Patents by Inventor Yue Qiang PU
Yue Qiang PU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11380701Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.Type: GrantFiled: December 17, 2020Date of Patent: July 5, 2022Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Yue Qiang Pu, Jin Wen Dong, Jun Chen, Zhenyu Lu, Qian Tao, Yushi Hu, Zhao Hui Tang, Li Hong Xiao, Yu Ting Zhou, Sizhe Li, Zhaosong Li
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Patent number: 11329061Abstract: A method for forming a three-dimensional memory device includes disposing a material layer over a substrate, forming a plurality of channel-forming holes and a plurality of sacrificial holes around the plurality of channel-forming holes in an array-forming region of the material layer, and forming a plurality of semiconductor channels based on the channel-forming holes and at least one gate line slit (GLS) based on at least one of the plurality of sacrificial holes. A location of the at least one GLS overlaps with the at least one of the plurality of sacrificial holes.Type: GrantFiled: September 10, 2018Date of Patent: May 10, 2022Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Li Hong Xiao, Qian Tao, Yushi Hu, Xiao Tian Cheng, Jian Xu, Haohao Yang, Yue Qiang Pu, Jin Wen Dong
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Patent number: 11271004Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.Type: GrantFiled: December 14, 2020Date of Patent: March 8, 2022Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Yue Qiang Pu, Jin Wen Dong, Jun Chen, Zhenyu Lu, Qian Tao, Yushi Hu, Zhao Hui Tang, Li Hong Xiao, Yu Ting Zhou, Sizhe Li, Zhaosong Li
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Patent number: 11211393Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.Type: GrantFiled: December 8, 2020Date of Patent: December 28, 2021Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Yue Qiang Pu, Jin Wen Dong, Jun Chen, Zhenyu Lu, Qian Tao, Yushi Hu, Zhao Hui Tang, Li Hong Xiao, Yu Ting Zhou, Sizhe Li, Zhaosong Li
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Patent number: 11205662Abstract: Embodiments of 3D memory devices with a dielectric etch stop layer and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. The method includes forming a dielectric etch stop layer. The dielectric etch stop is disposed on a substrate. The method also includes forming a dielectric stack on the dielectric etch stop layer. The dielectric stack includes a plurality of interleaved dielectric layers and sacrificial layers. The method further includes forming an opening extending vertically through the dielectric stack and extending the opening through the dielectric etch stop layer. In addition, the method includes forming a selective epitaxial growth (SEG) plug at a lower portion of the opening. The SEG plug is disposed on the substrate. Moreover, the method includes forming a channel structure above and in contact with the SEG plug in the opening.Type: GrantFiled: August 14, 2020Date of Patent: December 21, 2021Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.Inventors: Fandong Liu, Wenyu Hua, Jia He, Linchen Wu, Yue Qiang Pu, Zhiliang Xia
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Publication number: 20210118896Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.Type: ApplicationFiled: December 8, 2020Publication date: April 22, 2021Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Yue Qiang PU, Jin Wen Dong, Jun Chen, Zhenyu Lu, Qian Tao, Yushi Hu, Zhao Hui Tang, Li Hong Xiao, Yu Ting Zhou, Sizhe Li, Zhaosong Li
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Publication number: 20210104532Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.Type: ApplicationFiled: December 17, 2020Publication date: April 8, 2021Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Yue Qiang PU, Jin Wen DONG, Jun CHEN, Zhenyu LU, Qian TAO, Yushi HU, Zhao Hui TANG, Li Hong XIAO, Yu Ting ZHOU, Sizhe LI, Zhaosong LI
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Publication number: 20210098481Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.Type: ApplicationFiled: December 14, 2020Publication date: April 1, 2021Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Yue Qiang PU, Jin Wen DONG, Jun CHEN, Zhenyu LU, Qian TAO, Yushi HU, Zhao Hui TANG, Li Hong XIAO, Yu Ting ZHOU, Sizhe LI, Zhaosong LI
