Patents by Inventor Yue-Feng Cheu

Yue-Feng Cheu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating an oxynitride layer having anti-reflective properties and low leakage current
    Patent number: 6153541
    Abstract: A method for fabricating an anti-reflective coating (ARC) with a leakage current of less than 1.0 pA/cm.sup.2 at a voltage of about 10 V. The ARC is formed by depositing a silicon oxynitride film over a semiconductor substrate using a plasma enhanced chemical vapor deposition process. To obtain a silicon oxynitride layer having n and k values appropriate for use as an Anti-Reflection Coating (ARC) and having leakage current appropriate for use as an etch-stop or CMP-stop and dielectric layer in a subsequently formed device, it is crucial to have a SiH.sub.4 to N.sub.2 O ratio less than 2.5 and an RF power greater than 120 W.
    Type: Grant
    Filed: February 23, 1999
    Date of Patent: November 28, 2000
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Liang-Gi Yao, Yue-Feng Cheu, Keng-Chu Lin