines disposed in a memory region of a die. Fill regions may be disposed between respective pairs of adjacent wordlines of the plurality of wordlines. The fill regions may include a first dielectric layer and a second dielectric layer disposed on the first dielectric layer. The first dielectric layer may comprise organic (e.g., carbon-based) spin-on dielectric material (CSOD). The second dielectric layer may comprise a different dielectric material than the first dielectric layer, such as, for example, inorganic dielectric material. Other embodiments may be described and/or claimed.Type: GrantFiled: June 2, 2017Date of Patent: November 20, 2018Assignee: INTEL CORPORATIONInventors: Michael J. Bernhardt, Yudong Kim, Denzil S. Frost, Tuman Earl Allen, Kevin Lee Baker, Kolya Yastrebenetsky, Ronald Allen Weimer
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Patent number: 10048539Abstract: Provided is a method of manufacturing a backlight unit of a curved display device. The method includes providing a bottom chassis having a predetermined curvature radius, manufacturing a reflection member, and disposing the reflection member on the bottom chassis.Type: GrantFiled: November 17, 2015Date of Patent: August 14, 2018Assignee: Samsung Display Co., Ltd.Inventors: Kangwoo Lee, Yudong Kim
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Publication number: 20180138406Abstract: In various examples, dual resistive-material regions for a phase change material region are fabricated by initially forming a resistive material. Prior to forming the phase change material region over the resistive material, at least an upper portion of the resistive material is exposed to an implantation or plasma that increases the resistance of an upper portion of the resistive material relative to the remainder, or bulk, of the resistive material. As a result, in certain embodiments, the portion of the resistive material proximate to the phase change material region may be used as a heater because of a relatively, high resistance value of the resistive material, but the bulk of the resistive material has a relatively lower resistance value and, thus, does not increase the voltage drop and current usage of the device. Other methods and devices are disclosed.Type: ApplicationFiled: December 21, 2017Publication date: May 17, 2018Inventors: Yudong Kim, Ilya V. Karpov, Charles C. Kuo, Maria Santina Marangon, Tyler A. Lowrey, Greg Atwood
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Publication number: 20170271412Abstract: Embodiments of the present disclosure describe techniques and configurations for a memory device comprising a memory array having a plurality of wordlines disposed in a memory region of a die. Fill regions may be disposed between respective pairs of adjacent wordlines of the plurality of wordlines. The fill regions may include a first dielectric layer and a second dielectric layer disposed on the first dielectric layer. The first dielectric layer may comprise organic (e.g., carbon-based) spin-on dielectric material (CSOD). The second dielectric layer may comprise a different dielectric material than the first dielectric layer, such as, for example, inorganic dielectric material. Other embodiments may be described and/or claimed.Type: ApplicationFiled: June 2, 2017Publication date: September 21, 2017Inventors: Michael J. Bernhardt, Yudong Kim, Denzil S. Frost, Tuman Earl Allen, III, Kevin Lee Baker, Kolya Yastrebenetsky, Ronald Allen Weimer
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Patent number: 9704923Abstract: Embodiments of the present disclosure describe techniques and configurations for a memory device comprising a memory array having a plurality of wordlines disposed in a memory region of a die. Fill regions may be disposed between respective pairs of adjacent wordlines of the plurality of wordlines. The fill regions may include a first dielectric layer and a second dielectric layer disposed on the first dielectric layer. The first dielectric layer may comprise organic (e.g., carbon-based) spin-on dielectric material (CSOD). The second dielectric layer may comprise a different dielectric material than the first dielectric layer, such as, for example, inorganic dielectric material. Other embodiments may be described and/or claimed.Type: GrantFiled: December 23, 2015Date of Patent: July 11, 2017Assignee: Intel CorporationInventors: Michael J. Bernhardt, Yudong Kim, Denzil S. Frost, Tuman Earl Allen, III, Kevin Lee Baker, Kolya Yastrebenetsky, Ronald Allen Weimer