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Patent number: 10910390Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.Type: GrantFiled: July 26, 2018Date of Patent: February 2, 2021Assignee: Yangtze Memory Technologies Co., Ltd.Inventors: Yue Qiang Pu, Jin Wen Dong, Jun Chen, Zhenyu Lu, Qian Tao, Yushi Hu, Zhao Hui Tang, Li Hong Xiao, Yu Ting Zhou, Sizhe Li, Zhaosong Li
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Publication number: 20200381451Abstract: Embodiments of 3D memory devices with a dielectric etch stop layer and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. The method includes forming a dielectric etch stop layer. The dielectric etch stop is disposed on a substrate. The method also includes forming a dielectric stack on the dielectric etch stop layer. The dielectric stack includes a plurality of interleaved dielectric layers and sacrificial layers. The method further includes forming an opening extending vertically through the dielectric stack and extending the opening through the dielectric etch stop layer. In addition, the method includes forming a selective epitaxial growth (SEG) plug at a lower portion of the opening. The SEG plug is disposed on the substrate. Moreover, the method includes forming a channel structure above and in contact with the SEG plug in the opening.Type: ApplicationFiled: August 14, 2020Publication date: December 3, 2020Inventors: Fandong Liu, Wenyu Hua, Jia He, Linchen Wu, Yue Qiang Pu, Zhiliang Xia
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Patent number: 10784279Abstract: Embodiments of 3D memory devices with a dielectric etch stop layer and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a dielectric etch stop layer disposed on the substrate, a memory stack disposed on the dielectric etch stop layer and including a plurality of interleaved conductor layers and dielectric layers, and a plurality of memory strings each extending vertically through the memory stack and including a selective epitaxial growth (SEG) plug in a bottom portion of the memory string. The SEG plug is disposed on the substrate.Type: GrantFiled: November 17, 2018Date of Patent: September 22, 2020Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.Inventors: Fandong Liu, Wenyu Hua, Jia He, Linchen Wu, Yue Qiang Pu, Zhiliang Xia
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Publication number: 20200111808Abstract: Embodiments of 3D memory devices with a dielectric etch stop layer and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a dielectric etch stop layer disposed on the substrate, a memory stack disposed on the dielectric etch stop layer and including a plurality of interleaved conductor layers and dielectric layers, and a plurality of memory strings each extending vertically through the memory stack and including a selective epitaxial growth (SEG) plug in a bottom portion of the memory string. The SEG plug is disposed on the substrate.Type: ApplicationFiled: November 17, 2018Publication date: April 9, 2020Inventors: Fandong Liu, Wenyu Hua, Jia He, Linchen Wu, Yue Qiang Pu, Zhiliang Xia
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Publication number: 20190326308Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.Type: ApplicationFiled: July 26, 2018Publication date: October 24, 2019Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Yue Qiang PU, Jin Wen Dong, Jun Chen, Zhenyu Lu, Qian Tao, Yushi Hu, Zhao Hui Tang, Li Hong Xiao, Yu Ting Zhou, Sizhe Li, Zhaosong Li
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Publication number: 20190074290Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, a method for forming a three-dimensional memory device includes disposing a material layer over a substrate, forming a plurality of channel-forming holes and a plurality of sacrificial holes around the plurality of channel-forming holes in an array-forming region of the material layer, and forming a plurality of semiconductor channels based on the channel-forming holes and at least one gate line slit (GLS) based on at least one of the plurality of sacrificial holes. A location of the at least one GLS overlaps with the at least one of the plurality of sacrificial holes.Type: ApplicationFiled: September 10, 2018Publication date: March 7, 2019Applicant: Yangtze Memory Technologies Co., Ltd.Inventors: Li Hong XIAO, Qian TAO, Yushi HU, Xiao Tian CHENG, Jian XU, Haohao YANG, Yue Qiang PU, Jin Wen DONG