Abstract: The present disclosure provides a flexible microwave power transistor and a preparation method thereof. In view of great lattice mismatch and poor performance of a device prepared with a Si substrate in an existing preparation method, the preparation method of the present disclosure grows a gallium nitride high electron mobility transistor (GaN HEMT) layer on a rigid silicon carbide (SiC) substrate to avoid lattice mismatch between a silicon (Si) substrate and gallium nitride (GaN), improving performance of the flexible microwave power transistor. Moreover, in view of problems such as low output power, power added efficiency and power gain with the existing device preparation method, the present disclosure retains part of the rigid SiC substrate and grows a flexible substrates at room temperature to prepare a high-quality device. The present disclosure has greatly improved power output capability, efficiency and gain, and basically unchanged performance of device under 0.75% of stress.

Abstract: An ultra-wideband power amplifier includes a preamplifier circuit and a post amplifier circuit. The preamplifier circuit includes a first DC blocking capacitor C1, a first decoupling capacitor C2, a second decoupling capacitor C3, a stabilizing resistor Rin, a first AC blocking resistor RG1, a first input inductor L1, a second input inductor L2, an output inductor L3, a first input microstrip line MLIN1, a second input microstrip line MLIN2, an output microstrip line MLIN3, and a first transistor Q1. A first end of the first DC blocking capacitor C1 acts as an input terminal of the preamplifier circuit, and a second end of the first DC blocking capacitor C1 is connected to the stabilizing resistor Rin, the first input inductor L1, the first input microstrip line MLIN1, and a gate electrode of the first transistor Q1 sequentially. One end of the first decoupling capacitor C2 is grounded.

Abstract: The present disclosure provides a flexible microwave power transistor and a preparation method thereof. In view of great lattice mismatch and poor performance of a device prepared with a Si substrate in an existing preparation method, the preparation method of the present disclosure grows a gallium nitride high electron mobility transistor (GaN HEMT) layer on a rigid silicon carbide (SiC) substrate to avoid lattice mismatch between a silicon (Si) substrate and gallium nitride (GaN), improving performance of the flexible microwave power transistor. Moreover, in view of problems such as low output power, power added efficiency and power gain with the existing device preparation method, the present disclosure retains part of the rigid SiC substrate and grows a flexible substrates at room temperature to prepare a high-quality device. The present disclosure has greatly improved power output capability, efficiency and gain, and basically unchanged performance of device under 0.75% of stress.

Abstract: A parameter extraction method for quasi-physical large-signal model for microwave gallium nitride high-electron-mobility transistors (GaN HEMTs). The method includes: 1) acquiring a data set of parameters for a large-signal model for a plurality of different microwave transistors GaN HEMTs having the same size; 2) performing statistical analysis of physical parameters of the large-signal model and sub-models thereof: 3) characterizing the correlation between the physical parameters by factor analysis; and 4) predicting the output characteristics of the GaN HEMTs.

Abstract: A yield load pull system-based integrated circuit design method and a system thereof are provided. The method includes: setting a yield-related threshold; setting a source impedance; configuring a sweep range of a Smith chart; determining load impedance points within the sweep range of the Smith chart; acquiring impedance information; determining output characteristics of a plurality of sample devices at each load impedance point of the determined load impedance points, based on the source impedance and the impedance information corresponding to each load impedance point, by invoking a harmonic balance simulator embedded in an Advanced Design System, where the output characteristics comprise: a large-signal gain, an output power and a power-added efficiency; determining a device yield for each load impedance point; for each output characteristic calculating a mean value across the plurality of sample devices, at each load impedance point; and determining a best load impedance; conducting IC design.

Abstract: A differential amplifier includes a pre-driver stage, an input balun, a matching network, a differential transistor pair, a bias network and an output balun. An output terminal of the pre-driver stage is connected to an input terminal of the input balun. An output terminal of the input balun is connected to the matching network. An output terminal of the matching network is connected to an input terminal of the differential transistor pair and to the bias network. An output terminal of the differential transistor pair is connected to the output balun. A single-turn laminated transformer is used as the input balun of the present invention, and the output balun is of a structure having an inner full frame and an outer half frame, thereby making the differential amplifier have small occupation area, low loss, high operating frequency and high power amplification efficiency.

Abstract: A statistical analysis method for technological parameters of GaN devices based on equivalent circuit model is provided. The analysis method includes the following steps: establishing a GaN device small-signal equivalent circuit model, and extracting small-signal model parameters; establishing a GaN device large-signal equivalent circuit model, and extracting large-signal model parameters; tuning and optimizing the large-signal model parameters by targeting the measured microwave characteristics of the device; and extracting technological parameters of GaN devices in multiple batches based on the established large-signal model, and statistically analyzing the technological parameters.

Abstract: A differential amplifier includes a pre-driver stage, an input balun, a matching network, a differential transistor pair, a bias network and an output balun. An output terminal of the pre-driver stage is connected to an input terminal of the input balun. An output terminal of the input balun is connected to the matching network. An output terminal of the matching network is connected to an input terminal of the differential transistor pair and to the bias network. An output terminal of the differential transistor pair is connected to the output balun. A single-turn laminated transformer is used as the input balun of the present invention, and the output balun is of a structure having an inner full frame and an outer half frame, thereby making the differential amplifier have small occupation area, low loss, high operating frequency and high power amplification efficiency.