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Publication number: 20170186815Abstract: Embodiments of the present disclosure describe techniques and configurations for a memory device comprising a memory array having a plurality of wordlines disposed in a memory region of a die. Fill regions may be disposed between respective pairs of adjacent wordlines of the plurality of wordlines. The fill regions may include a first dielectric layer and a second dielectric layer disposed on the first dielectric layer. The first dielectric layer may comprise organic (e.g., carbon-based) spin-on dielectric material (CSOD). The second dielectric layer may comprise a different dielectric material than the first dielectric layer, such as, for example, inorganic dielectric material. Other embodiments may be described and/or claimed.Type: ApplicationFiled: December 23, 2015Publication date: June 29, 2017Inventors: Michael J. Bernhardt, Yudong Kim, Denzil S. Frost, Tuman Earl Allen, III, Kevin Lee Baker, Kolya Yastrebenetsky, Ronald Allen Weimer
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Publication number: 20160207065Abstract: Provided is a method of manufacturing a backlight unit of a curved display device. The method includes providing a bottom chassis having a predetermined curvature radius, manufacturing a reflection member, and disposing the reflection member on the bottom chassis.Type: ApplicationFiled: November 17, 2015Publication date: July 21, 2016Inventors: Kangwoo Lee, Yudong Kim
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Patent number: 9203024Abstract: A phase change memory cell may include two or more stacked or unstacked series connected memory elements. The cell has a higher, adjustable threshold voltage. A copper diffusion plug may be provided within a pore over a copper line. By positioning the plug below the subsequent chalcogenide layer, the plug may be effective to block copper diffusion upwardly into the pore and into the chalcogenide material. Such diffusion may adversely affect the electrical characteristics of the chalcogenide layer.Type: GrantFiled: July 25, 2007Date of Patent: December 1, 2015Assignee: Intel CorporationInventors: Yudong Kim, Charles C. Kuo, Gianpaolo Spadini
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Patent number: 9159915Abstract: An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory.Type: GrantFiled: December 18, 2013Date of Patent: October 13, 2015Assignee: Ovonyx, Inc.Inventors: Ilya V. Karpov, Sean Jong Lee, Yudong Kim, Greg Atwood
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Publication number: 20150188050Abstract: A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.Type: ApplicationFiled: February 6, 2015Publication date: July 2, 2015Inventors: Yudong Kim, Ilya V. Karpov, Charles C. Kuo, Maria Santina Marangon, Tyler A. Lowrey, Greg Atwood
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Patent number: 8952299Abstract: A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.Type: GrantFiled: August 19, 2013Date of Patent: February 10, 2015Assignee: Micron Technology, Inc.Inventors: Yudong Kim, Ilya V Karpov, Charles C. Kuo, Greg Atwood, Maria Santina Marangon, Tyler A. Lowrey
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Publication number: 20140104939Abstract: An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory.Type: ApplicationFiled: December 18, 2013Publication date: April 17, 2014Applicant: Ovonyx, Inc.Inventors: Ilya V. Karpov, Sean Jong Lee, Yudong Kim, Greg Atwood
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Publication number: 20140038379Abstract: A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.Type: ApplicationFiled: August 19, 2013Publication date: February 6, 2014Applicant: Micron Technology, Inc.Inventors: Yudong Kim, Ilya V. Karpov, Charles C. Kuo, Greg Atwood, Maria Santina Marangon, Tyler A. Lowrey
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Patent number: 8637342Abstract: An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory.Type: GrantFiled: November 10, 2005Date of Patent: January 28, 2014Assignee: Ovonyx, Inc.Inventors: Ilya V. Karpov, Sean Jong Lee, Yudong Kim, Gregory E. Atwood
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Patent number: 8536013Abstract: Small phase change memory cells may be formed by forming a segmented heater over a substrate. A stop layer may be formed over the heater layer and segmented with the heater layer. Then, sidewall spacers may be formed over the segmented heater to define an aperture between the sidewall spacers that may act as a mask for etching the stop layer over the segmented heater. As a result of the etching using the sidewall spacers as a mask, sublithographic pore may be formed over the heater. Phase change material may be formed within the pore.Type: GrantFiled: May 24, 2011Date of Patent: September 17, 2013Assignee: STMicroelectronics S.r.l.Inventors: Yudong Kim, Fabio Pellizzer
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Patent number: 8513576Abstract: A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.Type: GrantFiled: December 28, 2010Date of Patent: August 20, 2013Assignee: Micron Technology, Inc.Inventors: Yudong Kim, Ilya V. Karpov, Charles C. Kuo, Greg Atwood, Maria Santina Marangon, Tyler Lowrey