Patents by Inventor Yuehua Jia
Yuehua Jia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240105880Abstract: A light-emitting diode and a display device are provided. The light-emitting diode includes an epitaxial structure, and the epitaxial structure has a light-emitting surface and a rear surface opposite to the light-emitting surface. The light-emitting surface includes a peripheral region and a middle region surrounded by the peripheral region, the peripheral region is covered with an insulating layer, and the area of the middle region accounts for 60% to 99% of the area of the light-emitting surface. The width of the insulating layer on the light-emitting surface is between 5 ?m and 20 ?m, so that it is possible to ensure a sufficient light output rate of the light-emitting diode, and the thickness of the insulating layer may be properly increased as well to enhance the protection for the sidewall of the light-emitting diode and prevent IR current leakage from affecting the performance of the device.Type: ApplicationFiled: September 7, 2023Publication date: March 28, 2024Applicant: Tianjin Sanan Optoelectronics Co., Ltd.Inventors: Yuehua JIA, Weifan KE, Rongyan GUO, Huanshao KUO, Yuren PENG, Duxiang WANG
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Patent number: 11942568Abstract: A light-emitting diode device includes an epitaxial structure that contains first-type and second-type semiconductor units and an active layer interposed therebetween, a light transmittable dielectric element that is disposed on the first-type semiconductor unit opposite to the active layer and is formed with a first through hole, an adhesive layer that is disposed on the dielectric element and is formed with a second through hole corresponding in position to the first through hole, and a metal contact element that is disposed on the adhesive layer. The adhesive layer has a thickness of at most one fifth of that of the dielectric element. The metal contact element extends into the first and second through holes, and electrically contacts the first-type semiconductor unit. A method for manufacturing the LED device is also disclosed.Type: GrantFiled: June 15, 2020Date of Patent: March 26, 2024Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.Inventors: Dongyan Zhang, Yuehua Jia, Cheng Meng, Jing Wang, Chun-I Wu, Duxiang Wang
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Publication number: 20230402572Abstract: A light-emitting device includes: a semiconductor epitaxial stack that has a first surface and a second surface, and includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on one another in a direction from the second surface to the first surface; a light-transmissive dielectric layer that is disposed on the second surface and that has through holes; an ohmic contact layer that is formed in the through holes and that is in contact with the first semiconductor layer; an adhesion layer that is disposed on the light-transmissive dielectric layer opposite to the semiconductor epitaxial stack; a metal reflection layer that is disposed on the adhesion layer opposite to the semiconductor epitaxial stack; and a diffusion barrier layer that is disposed between the ohmic contact layer and the adhesion layer. A light-emitting apparatus and a method for manufacturing the light-emitting device are also provided.Type: ApplicationFiled: August 25, 2023Publication date: December 14, 2023Inventors: Yuehua JIA, Yu-Ren PENG, Duxiang WANG
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Publication number: 20230092504Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.Type: ApplicationFiled: October 31, 2022Publication date: March 23, 2023Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Cheng MENG, Yuehua JIA, Jing WANG, Chun-Yi WU, Ching-Shan TAO, Duxiang WANG
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Publication number: 20230080272Abstract: A light-emitting device includes a first type semiconductor layer, an active layer, a second type semiconductor layer disposed adjacent to the active layer and opposite the first type semiconductor layer, and including a current spreading layer that has a recess, an insulation layer filling the recess and protruding from a surface of the current spreading layer that faces in a direction away from the active layer, and a contact layer disposed on the surface of the current spreading layer which lacks said insulation layer. A sum of a depth of the recess and a thickness of the contact layer is not less than a thickness of the insulation layer. A method for producing the light-emitting device is also disclosed.Type: ApplicationFiled: September 7, 2022Publication date: March 16, 2023Inventors: YUEHUA JIA, WEIFAN KE, HUANSHAO KUO, YU-REN PENG, DUXIANG WANG
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Patent number: 11522107Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second, opposing, surface, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; a metal reflective layer disposed over the second surface; and a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer.Type: GrantFiled: June 1, 2020Date of Patent: December 6, 2022Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Cheng Meng, Yuehua Jia, Jing Wang, Chun-Yi Wu, Ching-Shan Tao, Duxiang Wang
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Publication number: 20220077370Abstract: A light-emitting component includes a light-emitting unit and an electrically insulating layer. The light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer, which are stacked on one another along a stacking direction in such order. The second semiconductor has a lower surface distal from the active layer. The electrically insulating layer is disposed to cover a first portion and to expose a second portion of the lower surface of the second semiconductor layer. A fluorine-containing region is formed in the second semiconductor layer. Methods for making the light-emitting component are also disclosed.Type: ApplicationFiled: November 15, 2021Publication date: March 10, 2022Inventors: Dongyan ZHANG, Yuehua JIA, Chun-Yi WU, Wen LIU, Jing WANG, Huan-Shao KUO, Huiwen LI, Duxiang WANG
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Publication number: 20210043798Abstract: A light-emitting diode device includes an epitaxial structure that contains first-type and second-type semiconductor units and an active layer interposed therebetween, a light transmittable dielectric element that is disposed on the first-type semiconductor unit opposite to the active layer and is formed with a first through hole, an adhesive layer that is disposed on the dielectric element and is formed with a second through hole corresponding in position to the first through hole, and a metal contact element that is disposed on the adhesive layer. The adhesive layer has a thickness of at most one fifth of that of the dielectric element. The metal contact element extends into the first and second through holes, and electrically contacts the first-type semiconductor unit. A method for manufacturing the LED device is also disclosed.Type: ApplicationFiled: June 15, 2020Publication date: February 11, 2021Inventors: DONGYAN ZHANG, YUEHUA JIA, CHENG MENG, JING WANG, CHUN-I WU, DUXIANG WANG
