Abstract: A system for use with a direct current fast-charging (DCFC) station includes a controller and battery system. The battery system includes first and second battery packs, and first, second, and third switches. The switches have ON/OFF conductive states commanded by the controller to connect the battery packs in a parallel-connected (P-connected) or series-connected (S-connected) configuration. An electric powertrain with one or more electric machines is powered via the battery system. First and second charge ports of the system are connectable to the station via a corresponding charging cable. The first charge port receives a low or high charging voltage from the station. The second charge port receives a low charging voltage. When the station can supply the high charging voltage to the first charge port, the controller establishes the S-connected configuration via the switches, and thereafter charges the battery system solely via the first charge port.

Abstract: A gas extraction device for metal mineral inclusions and a gas extraction method therefor are provided, the device includes a base plate, an annular carrier, sealing covers, a grinding assembly, a vacuum assembly, a gas-gathering assembly and a mass spectrometer. The annular carrier is disposed on the base plate, multiple grinding chambers are defined and evenly distributed in a circular shape on the annular carrier, the sealing covers are disposed at openings of the grinding chambers, the grinding assembly includes grinding hammers, and the grinding hammers penetrate through the sealing covers and extend into the grinding chambers. Side walls of each grinding chamber defines a first through hole and a second through hole. The vacuum assembly is communicated with the grinding chambers through the first through holes. The gas-gathering assembly is communicated with the grinding chambers through the second through holes. The mass spectrometer is communicated with the gas-gathering assembly.

Abstract: This invention relates to the fields of mRNA vaccines, mRNA therapy, and gene therapy and specifically to the use of gene expression vectors or PCR amplicons containing various 5?UTR sequences followed by coding sequences for in vitro and in vivo production of mRNA or proteins of interest.

Abstract: A synchronization method for multi-channel signals, a power supply module, an electronic device, and a power supply device. In the synchronization method for multi-channel signals, a first power supply module (700) is connected to a plurality of mutually isolated second power supply modules (800), allocates target data information and a target duration to each of the second power supply modules (800) according to total data information input by a user; and then the first power supply module (700) synchronously transmits a clock signal to each of the second power supply modules (800), so as to trigger each of the second power supply modules (800) to synchronously output a data signal corresponding to the target data information, and to control an output duration of the data signal to be equal to the target duration.

Abstract: A method for manufacturing a fuel spray nozzle for a gas turbine engine includes forming a first section of the fuel spray nozzle by additive layer manufacturing. The first section includes a main chamber and internal passageways. The method includes forming a second section of the fuel spray nozzle by additive layer manufacturing on the first section. The second section includes a metering feature disposed in fluid communication with one of the internal passageways of the first section. The method includes modifying the metering feature of the second section by a first subtractive manufacturing process to obtain a desired diameter of the metering feature and/or a desired surface roughness of the metering feature. The method includes forming a third section of the fuel spray nozzle by additive layer manufacturing on the second section. The third section includes a deflector and a spin chamber.

Abstract: An example method includes receiving, at a module management unit (MMU) associated with a battery cell, a battery cell parameter measurement associated with the battery cell. The MMU in is communication with a battery radio frequency module via a first link. The method further includes performing, by the MMU, a first function based at least in part on the battery cell parameter measurement to generate a first signal, and transmitting, from the MMU, the first signal to the battery radio frequency module via the first link. The method further includes performing, by the battery radio frequency module, a second function based at least in part on the first signal to generate a second signal. The method further includes transmitting, from the battery radio frequency module, the second signal to a controller, and performing, by the controller, a third function based at least in part on the second signal.

Abstract: The disclosure provides a method of log level setting at a first component in a remote computing environment. The method generally includes receiving a requested log level for one or more requested features, wherein the one or more requested features comprise a subset of features of the first component, obtaining a configuration file for the one or more requested features, parsing the configuration file obtained for the one or more requested features to create a log level dependency map, and setting a log level for one or more of the features of the first component based on the requested log level and the log level dependency map, wherein setting the log level comprises setting the log level for at least the one or more requested features.

Abstract: A process and a device for continuous micromixing of two fluids is disclosed. The process and the device can be used in particular when micromixing plays an important role, for example, in the yield and characteristics of the products. This is the case for crystallization, precipitation and combustion reactions and for micelle assembly or polyelectrolyte complexation processes.

