Abstract: The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.

Abstract: The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.

Abstract: Methods of forming a multilayer circuit comprising: a) forming a patterned array of vias in a plurality of layers of green tape; b) filling the vias in one or more of the green tape layers from (a); c) printing over at least one surface of the green tape layers from step (b) with at least one patterned layer of a thick film composition consisting essentially of: i) electrically conductive powder; ii) an inorganic binder wherein the inorganic binder is selected from TiO2 and any compounds that can generate TiO2 during firing and any one of the following compounds: Sb2O3, Co3O4, PbO, Fe2O3, SnO2, MnO, CuO and mixtures thereof; and iii) an organic medium, ?wherein the total inorganic binder is in the range of 0.6 wt. % to about 2 wt. % of the total composition. d) laminating the printed green tape layers from step (d) to form an assemblage comprising a plurality of unfired interconnected functional layers separated by unfired green tape; and e) cofiring the assemblage from step (d).

Abstract: Embodiments of the invention relate to a silicon semiconductor device, and a conductive paste for use in the front side of a solar cell device.

Abstract: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

Abstract: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (c) fluorine-containing glass frit; dispersed in (d) organic vehicle and devices made therefrom.

Abstract: The present invention is directed to an electroconductive thick film composition comprising: (a) electroconductive metal particles selected from (1) Al, Cu, Au, Ag, Pd and Pt; (2) alloy of Al, Cu, Au, Ag, Pd and Pt; and (3) mixtures thereof; (3) glass frit wherein said glass frit is Pb-free; dispersed in (d) an organic medium, and wherein the average diameter of said electroconductive metal particles is in the range of 0.5-10.0 ?m. The present invention is further directed to an electrode formed from the composition as detailed above and a semiconductor device(s) (for example, a solar cell) comprising said electrode.

Abstract: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Mn-containing additive; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

Abstract: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

Abstract: Methods of forming a multilayer circuit comprising: a) forming a patterned array of vias in a plurality of layers of green tape; b) filling the vias in one or more of the green tape layers from (a); c) printing over at least one surface of the green tape layers from step (b) with at least one patterned layer of a thick film composition consisting essentially of: i) electrically conductive powder; ii) an inorganic binder wherein the inorganic binder is selected from TiO2 and any compounds that can generate TiO2 during firing and any one of the following compounds: Sb2O3, Co3O4, PbO, Fe2O3, SnO2, MnO, CuO and mixtures thereof; and iii) an organic medium, ?wherein the total inorganic binder is in the range of 0.6 wt. % to about 2 wt. % of the total composition. d) laminating the printed green tape layers from step (d) to form an assemblage comprising a plurality of unfired interconnected functional layers separated by unfired green tape; and e) cofiring the assemblage from step (d).

Abstract: A thick film composition consisting essentially of: a) electrically conductive powder; b) an inorganic binder wherein the inorganic binder is selected from TiO2 and any compounds that can generate TiO2 during firing and any one of the following compounds: Sb2O3, CO3O4, PbO, Fe2O3, SnO2, ZrO2, MnO, CuOx and mixtures thereof; and c) an organic medium.

Abstract: A thick film composition consisting essentially of: a) electrically conductive powder; b) an inorganic binder wherein the inorganic binder is selected from TiO2 and any compounds that can generate TiO2 during firing; and c) an organic medium.

Abstract: The present invention is directed to an electroconductive thick film composition comprising: (a) electroconductive metal particles selected from (1) Al, Cu, Au, Ag, Pd and Pt; (2) alloy of Al, Cu, Au, Ag, Pd and Pt; and (3) mixtures thereof; (3) glass frit wherein said glass frit is Pb-free; dispersed in (d) an organic medium, and wherein the average diameter of said electroconductive metal particles is in the range of 0.5-10.0 ?m. The present invention is further directed to an electrode formed from the composition as detailed above and a semiconductor device(s) (for example, a solar cell) comprising said electrode.

Abstract: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Mn-containing additive; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

Abstract: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

Abstract: A thick film composition consisting essentially of: a) electrically conductive powder; b) an inorganic binder wherein the inorganic binder is selected from TiO2 and any compounds that can generate TiO2 during firing and any one of the following compounds: Sb2O3, CO3O4, PbO, Fe2O3, SnO2, ZrO2, MnO, CuOx and mixtures thereof; and c) an organic medium.

Abstract: A thick film composition consisting essentially of: a) electrically conductive powder; b) an inorganic binder wherein the inorganic binder is selected from TiO2 and any compounds that can generate TiO2 during firing; and c) an organic medium.

Abstract: The invention is directed to a conductive thick film composition for use on an aluminum nitride substrate that utilizes a boron containing reactant and a metal oxide to promote adhesion.

Abstract: Olefins containing selected functional groups such as silyl, ether and alkenyl, and often containing a blocking group, may be copolymerized with unsubstituted olefins such as ethylene and propylene in the presence of certain coordination compounds of nickel or palladium. The resulting polymers are useful as molding resins, elastomers, in adhesives and for films.

Abstract: Olefins containing selected functional groups such as silyl, ether and alkenyl, and often containing a blocking group, may be copolymerized with unsubstituted olefins such as ethylene and propylene in the presence of certain coordination compounds of nickel or palladium. The resulting polymers are useful as molding resins, elastomers, in adhesives and for films.