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Publication number: 20200295231Abstract: A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second, opposing, surface, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; a metal reflective layer disposed over the second surface; and a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer.Type: ApplicationFiled: June 1, 2020Publication date: September 17, 2020Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Cheng MENG, Yuehua JIA, Jing WANG, Chun-Yi WU, Ching-Shan TAO, Duxiang WANG
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Patent number: 10707381Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer having a first surface and a second, opposing, surface, including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an omnidirectional reflector structure formed on the second surface of the light-emitting epitaxial laminated layer, including a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer and having conductive holes therein; a first transparent adhesive layer on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; a second transparent adhesive layer on one side surface of the first transparent adhesive layer that is distal from the transparent dielectric layer; and a metal reflective layer on one side surface of the second transparent adhesive layer that is distal from the first transparent adhesive layer.Type: GrantFiled: July 25, 2019Date of Patent: July 7, 2020Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Cheng Meng, Yuehua Jia, Jing Wang, Chun-Yi Wu, Ching-Shan Tao, Duxiang Wang
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Publication number: 20190348572Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer having a first surface and a second, opposing, surface, including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an omnidirectional reflector structure formed on the second surface of the light-emitting epitaxial laminated layer, including a transparent dielectric layer located on the second surface of the light-emitting epitaxial laminated layer and having conductive holes therein; a first transparent adhesive layer on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; a second transparent adhesive layer on one side surface of the first transparent adhesive layer that is distal from the transparent dielectric layer; and a metal reflective layer on one side surface of the second transparent adhesive layer that is distal from the first transparent adhesive layer.Type: ApplicationFiled: July 25, 2019Publication date: November 14, 2019Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Cheng MENG, Yuehua JIA, Jing WANG, Chun-Yi WU, Ching-Shan TAO, Duxiang WANG
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Patent number: 10411163Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer and an omnidirectional reflector structure. The light-emitting epitaxial laminated layer has a first surface and an opposing second surface, including an n-type semi-conductive layer, a light emitting layer and a p-type semiconductor layer.Type: GrantFiled: August 10, 2018Date of Patent: September 10, 2019Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Cheng Meng, Yuehua Jia, Jing Wang, Chun-Yi Wu, Ching-Shan Tao, Duxiang Wang
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Patent number: 10249773Abstract: A light-emitting diode chip includes a first semiconductor layer, a second semiconductor layer and an active layer between them; an dielectric layer having a conductive through-hole array over the lower surface of the light-emitting epitaxial laminated layer; a metal conductive layer over the lower surface of the dielectric layer, which fills up the conductive through-hole, and forms ohmic contact with the light-emitting epitaxial laminated layer; a conductive substrate over the lower surface of the metal conductive layer for supporting the light-emitting epitaxial laminated layer; a first electrode comprising a bonding pad electrode and a finger-shape electrode over the upper surface of the light-emitting epitaxial laminated layer, wherein, a rotation angle is formed between the conductive through-hole array and the finger-shape electrode, which is selected to prevent a preferred number of conductive through-holes from being shielded by the bonding pad electrode and the finger-shape electrode.Type: GrantFiled: December 22, 2017Date of Patent: April 2, 2019Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Yuehua Jia, Chun-Yi Wu, Ching-Shan Tao
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Publication number: 20180351045Abstract: A light-emitting diode includes a light-emitting epitaxial laminated layer and an omnidirectional reflector structure. The light-emitting epitaxial laminated layer has a first surface and an opposing second surface, including an n-type semi-conductive layer, a light emitting layer and a p-type semiconductor layer.Type: ApplicationFiled: August 10, 2018Publication date: December 6, 2018Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Cheng MENG, Yuehua JIA, Jing WANG, Chun-Yi WU, Ching-Shan TAO, Duxiang WANG
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Publication number: 20180122992Abstract: A light-emitting diode chip includes a first semiconductor layer, a second semiconductor layer and an active layer between them; an dielectric layer having a conductive through-hole array over the lower surface of the light-emitting epitaxial laminated layer; a metal conductive layer over the lower surface of the dielectric layer, which fills up the conductive through-hole, and forms ohmic contact with the light-emitting epitaxial laminated layer; a conductive substrate over the lower surface of the metal conductive layer for supporting the light-emitting epitaxial laminated layer; a first electrode comprising a bonding pad electrode and a finger-shape electrode over the upper surface of the light-emitting epitaxial laminated layer, wherein, a rotation angle is formed between the conductive through-hole array and the finger-shape electrode, which is selected to prevent a preferred number of conductive through-holes from being shielded by the bonding pad electrode and the finger-shape electrode.Type: ApplicationFiled: December 22, 2017Publication date: May 3, 2018Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Yuehua JIA, Chun-Yi WU, Ching-Shan TAO
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Patent number: 9703662Abstract: The present disclosure relates to a method for controlling a plug-in by a router and the router thereof. The method includes: receiving a plug-in state request querying an operational state of a plug-in sent from a terminal device; obtaining the operational state of the plug-in according to the plug-in state request; and sending the operational state of the plug-in to the terminal device.Type: GrantFiled: July 17, 2015Date of Patent: July 11, 2017Assignee: XIAOMI INC.Inventors: Tiejun Liu, Zheng Li, Liang Cheng, Yuehua Jia
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Publication number: 20160048439Abstract: The present disclosure relates to a method for controlling a plug-in by a router and the router thereof. The method includes: receiving a plug-in state request querying an operational state of a plug-in sent from a terminal device; obtaining the operational state of the plug-in according to the plug-in state request; and sending the operational state of the plug-in to the terminal device.Type: ApplicationFiled: July 17, 2015Publication date: February 18, 2016Inventors: Tiejun Liu, Zheng Li, Liang Cheng, Yuehua Jia