Patents by Inventor Yueh-Yi Chen
Yueh-Yi Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11930318Abstract: An electronic device, including a first substrate, a partition wall structure, a pressurizing component, a second substrate, a shell, and multiple first conductive parts, is provided. The first substrate has a through hole, and a first surface and a second surface that are opposite to each other. The partition wall structure is disposed on the first surface and surrounds to form a first chamber. The pressurizing component is disposed on the partition wall structure and covers the first chamber. The pressurizing component includes at least a mass and a vibration membrane. The shell is disposed on the second substrate and jointly forms a second chamber with the second substrate. The first chamber is formed in the second chamber. The multiple first conductive parts are disposed between the first substrate and the second substrate. There is a gap between any two adjacent first conductive parts.Type: GrantFiled: June 23, 2021Date of Patent: March 12, 2024Assignee: Merry Electronics Co., Ltd.Inventors: Yueh-Kang Lee, Jen-Yi Chen, Kai-Yu Jiang
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Publication number: 20240079439Abstract: A pixel of an image sensor includes: a semiconductor material substrate; a photosensitive region formed in the substrate, the photosensitive region generating photo-induced electrical charge in response to illumination with light; a storage node formed in the substrate proximate to the photosensitive region, the storage node selectively receiving and storing photo-induced electrical charge generated by the photosensitive region; and a shield formed over the storage node which inhibits light from reaching the storage node, the shield including an extension which protrudes into the substrate and surrounds an outer periphery of the storage node.Type: ApplicationFiled: January 4, 2023Publication date: March 7, 2024Inventors: Chung-Yi Lin, Yueh-Chuan Lee, Chia-Chan Chen
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Publication number: 20230359131Abstract: Integrated circuits and methods for overlap measure are provided. In an embodiment, an integrated circuit includes a plurality of functional cells including at least one gap disposed adjacent to at least one functional cell of the plurality of functional cells and a first overlay test pattern cell disposed within the at least one gap, wherein the first overlay test pattern cell includes a first number of patterns disposed along a first direction at a first pitch. The first pitch is smaller than a smallest wavelength on a full spectrum of humanly visible lights.Type: ApplicationFiled: July 24, 2023Publication date: November 9, 2023Inventors: Tseng Chin Lo, Bo-Sen Chang, Yueh-Yi Chen, Chih-Ting Sun, Ying-Jung Chen, Kung-Cheng Lin, Meng Lin Chang
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Patent number: 11762302Abstract: Integrated circuits and methods for overlap measure are provided. In an embodiment, an integrated circuit includes a plurality of functional cells including at least one gap disposed adjacent to at least one functional cell of the plurality of functional cells and a first overlay test pattern cell disposed within the at least one gap, wherein the first overlay test pattern cell includes a first number of patterns disposed along a first direction at a first pitch. The first pitch is smaller than a smallest wavelength on a full spectrum of humanly visible lights.Type: GrantFiled: May 24, 2021Date of Patent: September 19, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tseng Chin Lo, Bo-Sen Chang, Yueh-Yi Chen, Chih-Ting Sun, Ying-Jung Chen, Kung-Cheng Lin, Meng Lin Chang
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Patent number: 11295990Abstract: A method includes removing a dummy gate structure formed over a first fin and a second fin, forming an interfacial layer in the first trench and the second trench, forming a first high-k dielectric layer over the interfacial layer in the first trench and the second trench, removing the first high-k dielectric layer in the second trench, forming a self-assembled monolayer over the first high-k dielectric layer in the first trench, forming a second high-k dielectric layer over the self-assembled monolayer in the first trench and over the interfacial layer in the second trench, forming a work function metal layer in the first and the second trenches, and forming a bulk conductive layer over the work function metal layer in the first and the second trenches. In some embodiments, the first high-k dielectric layer includes lanthanum and oxygen.Type: GrantFiled: January 6, 2020Date of Patent: April 5, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ju-Li Huang, Hsin-Che Chiang, Ju-Yuan Tzeng, Wei-Ze Xu, Yueh-Yi Chen, Shu-Hui Wang, Shih-Hsun Chang
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Publication number: 20210278771Abstract: Integrated circuits and methods for overlap measure are provided. In an embodiment, an integrated circuit includes a plurality of functional cells including at least one gap disposed adjacent to at least one functional cell of the plurality of functional cells and a first overlay test pattern cell disposed within the at least one gap, wherein the first overlay test pattern cell includes a first number of patterns disposed along a first direction at a first pitch. The first pitch is smaller than a smallest wavelength on a full spectrum of humanly visible lights.Type: ApplicationFiled: May 24, 2021Publication date: September 9, 2021Inventors: Tseng Chin Lo, Bo-Sen Chang, Yueh-Yi Chen, Chih-Ting Sun, Ying-Jung Chen, Kung-Cheng Lin, Meng Lin Chang
