Patents by Inventor Yueli Y. Wang

Yueli Y. Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacture of semiconductor device and conductive compositions used therein
    Patent number: 8313673
    Abstract: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Mn-containing additive; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.
    Type: Grant
    Filed: October 23, 2008
    Date of Patent: November 20, 2012
    Assignee: E I du Pont de Nemours and Company
    Inventors: Yueli Y. Wang, Alan Frederrick Carroll, Kenneth Warren Hang, Richard John Sheffield Young
  • Method of Manufacture of Semiconductor Device and Conductive Compositions Used Therein
    Publication number: 20090044858
    Abstract: The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Mn-containing additive; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.
    Type: Application
    Filed: October 23, 2008
    Publication date: February 19, 2009
    Inventors: Yueli Y. WANG, Alan Frederrick Carroll, Kenneth Warren Hang, Richard John Sheffield Young