Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure formed over a fin structure, and a source/drain (S/D) epitaxial layer formed in the fin structure and adjacent to the gate structure. The semiconductor structure also includes a S/D silicide layer formed on the S/D epitaxial layer, and the S/D silicide layer has a first width, the S/D epitaxial layer has a second width, and the first width is smaller than the second width. The semiconductor structure includes a dielectric spacer between the gate structure and the S/D silicide layer, and a top surface of the dielectric spacer is lower than a top surface of the gate structure.

Abstract: A graphene filtering sheet is disclosed. The sheet includes a reduced grapheme oxide (r-GO) dispersed in a polymer with the reduced grapheme oxide (r-GO) having a chemical structure with C/O ratio ranging from 0.1 to 50. The reduced grapheme oxide is obtained via hydrothermal method. The graphene filtering sheet has a capacity of separating alcohol from water with an efficiency approximated to 100%.