Abstract: The present invention provides a phase-change storage unit for replacing DRAM and FLASH and a manufacturing method thereof, and the phase-change storage unit includes a phase-change material layer and a cylindrical lower electrode being in contact with and located below the phase-change material layer, where the phase-change material layer is formed by connecting a side wall layer and a round bottom layer, forms a hollow cylinder or hollow inverted conical frustum having an opening at an upper part, and the hollow cylinder or hollow inverted conical frustum is internally filled with a medium layer.

Abstract: The present invention provides a phase-change storage unit containing a TiSiN material layer and a method for preparing the same. The phase-change storage unit includes a phase-change material layer and a lower electrode located there below, the phase-change material layer and the lower electrode are connected by a TiSiN material layer, the lower electrode includes a bottom and a sheet side connected to the bottom, the sheet side is perpendicular to the bottom to form a blade structure, and the top of the sheet side contacts the TiSiN material layer. The present invention adopts annealing to increase the grain size of the electrode so as to reduce the overall resistance of the device and form a TiSiN material layer on the top of the lower electrode so as to reduce the effective operation region. The phase-change storage unit of the present invention is applied to a phase-change memory to achieve the advantages such as low power consumption, high density and high data retention performance.

Abstract: The present invention provides a phase-change storage unit containing a TiSiN material layer and a method for preparing the same. The phase-change storage unit includes a phase-change material layer and a lower electrode located there below, the phase-change material layer and the lower electrode are connected by a TiSiN material layer, the lower electrode includes a bottom and a sheet side connected to the bottom, the sheet side is perpendicular to the bottom to form a blade structure, and the top of the sheet side contacts the TiSiN material layer. The present invention adopts annealing to increase the grain size of the electrode so as to reduce the overall resistance of the device and form a TiSiN material layer on the top of the lower electrode so as to reduce the effective operation region. The phase-change storage unit of the present invention is applied to a phase-change memory to achieve the advantages such as low power consumption, high density and high data retention performance.

Abstract: The present invention provides a phase-change storage unit for replacing DRAM and FLASH and a manufacturing method thereof, and the phase-change storage unit includes a phase-change material layer and a cylindrical lower electrode being in contact with and located below the phase-change material layer, where the phase-change material layer is formed by connecting a side wall layer and a round bottom layer, forms a hollow cylinder or hollow inverted conical frustum having an opening at an upper part, and the hollow cylinder or hollow inverted conical frustum is internally filled with a medium layer.