Abstract: A voltage contrast defect analysis method including the following steps is provided. A voltage contrast defect detection is performed on a die to be tested by using an electron beam inspection machine to find out a defect address of a voltage contrast defect. A first scanning electron microscope image at the defect address of the die to be tested is obtained by using a scanning electron microscope. A first critical dimension of the first scanning electron microscope image at the defect address of the die to be tested is measured. The first critical dimension on the die to be tested is compared with a corresponding second critical dimension on a reference die where no voltage contrast defect occurs at the defect address to determine whether the first critical dimension and the second critical dimension are the same.

Abstract: A defect identification method and an image analysis system are provided. The defect identification method includes the following steps: adjusting a gray level distribution of a first image corresponding to a reference image of a defect on a wafer to generate a second image; capturing a defect of interest image in the second image; analyzing a plurality of pixels of the defect of interest image to obtain a minimum gray level value of the pixels; analyzing the pixels of the second image according to the minimum gray level value, so as to obtain a number of defect of interest pixels and a number of non-defect of interest pixels; dividing the number of defect of interest pixels by the number of non-defect of interest pixels to obtain a proportional value; and determining a defect type of the defect in the first image according to the proportional value.

Abstract: A voltage contrast defect analysis method including the following steps is provided. A voltage contrast defect detection is performed on a die to be tested by using an electron beam inspection machine to find out a defect address of a voltage contrast defect. A first scanning electron microscope image at the defect address of the die to be tested is obtained by using a scanning electron microscope. A first critical dimension of the first scanning electron microscope image at the defect address of the die to be tested is measured. The first critical dimension on the die to be tested is compared with a corresponding second critical dimension on a reference die where no voltage contrast defect occurs at the defect address to determine whether the first critical dimension and the second critical dimension are the same.

Abstract: A defect identification method and an image analysis system are provided. The defect identification method includes the following steps: adjusting a gray level distribution of a first image corresponding to a reference image of a defect on a wafer to generate a second image; capturing a defect of interest image in the second image; analyzing a plurality of pixels of the defect of interest image to obtain a minimum gray level value of the pixels; analyzing the pixels of the second image according to the minimum gray level value, so as to obtain a number of defect of interest pixels and a number of non-defect of interest pixels; dividing the number of defect of interest pixels by the number of non-defect of interest pixels to obtain a proportional value; and determining a defect type of the defect in the first image according to the proportional value.