Abstract: A high-temperature superconducting plasma thruster system, having variable temperature ranges and being applied in space, is provided. The high-temperature superconducting plasma thruster system includes: a cathode-anode assembly, a high-temperature superconducting magnet system, a supporting and adjusting platform, a power-and-gas supply and cooling system, and an obtaining control system. The cathode-anode assembly is disposed at a center of a ring of the high-temperature superconducting magnet system; the cathode-anode assembly and the high-temperature superconducting magnet system are spatially engaged with each other by the supporting and adjusting platform to form a main body of the thruster system; the power-and-gas supply and cooling system and the obtaining control system are located outside of the main body of the thruster system and are connected to the cathode-anode assembly and the high-temperature superconducting magnet system.

Abstract: A high-temperature superconducting plasma thruster system, having variable temperature ranges and being applied in space, is provided. The high-temperature superconducting plasma thruster system includes: a cathode-anode assembly, a high-temperature superconducting magnet system, a supporting and adjusting platform, a power-and-gas supply and cooling system, and an obtaining control system. The cathode-anode assembly is disposed at a center of a ring of the high-temperature superconducting magnet system; the cathode-anode assembly and the high-temperature superconducting magnet system are spatially engaged with each other by the supporting and adjusting platform to form a main body of the thruster system; the power-and-gas supply and cooling system and the obtaining control system are located outside of the main body of the thruster system and are connected to the cathode-anode assembly and the high-temperature superconducting magnet system.

Abstract: A method for predicting remaining life of electromigration failure is disclosed. The methods includes: establishing an electromigration life model of a MOS device; acquiring a normal electromigration failure lifetime ?1, based on a current density and a first environment temperature under a preset normal operating condition and the electromigration life model; acquiring a current density stress, based on a target prognostic point ?2, a second environment temperature and the electromigration life model; inputting the current density stress into a MOS device electromigration failure warning circuit based on a prognostic cell; and if the prognostic circuit of EM failure for a MOS device outputs a high level after a time ?3, acquiring a remaining life of electromigration failure corresponding to ?2? based on ?1, ?2 and ?3. A device for remaining life prediction for electromigration failure is also disclosed.

Abstract: An on-chip TDDB degradation monitoring and failure early warning circuit for SoC. A control circuit module converts Q1 and Q0 signals into a switch state control signal and outputs the switch state control signal to a digital conversion module for TDDB performance degradation. A MOS transistor of a first MOS transistor circuit within the digital conversion module for TDDB performance degradation is in a stress state of a supply voltage, and a MOS transistor of a second MOS transistor circuit is in a non-stress state. The first and second MOS transistor circuits output a first frequency value and a second frequency value to the output selection module. The output selection module outputs the first frequency value from the digital conversion module to the counter B for recording, or outputs the second frequency value to the counter A for recording. The counter module determines the degradation level of TDDB performance.

Abstract: The present disclosure relates to a system and method for health monitoring and early warning for an electronic device. A sensor is used to monitor a physical parameter of a circuit board of a host electronic system of the electronic device to acquire sensor data, and transmit the acquired sensor data to an embedded control device. The sensor data includes at least one of current data, vibration data, temperature data and voltage data. The embedded control device is used to extract a feature from the sensor data to acquire feature data, and perform real-time analysis and prediction based on the feature data to obtain and display a prediction result. In this way, the user can be provided with real-time health monitoring and real-time prediction information for the host electronic system circuit board.

Abstract: An on-chip TDDB degradation monitoring and failure early warning circuit for SoC. A control circuit module converts Q1 and Q0 signals into a switch state control signal and outputs the switch state control signal to a digital conversion module for TDDB performance degradation. A MOS transistor of a first MOS transistor circuit within the digital conversion module for TDDB performance degradation is in a stress state of a supply voltage, and a MOS transistor of a second MOS transistor circuit is in a non-stress state. The first and second MOS transistor circuits output a first frequency value and a second frequency value to the output selection module. The output selection module outputs the first frequency value from the digital conversion module to the counter B for recording, or outputs the second frequency value to the counter A for recording. The counter module determines the degradation level of TDDB performance.