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Patent number: 11016398Abstract: Integrated circuits and methods for overlap measure are provided. In an embodiment, an integrated circuit includes a plurality of functional cells including at least one gap disposed adjacent to at least one functional cell of the plurality of functional cells and a first overlay test pattern cell disposed within the at least one gap, wherein the first overlay test pattern cell includes a first number of patterns disposed along a first direction at a first pitch. The first pitch is smaller than a smallest wavelength on a full spectrum of humanly visible lights.Type: GrantFiled: June 14, 2018Date of Patent: May 25, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tseng Chin Lo, Bo-Sen Chang, Yueh-Yi Chen, Chih-Ting Sun, Ying-Jung Chen, Kung-Cheng Lin, Meng Lin Chang
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Publication number: 20200152521Abstract: A method includes removing a dummy gate structure formed over a first fin and a second fin, forming an interfacial layer in the first trench and the second trench, forming a first high-k dielectric layer over the interfacial layer in the first trench and the second trench, removing the first high-k dielectric layer in the second trench, forming a self-assembled monolayer over the first high-k dielectric layer in the first trench, forming a second high-k dielectric layer over the self-assembled monolayer in the first trench and over the interfacial layer in the second trench, forming a work function metal layer in the first and the second trenches, and forming a bulk conductive layer over the work function metal layer in the first and the second trenches. In some embodiments, the first high-k dielectric layer includes lanthanum and oxygen.Type: ApplicationFiled: January 6, 2020Publication date: May 14, 2020Inventors: Ju-Li Huang, Hsin-Che Chiang, Ju-Yuan Tzeng, Wei-Ze Xu, Yueh-Yi Chen, Shu-Hui Wang, Shih-Hsun Chang
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Patent number: 10529629Abstract: A method includes removing a dummy gate structure formed over a first fin and a second fin, forming an interfacial layer in the first trench and the second trench, forming a first high-k dielectric layer over the interfacial layer in the first trench and the second trench, removing the first high-k dielectric layer in the second trench, forming a self-assembled monolayer over the first high-k dielectric layer in the first trench, forming a second high-k dielectric layer over the self-assembled monolayer in the first trench and over the interfacial layer in the second trench, forming a work function metal layer in the first and the second trenches, and forming a bulk conductive layer over the work function metal layer in the first and the second trenches. In some embodiments, the first high-k dielectric layer includes lanthanum and oxygen.Type: GrantFiled: April 30, 2018Date of Patent: January 7, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ju-Li Huang, Hsin-Che Chiang, Ju-Yuan Tzeng, Wei-Ze Xu, Yueh-Yi Chen, Shu-Hui Wang, Shih-Hsun Chang
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Publication number: 20190384185Abstract: Integrated circuits and methods for overlap measure are provided. In an embodiment, an integrated circuit includes a plurality of functional cells including at least one gap disposed adjacent to at least one functional cell of the plurality of functional cells and a first overlay test pattern cell disposed within the at least one gap, wherein the first overlay test pattern cell includes a first number of patterns disposed along a first direction at a first pitch. The first pitch is smaller than a smallest wavelength on a full spectrum of humanly visible lights.Type: ApplicationFiled: June 14, 2018Publication date: December 19, 2019Inventors: Tseng Chin Lo, Bo-Sen Chang, Yueh-Yi Chen, Chih-Ting Sun, Ying-Jung Chen, Kung-Cheng Lin, Meng Lin Chang
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Publication number: 20190333826Abstract: A method includes removing a dummy gate structure formed over a first fin and a second fin, forming an interfacial layer in the first trench and the second trench, forming a first high-k dielectric layer over the interfacial layer in the first trench and the second trench, removing the first high-k dielectric layer in the second trench, forming a self-assembled monolayer over the first high-k dielectric layer in the first trench, forming a second high-k dielectric layer over the self-assembled monolayer in the first trench and over the interfacial layer in the second trench, forming a work function metal layer in the first and the second trenches, and forming a bulk conductive layer over the work function metal layer in the first and the second trenches. In some embodiments, the first high-k dielectric layer includes lanthanum and oxygen.Type: ApplicationFiled: April 30, 2018Publication date: October 31, 2019Inventors: Ju-Li Huang, Hsin-Che Chiang, Ju-Yuan Tzeng, Wei-Ze Xu, Yueh-Yi Chen, Shu-Hui Wang, Shih-Hsun Chang