Abstract: A chip package includes a chip, an isolation layer on the bottom surface and the sidewall, a redistribution layer that is on the isolation layer and in electrical contact with a side surface of the conductive pad, and a passivation layer. The chip has a sensor, at least one conductive pad, a top surface, a bottom surface, and a sidewall. The sensor is located on the top surface. The conductive pad is located on an edge of the top surface. The redistribution layer at least partially protrudes from the conductive pad so as to be exposed. The passivation layer is located on the isolation layer and the redistribution layer, such that the redistribution layer not protruding from the conductive pad is between the passivation layer and the isolation layer, and the redistribution layer protruding from the conductive pad is located on the passivation layer.

Abstract: The invention discloses a novel method to prepare the Ni(Sn, Sb)3 skutterudite compound. Skutterudite compounds are thermoelectric materials, which can transform heat into electric energy. Besides, the Ni(Sn, Sb)3 compound is also an anode material of Li ion battery. The solid state diffusion method is used to prepare the Ni(Sn1-x, Sbx)3 compound. Compared to traditional physical or chemical processes, the method disclosed in the invention is simpler and operates at a lower temperature. By the method according to the invention, the composition of the Ni(Sn, Sb)3 compound can be adjusted to fulfill variety requirements for different applications. It is noteworthy that the invention can prepare ternary compounds. In comparison with the frequently used binary compounds such as Ni3Sn4 or Cu6Sn5, the invention can produce materials with better performance.

Abstract: The invention discloses a novel method to prepare the Ni(Sn, Sb)3 skutterudite compound. Skutterudite compounds are thermoelectric materials, which can transform heat into electric energy. Besides, the Ni(Sn, Sb)3 compound is also an anode material of Li ion battery. The solid state diffusion method is used to prepare the Ni(Sn1-x, Sbx)3 compound. Compared to traditional physical or chemical processes, the method disclosed in the invention is simpler and operates at a lower temperature. By the method according to the invention, the composition of the Ni(Sn, Sb)3 compound can be adjusted to fulfill variety requirements for different applications. It is noteworthy that the invention can prepare ternary compounds. In comparison with the frequently used binary compounds such as Ni3Sn4 or Cu6Sn5, the invention can produce materials with better performance.