Abstract: A method and system for positioning and correcting visual data by seafloor topographic profiles are provided. The method includes: offsetting the water-depth profile of the target survey line equidistantly in a grid layer of a target area to make profiles generated after the offsetting traverse the grid layer of the target area, and obtaining offset data sequences corresponding to the water-depth profile of the target survey line; drawing offset topographic profiles based on offset data of the offset data sequences corresponding to the water-depth profile of the target survey line; calculating a profile similarity between the water-depth profile of the target survey line and each of the offset topographic profiles by using a dynamic time warping (DTW) algorithm; and selecting a geographic location of one of the offset topographic profiles with a largest profile similarity as an actual geographic location of a water-depth profile of a seafloor visual survey line.

Abstract: Disclosed are a low-temperature processing method for improving a 4H—SiC/SiO2 interface based on a supercritical oxynitride, and use thereof. The method includes: performing standard cleaning on a silicon carbide sample to be processed; performing dry-oxygen oxidation on the cleaned silicon carbide sample to grow an oxide layer; placing the silicon carbide sample having the oxide layer on a support in a steady-state supercritical chamber; controlling a pressure and injecting nitrogen-oxygen gas into the supercritical device; increasing a temperature in the supercritical device from 23° C. to 500° C.; maintaining the above supercritical state until the processing ends; reducing a temperature of a reactor to room temperature after reaction ends, reducing the pressure to an atmospheric pressure, and taking out the reactor. The present disclosure allows for effective and quick decrease in the 4H—SiC/SiO2 interface state density, and also a significant decrease in the processing temperature.

Abstract: A low turn-on voltage GaN diode having an anode metal with a consistent crystal orientation and a preparation method thereof. The low turn-on voltage GaN diode having an anode metal with a consistent crystal orientation provided by the present disclosure includes a substrate layer, a GaN buffer layer, a GaN channel layer and an AlGaN barrier layer, which are arranged in sequence from bottom to top; a cathode arranged on the AlGaN barrier layer; a groove arranged in the GaN channel layer and the AlGaN barrier layer, and an anode provided on a bottom and a side wall of the groove and part of the AlGaN barrier layer; a dielectric layer provided on an uncovered portion of the AlGaN barrier layer; wherein, a contact portion of the anode with the groove and the AlGaN barrier layer is W or Mo metal with a crystal orientation of <100>.

Abstract: A bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor, which mainly solves a problem that the existing monolithic heterogeneous integrated Cascode-structure field effect transistor has no reverse blocking characteristic. The field effect transistor includes a substrate, a GaN buffer layer, an AlGaN barrier layer and a SiN isolation layer, wherein an isolation groove is etched in the middle of the SiN isolation layer, a Si active layer is printed on the SiN isolation layer on one side of the isolation groove so as to prepare a Si metal oxide semiconductor field effect transistor, and a GaN high-electron-mobility transistor is prepared on the other side of the isolation groove, and a drain electrode of the GaN high-electron-mobility transistor is in Schottky contact with the AlGaN barrier layer to form a bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor.

Abstract: The present invention provides to a system and a method for generating a performance value of a process module, such that the process module includes a plurality of sub-process modules, such that the process module is categorised into a category of a plurality of categories. The method includes retrieving a performance value for each of the plurality of sub-process modules, retrieving the category of the process module, generating the performance value of the process module based on the category of the process module, such that the performance value of the process module is generated from the performance values of the plurality of sub-process modules. Further, the present invention relates to a system and a method for identifying at least one bottleneck in a process module.

Abstract: A material structure for silicon-based gallium nitride microwave and millimeter-wave devices and a manufacturing method thereof are provided. The material structure includes: a silicon substrate; a dielectric layer of high thermal conductivity, disposed on an upper surface of the silicon substrate, and an uneven first patterned interface being formed between the dielectric layer and the silicon substrate; a buffer layer, disposed on an upper surface of the dielectric layer, and an uneven second patterned interface being formed between the buffer layer and the dielectric layer; a channel layer, disposed on an upper surface of the buffer layer; and a composite barrier layer, disposed on an upper surface of the channel layer. In the material structure, the uneven patterned interfaces increase contact areas of the interfaces, a thermal boundary resistance and a thermal resistance of device are reduced, and a heat dissipation performance of device is improved.

