Abstract: This application is about a method for removing the deep trench Si-needles on a wafer. The method includes steps of forming a photoresist layer on a frontside surface of the wafer, removing a specific area of the photoresist layer for exposing the Si-needles, proceeding a first etching and a second etching, and finally removing the photoresist layer on the frontside surface of the wafer. The first etching is a wet etching for removing the Si-needles by an etching solution etching from a backside surface of the wafer back to the frontside surface of the wafer. And, the second etching is a dry etching for removing the residual silicon nitride (SiN) slices formed during the first etching.

Abstract: This application is about a method for removing the deep trench Si-needles on a wafer. The method includes steps of forming a photoresist layer on a frontside surface of the wafer, removing a specific area of the photoresist layer for exposing the Si-needles, proceeding a first etching and a second etching, and finally removing the photoresist layer on the frontside surface of the wafer. The first etching is a wet etching for removing the Si-needles by an etching solution etching from a backside surface of the wafer back to the frontside surface of the wafer. And, the second etching is a dry etching for removing the residual silicon nitride (SiN) slices formed during the first etching.

Abstract: A machine for etching the edge of a wafer comprising a rotating holding plate having a work platform, the work platform having a first fillister for spraying gas to maintain a certain distance between the work platform and the wafer, a second fillister set around the periphery of the first fillister for reducing pressure of the sprayed gas at the edge of the wafer, and a plurality of holding pins; a vacuum manipulator; and an etching solution leading apparatus.