Abstract: Provided are: a method for producing a quantum dot dispersion enabling formation of a substrate having quantum dots or a film comprising quantum dots which exhibits desired quantum dots, when the quantum dot dispersion is used for dispersing quantum dots on a surface of the substrate or preparing a composition for producing the film containing quantum dots, and a quantum dot dispersion that can be suitably produced by the above method. The quantum dot dispersion is produced by using quantum dots containing chalcogenide as a material of surface and dispersing the quantum dots (A) in the dispersion medium (B) comprising an organic solvent (B1) comprising a chalcogen element.

Abstract: Provided are: a method for producing a quantum dot-containing film enabling formation of a quantum dot-containing film exhibiting desired quantum yield; and a composition for producing a quantum dot-containing film suitably used for the method. In a method for producing a quantum dot-containing film using a composition including quantum dots (A) containing a chalcogenide as a surface material, a base component (C), and a solvent (S), a heating step to heat a quantum dot-containing film in an atmosphere with a lower oxygen concentration than air is conducted.

Abstract: A homogeneous coating solution for forming a light-absorbing layer of a solar cell, the homogeneous solution including: at least one metal or metal compound selected from the group consisting of a group 11 metal, a group 13 metal, a group 11 metal compound and a group 13 metal compound; a Lewis base solvent; and a Lewis acid.

Abstract: A homogeneous coating solution for forming a light-absorbing layer of a solar cell, the homogeneous solution including: at least one metal or metal compound selected from the group consisting of a group 11 metal, a group 13 metal, a group 11 metal compound and a group 13 metal compound; a Lewis base solvent; and a Lewis acid.

Abstract: A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.

Abstract: A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.

Abstract: An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.

Abstract: An ink composition, a thin film solar cell and method for forming the thin film solar cell are disclosed. The ink composition includes a solvent system, a source of Cu, a source of Zn, a source of Sn, a source of S and/or Se, and a source of group III element, wherein the ink composition is adapted in forming a I-II-IV-VI thin film solar cell to increase a fill factor of the I-II-IV-VI thin film solar cell.

Abstract: A photovoltaic device including a CZTS absorber layer and method for manufacturing the same are disclosed. The photovoltaic device includes a substrate, a bottom electrode, an absorber layer formed on the bottom electrode, a buffer layer formed on the absorber layer and a top electrode layer formed on the buffer layer. The absorber layer includes a first region adjacent to the bottom electrode and a second region adjacent to the first region. Both of the first region and the second region include a formula of Cua(Zn1-bSnb)(Se1-cSc)2, wherein 0<a<1, 0<b<1, 0?c?1 and a Zn/Sn ratio of the first region is higher than that of the second region.

Abstract: An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.

Abstract: A method for forming a chalcogenide semiconductor film and a photovoltaic device using the chalcogenide semiconductor film are disclosed. The method includes steps of coating a precursor solution to form a layer on a substrate and annealing the layer to form the chalcogenide semiconductor film. The precursor solution includes a solvent, metal chalcogenide nanoparticles and at least one of metal ions and metal complex ions which are distributed on surfaces of the metal chalcogenide nanoparticles. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.

Abstract: An ink composition includes a solvent system, a plurality of metal chalcogenide nanoparticles, at least one of metal ions and metal complex ions and a sodium source. The at least one of the metal ions and the metal complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent system. The sodium source is dispersed in the solvent system and/or is included in at least one of the metal chalcogenide nanoparticle, the metal ions and the metal complex ions. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III, group IV elements of periodic table, and sodium and include all metal elements of a chalcogenide semiconductor material.

Abstract: A method for forming an ink is disclosed. The method includes steps of forming at least one of metal ions and metal complex ions, forming metal chalcogenide nanoparticles, forming a first solution to include the metal chalcogenide nanoparticles and the at least one of metal ions and metal complex ions, wherein metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from group I, group II, group III or group IV of periodic table and repeating at least one forming step of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions, and forming the first solution as the ink if metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions do not include all metal elements of a chalcogenide semiconductor material.

Abstract: A method for forming a light absorption layer including the following steps is provided. A controlling precursor is wet coated on a base precursor. The band gap of the controlling precursor is larger than that of the base precursor. The controlling precursor is a Group I-III-VI compound, and the Group I-III-VI compound is composed of Cua(In1-b-cGabAlc)(Se1-dSd)2, wherein 0<a, 0?b?1, 0?c?1, 0<b+c?1, and 0?d?1. Then, a heating process is performed so as to make the base precursor and the controlling precursor form the light absorption layer.

Abstract: The present invention is related to a phosphor that can be excited by UV light between 375 to 400 nm to emit white light, which is intrinsically produced by emitting blue light with yellow light simultaneously. This compound is synthesized from organic amine, metal oxide and phosphate under hydrothermal conditions, and gives rise to a zeolitic structure with the chemical formula of (A)5-x/2[Zn9-xGaxO(HPO4)(PO4)8].yH2O (0<x<9, 0<y<15). On the other hand, when synthesized by different solvents, it is possible to obtain a phosphor of the same chemical formula and structure, but it can emit yellow light when excited by UV light or blue light emitted by LED between 300 to 500 nm.

Abstract: The present invention is related to a phosphor that can be excited by UV light between 375 to 400 nm to emit white light, which is intrinsically produced by emitting blue light with yellow light simultaneously. This compound is synthesized from organic amine, metal oxide and phosphate under hydrothermal conditions, and gives rise to a zeolitic structure with the chemical formula of (A)5-x/2[Zn9-xGaxO(HPO4)(PO4)8].yH2O (0<x<9, 0<y<15). On the other hand, when synthesized by different solvents, it is possible to obtain a phosphor of the same chemical formula and structure, but it can emit yellow light when excited by UV light or blue light emitted by LED between 300 to 500 nm.

Abstract: The present invention is related to a phosphor that can be excited by UV light between 375 to 400 nm to emit white light, which is intrinsically produced by emitting blue light with yellow light simultaneously. This compound is synthesized from organic amine, metal oxide and phosphate under hydrothermal conditions, and gives rise to a zeolitic structure with the chemical formula of (A)5?x/2[Zn9?xGaxO(HPO4)(PO4)8]·yH2O(0<x<9, 0<y <15). On the other hand, when synthesized by different solvents, it is possible to obtain a phosphor of the same chemical formula and structure, but it can emit yellow light when excited by UV light or blue light emitted by LED between 300 to 500 nm.