Abstract: The present disclosure relates to the field of genetic engineering, in particular to a method for overexpressing IL-15 in porcine skeletal myoblasts and use thereof. In the present disclosure, the porcine IL-15 gene is transferred into the lentiviral vector and then the lentiviral vector is transferred into the porcine skeletal myoblasts, so that IL-15 is successfully overexpressed in the porcine skeletal myoblasts. The method for overexpressing IL-15 provided by the present disclosure solves the problem that IL-15 needs to be added multiple times and the steps are complicated in the traditional research process. The present disclosure demonstrates that overexpression of IL-15 has a regulating effect on proliferation, cell apoptosis, anti-oxidation capacity of the porcine skeletal myoblasts, which charts a course for further study of IL-15.

Abstract: A method for preparing an AlN based template having a Si substrate and a method for preparing a GaN based epitaxial structure having a Si substrate are provided. The method for preparing the AlN based template having the Si substrate, which includes: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; and introducing an ion passing through the AlN nucleation layer and into the Si substrate. After the AlN nucleation layer is prepared on the Si substrate, the ions are introduced into the Si substrate and the AlN nucleation layer through the AlN nucleation layer. In this way, types of the introduced ions can be expanded. In addition, a carrier concentration at an interface between the Si substrate and the AlN nucleation layer and a carrier concentration in the AlN nucleation layer can also be reduced.

Abstract: A bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor, which mainly solves a problem that the existing monolithic heterogeneous integrated Cascode-structure field effect transistor has no reverse blocking characteristic. The field effect transistor includes a substrate, a GaN buffer layer, an AlGaN barrier layer and a SiN isolation layer, wherein an isolation groove is etched in the middle of the SiN isolation layer, a Si active layer is printed on the SiN isolation layer on one side of the isolation groove so as to prepare a Si metal oxide semiconductor field effect transistor, and a GaN high-electron-mobility transistor is prepared on the other side of the isolation groove, and a drain electrode of the GaN high-electron-mobility transistor is in Schottky contact with the AlGaN barrier layer to form a bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor.

Abstract: A high electron mobility transistor (HEMT) device is provided. The HEMT device includes a substrate layer, a buffer layer, a barrier layer, and a metallic electrode layer sequentially arranged in that order from bottom to top. The metallic electrode layer includes a source electrode, a gate electrode and a drain electrode sequentially arranged in that order from left to right. The barrier layer may include m number of fluorine-doped regions arranged in sequence, where m is a positive integer and m?2. The HEMT device can realize a relative stability of transconductance in a large range of a gate-source-bias through mutual compensation of transconductances in the fluorine-doped regions with different fluorine-ion concentrations of the barrier layer under the gate electrode, and the HEMT device has a good linearity without the need of excessive adjustments of material structure and device.

Abstract: The present invention discloses an epitaxial lift-off process of graphene-based gallium nitride (GaN), and principally solves the existing problems about complex lift-off technique, high cost, and poor quality of lift-off GaN films. The invention is achieved by: first, growing graphene on a well-polished copper foil by CVD method; then, transferring a plurality of layers of graphene onto a sapphire substrate; next, growing GaN epitaxial layer on the sapphire substrate with a plurality of graphene layers transferred by the metal organic chemical vapor deposition (MOCVD) method; finally, lifting off and transferring the GaN epitaxial layer onto a target substrate with a thermal release tape. With graphene, the present invention relieves the stress generated by the lattice mismatch between substrate and epitaxial layer; moreover, the present invention readily lifts off and transfers the epitaxial layer to the target substrate by means of weak Van der Waals forces between epitaxial layer and graphene.

Abstract: The present invention discloses a method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride, and a gallium nitride thin film. The method according to an embodiment comprises: spreading graphene over a substrate; magnetron sputtering an aluminum nitrite onto the graphene-coated substrate to obtain a substrate sputtered with aluminum nitrite; placing the substrate sputtered with aluminum nitride into a MOCVD reaction chamber and heat treating the substrate to obtain a heat treated substrate; growing an aluminum nitride transition layer on the heat treated substrate and a first and a second gallium nitride layer having different V-III ratios, respectively.