Abstract: The present disclosure relates to a system and method for health monitoring and early warning for an electronic device. A sensor is used to monitor a physical parameter of a circuit board of a host electronic system of the electronic device to acquire sensor data, and transmit the acquired sensor data to an embedded control device. The sensor data includes at least one of current data, vibration data, temperature data and voltage data. The embedded control device is used to extract a feature from the sensor data to acquire feature data, and perform real-time analysis and prediction based on the feature data to obtain and display a prediction result. In this way, the user can be provided with real-time health monitoring and real-time prediction information for the host electronic system circuit board.

Abstract: A method for predicting remaining life of electromigration failure is disclosed. The methods includes: establishing an electromigration life model of a MOS device; acquiring a normal electromigration failure lifetime ?1, based on a current density and a first environment temperature under a preset normal operating condition and the electromigration life model; acquiring a current density stress, based on a target prognostic point ?2, a second environment temperature and the electromigration life model; inputting the current density stress into a MOS device electromigration failure warning circuit based on a prognostic cell; and if the prognostic circuit of EM failure for a MOS device outputs a high level after a time ?3, acquiring a remaining life of electromigration failure corresponding to ?2? based on ?1, ?2 and ?3. A device for remaining life prediction for electromigration failure is also disclosed.

Abstract: A method for predicting remaining life of electromigration failure is disclosed. The methods includes: establishing an electromigration life model of a MOS device; acquiring a normal electromigration failure lifetime ?1, based on a current density and a first environment temperature under a preset normal operating condition and the electromigration life model; acquiring a current density stress, based on a target prognostic point ?2, a second environment temperature and the electromigration life model; inputting the current density stress into a MOS device electromigration failure warning circuit based on a prognostic cell; and if the prognostic circuit of EM failure for a MOS device outputs a high level after a time ?3, acquiring a remaining life of electromigration failure corresponding to ?2? based on ?1, ?2 and ?3. A device for remaining life prediction for electromigration failure is also disclosed.

Abstract: A prognostic circuit of EM failure for IC is disclosed, which includes a current monitoring module, the current monitoring module includes a current output module electrically connected with a monitoring metal wire, and one or more conductive metals covered by an oxide layer and electrically insulated with the monitoring metal wire, the current output module includes at least one current source, the conductive metal is electrically connected with the output port of the current monitoring module, and the monitoring metal wire is surrounded by the conductive metal. The above prognostic circuit can give a warning for short-circuit failure caused by a whisker created by EM. Meanwhile, the prognostic circuit of the present disclosure can also be added a resistance warning, and it can indicate the failure of the resistance increased by EM and the short circuit caused by whisker, so as to greatly increase the warning efficiency of the EM.

Abstract: A method for predicting remaining life of electromigration failure is disclosed. The methods includes: establishing an electromigration life model of a MOS device; acquiring a normal electromigration failure lifetime ?1, based on a current density and a first environment temperature under a preset normal operating condition and the electromigration life model; acquiring a current density stress, based on a target prognostic point ?2, a second environment temperature and the electromigration life model; inputting the current density stress into a MOS device electromigration failure warning circuit based on a prognostic cell; and if the prognostic circuit of EM failure for a MOS device outputs a high level after a time ?3, acquiring a remaining life of electromigration failure corresponding to ?2? based on ?1, ?2 and ?3. A device for remaining life prediction for electromigration failure is also disclosed.

Abstract: A prognostic circuit of EM failure for IC is disclosed, which includes a current monitoring module, the current monitoring module includes a current output module electrically connected with a monitoring metal wire, and one or more conductive metals covered by an oxide layer and electrically insulated with the monitoring metal wire, the current output module includes at least one current source, the conductive metal is electrically connected with the output port of the current monitoring module, and the monitoring metal wire is surrounded by the conductive metal. The above prognostic circuit can give a warning for short-circuit failure caused by a whisker created by EM. Meanwhile, the prognostic circuit of the present disclosure can also be added a resistance warning, and it can indicate the failure of the resistance increased by EM and the short circuit caused by whisker, so as to greatly increase the warning efficiency of the EM.